Patents by Inventor Tatsuya Bando
Tatsuya Bando has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10192594Abstract: A semiconductor device includes a voltage hold circuit that raises a second boosted voltage with rise of an output voltage of a booster circuit that generates a first boosted voltage and then maintains the second boosted voltage at a point when the output voltage reaches a hold voltage level after that, and a first switch that short-circuits a first output terminal through which the first boosted voltage is output and a second output terminal through which the second boosted voltage is output until the output voltage reaches the hold voltage level.Type: GrantFiled: February 17, 2017Date of Patent: January 29, 2019Assignee: Renesas Electronics CorporationInventors: Masao Yamashiro, Tatsuya Bando, Kunitoshi Kamada, Hiroshi Sato
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Publication number: 20170162239Abstract: A semiconductor device includes a voltage hold circuit that raises a second boosted voltage with rise of an output voltage of a booster circuit that generates a first boosted voltage and then maintains the second boosted voltage at a point when the output voltage reaches a hold voltage level after that, and a first switch that short-circuits a first output terminal through which the first boosted voltage is output and a second output terminal through which the second boosted voltage is output until the output voltage reaches the hold voltage level.Type: ApplicationFiled: February 17, 2017Publication date: June 8, 2017Applicant: Renesas Electronics CorporationInventors: Masao YAMASHIRO, Tatsuya BANDO, Kunitoshi KAMADA, Hiroshi SATO
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Patent number: 9614439Abstract: A semiconductor device includes a voltage hold circuit that raises a second boosted voltage with rise of an output voltage of a booster circuit that generates a first boosted voltage and then maintains the second boosted voltage at a point when the output voltage reaches a hold voltage level after that, and a first switch that short-circuits a first output terminal through which the first boosted voltage is output and a second output terminal through which the second boosted voltage is output until the output voltage reaches the hold voltage level.Type: GrantFiled: October 21, 2015Date of Patent: April 4, 2017Assignee: Renesas Electronics CorporationInventors: Masao Yamashiro, Tatsuya Bando, Kunitoshi Kamada, Hiroshi Sato
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Publication number: 20160043639Abstract: A semiconductor device includes a voltage hold circuit that raises a second boosted voltage with rise of an output voltage of a booster circuit that generates a first boosted voltage and then maintains the second boosted voltage at a point when the output voltage reaches a hold voltage level after that, and a first switch that short-circuits a first output terminal through which the first boosted voltage is output and a second output terminal through which the second boosted voltage is output until the output voltage reaches the hold voltage level.Type: ApplicationFiled: October 21, 2015Publication date: February 11, 2016Applicant: RENESAS ELECTRONICS CORPORATIONInventors: Masao YAMASHIRO, Tatsuya BANDO, Kunitoshi KAMADA, Hiroshi SATO
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Patent number: 9201439Abstract: A semiconductor device includes a voltage hold circuit that raises a second boosted voltage with rise of an output voltage of a booster circuit that generates a first boosted voltage and then maintains the second boosted voltage at a point when the output voltage reaches a hold voltage level after that, and a first switch that short-circuits a first output terminal through which the first boosted voltage is output and a second output terminal through which the second boosted voltage is output until the output voltage reaches the hold voltage level.Type: GrantFiled: January 28, 2013Date of Patent: December 1, 2015Assignee: Renesas Electronics CorporationInventors: Masao Yamashiro, Tatsuya Bando, Kunitoshi Kamada, Hiroshi Sato
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Publication number: 20130241515Abstract: A semiconductor device includes a voltage hold circuit that raises a second boosted voltage with rise of an output voltage of a booster circuit that generates a first boosted voltage and then maintains the second boosted voltage at a point when the output voltage reaches a hold voltage level after that, and a first switch that short-circuits a first output terminal through which the first boosted voltage is output and a second output terminal through which the second boosted voltage is output until the output voltage reaches the hold voltage level.Type: ApplicationFiled: January 28, 2013Publication date: September 19, 2013Applicant: RENESAS ELECTRONICS CORPORATIONInventors: Masao YAMASHIRO, Tatsuya BANDO, Kunitoshi KAMADA, Hiroshi SATO
