Abstract: A planarization processing device for polishing a substrate, e.g., a semiconductor wafer, includes two planarization processing sections (SP1, SP2) that each include a holder (62) for holding a workpiece (W), a drive motor (71) that rotates the holder (62), a support plate (4) holds a pad (5), a linear guide (3) that guides reciprocal movement of the support plate (4) in a direction parallel to the surface of the pad (5), and a drive cylinder (72) that advances the holder (62) or the support plate (4) in a direction that intersects the surface of the workpiece W or the pad (5) to cause the opposing surfaces of the workpiece and the pad (5) to be at least proximal to each other. A primary driver (PD) causes the support plates (4) of the planarization processing sections (SP1, SP2) to reciprocate along the same straight line in opposite phases.

Abstract: A method for planarizing a workpiece includes bringing a surface of the workpiece and a surface of a pad having a catalyst layer at least on the surface thereof into contact with or proximal to each other, rotating a first one of the workpiece and the pad in a plane of the surface of the first one around a central axis that intersects the surface of the first one while supplying a liquid that supports a catalytic reaction between the surface of the workpiece and the catalyst layer on the surface of the pad, and simultaneously reciprocally moving a second one of the workpiece and the pad in a direction parallel to the surface of the second one by at least an amount that makes possible planarization of the surface of the workpiece based on the catalytic reaction.

Abstract: A method for planarizing a workpiece includes bringing a surface of the workpiece and a surface of a pad having a catalyst layer at least on the surface thereof into contact with or proximal to each other, rotating a first one of the workpiece and the pad in a plane of the surface of the first one around a central axis that intersects the surface of the first one while supplying a liquid that supports a catalytic reaction between the surface of the workpiece and the catalyst layer on the surface of the pad, and simultaneously reciprocally moving a second one of the workpiece and the pad in a direction parallel to the surface of the second one by at least an amount that makes possible planarization of the surface of the workpiece based on the catalytic reaction.

Abstract: A planarization processing device for polishing a substrate, such as a semiconductor wafer, includes a drive motor that rotates the substrate about a rotational axis. A support plate holds a pad for polishing the substrate such that the surface of the pad faces the surface of the substrate. The surface of the pad contains a catalyst, e.g., composed of a transition metal compound. A liquid that supports a catalytic reaction for polishing the substrate is supplied between the surfaces of the substrate and the pad. A reciprocating drive device causes the support plate to undergo reciprocating motion in a direction parallel to the surface of the pad by at least an amount that makes possible planarization of the substrate based on the catalytic reaction.

Abstract: A planarization processing device for polishing a substrate, e.g., a semiconductor wafer, includes two planarization processing sections (SP1, SP2) that each include a holder (62) for holding a workpiece (W), a drive motor (71) that rotates the holder (62), a support plate (4) holds a pad (5), a linear guide (3) that guides reciprocal movement of the support plate (4) in a direction parallel to the surface of the pad (5), and a drive cylinder (72) that advances the holder (62) or the support plate (4) in a direction that intersects the surface of the workpiece W or the pad (5) to cause the opposing surfaces of the workpiece and the pad (5) to be at least proximal to each other. A primary driver (PD) causes the support plates (4) of the planarization processing sections (SP1, SP2) to reciprocate along the same straight line in opposite phases.

Abstract: A planarization processing device for polishing a substrate, such as a semiconductor wafer, includes a drive motor that rotates the substrate about a rotational axis. A support plate holds a pad for polishing the substrate such that the surface of the pad faces the surface of the substrate. The surface of the pad contains a catalyst, e.g., composed of a transition metal compound. A liquid that supports a catalytic reaction for polishing the substrate is supplied between the surfaces of the substrate and the pad. A reciprocating drive device causes the support plate to undergo reciprocating motion in a direction parallel to the surface of the pad by at least an amount that makes possible planarization of the substrate based on the catalytic reaction.

Abstract: A substrate polishing apparatus includes a retainer for holding a substrate and substrate rotating device that spins the retainer around a first rotational axis perpendicular to a to-be-polished surface of the substrate. A platen includes an abrasive pad disposed opposite of the to-be-polished surface of the substrate. A platen rotating device spins the platen around a second rotational axis perpendicular to the abrasive pad. A liquid storage chamber includes a wall portion surrounding the outer periphery of the substrate. One end of the wall portion is positionable in a liquid-tight manner with the abrasive pad to define a liquid storage space for retaining a polishing liquid around the outer periphery of the substrate.

Abstract: A polishing pad auxiliary plate including: a lower auxiliary plate overlapping a top surface of a rotating surface plate of a polishing device; a first adhering member adhering the lower auxiliary plate to the rotating surface plate; an upper auxiliary plate with a pad support surface on which the polishing pad is overlapped and adhered, while overlapping a top surface of the lower auxiliary plate; a second adhering member adhering the upper auxiliary plate to the lower auxiliary plate; and an alignment member for mutually aligning the lower and upper auxiliary plates and matching center axes thereof. By removing the upper auxiliary plate from the lower auxiliary plate, the polishing pad is removed from the rotating surface plate while being adhered to the pad support surface of the upper auxiliary plate, and the removed upper auxiliary plate is reattached and aligned to the lower auxiliary plate by the alignment member.