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Patent number: 7072224Abstract: The number of rewrites for memory cells is to be increased, and the reliability of data reading to be substantially improved. Where data in memory cells are to be erased, the switching of an erase voltage to be applied to the control gate of each memory cell, while switching from one to another of voltages of any different levels, as the control gate voltage (=soft erase voltage) is accomplished according to the quantity of electric charges accumulated at the floating gate of each memory cell so as to keep substantially constant the voltage applied to the tunnel film of the memory cell. Upon acceptance of an erase command, a CPU supplies a control signal to a decoder, and on the basis of the resultant decode signal an erase voltage switching circuit generates a soft erase voltage of a certain level. After that, while switching from one to another of soft erase voltages differing in level, data in the memory cell are erased. Upon completion of erasing data in the memory cell, erase verification is carried out.Type: GrantFiled: November 23, 2005Date of Patent: July 4, 2006Assignee: Renesas Technology Corp.Inventors: Yoshinori Sakamoto, Tatsuya Bando
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Patent number: 7068541Abstract: The number of rewrites for memory cells is to be increased, and the reliability of data reading to be substantially improved. Where data in memory cells are to be erased, the switching of an erase voltage to be applied to the control gate of each memory cell, while switching from one to another of voltages of any different levels, as the control gate voltage (=soft erase voltage) is accomplished according to the quantity of electric charges accumulated at the floating gate of each memory cell so as to keep substantially constant the voltage applied to the tunnel film of the memory cell. Upon acceptance of an erase command, a CPU supplies a control signal to a decoder, and on the basis of the resultant decode signal an erase voltage switching circuit generates a soft erase voltage of a certain level. After that, while switching from one to another of soft erase voltages differing in level, data in the memory cell are erased. Upon completion of erasing data in the memory cell, erase verification is carried out.Type: GrantFiled: November 5, 2003Date of Patent: June 27, 2006Assignee: Renesas Technology Corp.Inventors: Yoshinori Sakamoto, Tatsuya Bando
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Publication number: 20060077718Abstract: The number of rewrites for memory cells is to be increased, and the reliability of data reading to be substantially improved. Where data in memory cells are to be erased, the switching of an erase voltage to be applied to the control gate of each memory cell, while switching from one to another of voltages of any different levels, as the control gate voltage (=soft erase voltage) is accomplished according to the quantity of electric charges accumulated at the floating gate of each memory cell so as to keep substantially constant the voltage applied to the tunnel film of the memory cell. Upon acceptance of an erase command, a CPU supplies a control signal to a decoder, and on the basis of the resultant decode signal an erase voltage switching circuit generates a soft erase voltage of a certain level. After that, while switching from one to another of soft erase voltages differing in level, data in the memory cell are erased. Upon completion of erasing data in the memory cell, erase verification is carried out.Type: ApplicationFiled: November 23, 2005Publication date: April 13, 2006Inventors: Yoshinori Sakamoto, Tatsuya Bando
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Publication number: 20040095809Abstract: The number of rewrites for memory cells is to be increased, and the reliability of data reading to be substantially improved. Where data in memory cells are to be erased, the switching of an erase voltage to be applied to the control gate of each memory cell, while switching from one to another of voltages of any different levels, as the control gate voltage (=soft erase voltage) is accomplished according to the quantity of electric charges accumulated at the floating gate of each memory cell so as to keep substantially constant the voltage applied to the tunnel film of the memory cell. Upon acceptance of an erase command, a CPU supplies a control signal to a decoder, and on the basis of the resultant decode signal an erase voltage switching circuit generates a soft erase voltage of a certain level. After that, while switching from one to another of soft erase voltages differing in level, data in the memory cell are erased.Type: ApplicationFiled: November 5, 2003Publication date: May 20, 2004Applicant: Renesas Technology Corp.Inventors: Yoshinori Sakamoto, Tatsuya Bando