Abstract: A method of regenerating a polishing pad for polishing semiconductor wafers is described wherein the polishing pad is removably stacked, aligned and fixed by a fitting ring to a polishing pad supporting surface of a polishing pad sub plate mounted on a central surface of a sub plate main body on an upper surface of a polisher rotation table and wherein the regeneration may include dressing, as well as cleaning, or regrooving the polishing pad surface.

Abstract: A construction of a polishing pad sub plate that is able, while maintaining the fixing strength of the polishing pad to the rotation table, to make possible the easy removal of the polishing pad from the rotation table, and in particular, by preventing injury to the polishing pad when peeling it from the rotation table is offered.

Abstract: A substrate polishing apparatus includes a retainer for holding a substrate and substrate rotating device that spins the retainer around a first rotational axis perpendicular to a to-be-polished surface of the substrate. A platen includes an abrasive pad disposed opposite of the to-be-polished surface of the substrate. A platen rotating device spins the platen around a second rotational axis perpendicular to the abrasive pad. A liquid storage chamber includes a wall portion surrounding the outer periphery of the substrate. One end of the wall portion is positionable in a liquid-tight manner with the abrasive pad to define a liquid storage space for retaining a polishing liquid around the outer periphery of the substrate.

Abstract: A polishing pad auxiliary plate including: a lower auxiliary plate overlapping a top surface of a rotating surface plate of a polishing device; a first adhering member adhering the lower auxiliary plate to the rotating surface plate; an upper auxiliary plate with a pad support surface on which the polishing pad is overlapped and adhered, while overlapping a top surface of the lower auxiliary plate; a second adhering member adhering the upper auxiliary plate to the lower auxiliary plate; and an alignment member for mutually aligning the lower and upper auxiliary plates and matching center axes thereof. By removing the upper auxiliary plate from the lower auxiliary plate, the polishing pad is removed from the rotating surface plate while being adhered to the pad support surface of the upper auxiliary plate, and the removed upper auxiliary plate is reattached and aligned to the lower auxiliary plate by the alignment member.

Abstract: A method for use of a polishing pad sub plate that is able, while maintaining the fixing strength of the polishing pad to the rotation table, to make possible the easy removal of the polishing pad from the rotation table, and in particular, by preventing injury to the polishing pad when peeling it from the rotation table is offered, makes possible the convenient, effective and practical regeneration of polishing pads using a reforming tool.

Abstract: A construction of a polishing pad sub plate that is able, while maintaining the fixing strength of the polishing pad to the rotation table, to make possible the easy removal of the polishing pad from the rotation table, and in particular, by preventing injury to the polishing pad when peeling it from the rotation table is offered.

Abstract: A polishing pad having a novel structure, which is applicable to highly accurate various polishing process, such as a CMP process, is provided. An annular rear plane groove (22) extending in a circumferential direction is formed on a rear plane (20) of the polishing pad.

Abstract: A method of manufacturing a grooved polishing pad wherein a large number of grooves, extending parallel to each other, are fabricated at specific intervals on at least one of a front surface and a back surface of a polishing pad substrate through a groove cutting process on the polishing pad substrate which is made from a synthetic resin material, the method comprising the steps of: cutting, by using a multi-edged tool having a plurality of pad groove machining cutting parts, arrayed at equal spacing p with the spacing p being an integer multiple no less than 2 of a desired spacing d of the grooves, a plurality of the grooves; and repeating the cutting of the plurality of grooves through shifting the multi-edged tool in a direction in which the pad groove machining cutting parts are arrayed, in order to fabricate the large number of grooves, extending parallel to each other, with the desired spacing d.

Abstract: A polishing pad having a novel structure, which is applicable to highly accurate various polishing process, such as a CMP process, is provided. An annular rear plane groove (22) extending in a circumferential direction is formed on a rear plane (20) of the polishing pad.

Abstract: It is provided a polishing pad of novel construction capable of controlling actively and efficiently a slurry flow during polishing a surface of a semiconductor substrate, such as a wafer, thus making it possible to precisely and stably performing a desired polishing process. Onto a surface of a pad substrate 12 of synthetic resin material, formed is a groove 16 extending approximately circumferentially. An inner circumferential wall surface 20 and an outer circumferential wall surface 22 are made parallel to each other and slant with respect to a center axis 18 of the pad substrate 12.

Abstract: Disclosed is a turning tool for cutting circumferential grooves into a surface of a polishing pad formed of a resin material and utilized for polishing semiconductor devices. The turning tool comprising a cutting part arranged to have a tooth width within a range of 0.005–1.0 mm, a wedge angle within a range of 15–35 degrees, and a front clearance angle within a range of 65–45 degrees. A polishing pad effectively formed by using the turning tool, and an apparatus and a method of producing such a polishing pad by utilizing the turning tool are also disclosed.

Abstract: It is provided a polishing pad of novel construction capable of controlling actively and efficiently a slurry flow during polishing a surface of a semiconductor substrate, such as a wafer, thus making it possible to precisely and stably performing a desired polishing process. Onto a surface of a pad substrate 12 of synthetic resin material, formed is a groove 16 extending approximately circumferentially. An inner circumferential wall surface 20 and an outer circumferential wall surface 22 are made parallel to each other and slant with respect to a center axis 18 of the pad substrate 12.