Abstract: An electro-optical device substrate includes a substrate, a plurality of data lines and a plurality of scanning lines crossing each other on the substrate, and a plurality of pixels defined by the plurality of data lines and the plurality of scanning lines so as to correspond to intersections thereof. Each pixel includes a pixel electrode, a conducting layer formed in a non-opening region separating an opening region of the pixel from that of another pixel, the conducting layer having a protruding portion protruding into the opening region from a part of one of a plurality of region edges defining the opening region, and a first contact portion electrically connecting the pixel electrode and the protruding portion.

Abstract: A semiconductor layer of a TFT is continuously formed from an inside of an open hole portion overlapping with an intersection up to an outside of the open hole portion and includes a first source/drain area electrically connected to a surface portion of the data line exposed to a bottom surface of the open hole portion, a channel area disposed on a side wall of the open hole portion, and a second source/drain area formed outside the open hole portion and electrically connected to the pixel electrode. The gate electrode of the TFT is formed inside the open hole portion so as to overlap with at least the channel area and is electrically connected to a scanning line.

Abstract: For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate.

Abstract: Disclosed is a substrate for an electro-optical device including: a substrate; a plurality of data lines and a plurality of scanning lines which intersect with other on the substrate; a pixel electrode formed in each of a plurality of pixels which configure a display region on the substrate and are defined in correspondence with intersections between the plurality of data lines and the plurality of scanning lines; a transistor provided in each of non-opening regions which discriminate between opening regions of the plurality of pixels and including a semiconductor layer including a channel region having a channel length in one direction of the display region, a data line side source/drain region electrically connected to the data line, a pixel electrode side source/drain region electrically connected to the pixel electrode, a first junction region formed between the channel region and the data line side source/drain region, and a second junction region formed between the channel region and the pixel electrode

Abstract: A hexagonal type barium titanate powder comprising barium titanate as a main component shown by a generic formula of (Ba1-?M?)A(Ti1-?Ga?)BO3 and having hexagonal structure wherein; an effective ionic radius of 12-coordinated “M” is ?25% or more to +25% or less with respect to an effective ionic radius of 12-coordinated Ba2+, and said A, B, ? and ? satisfy relations of 0.975<(A/B)?1.015, 0.0015??<0.005, 0.075???0.15.

Abstract: To provide a hexagonal type barium titanate powder having a fine and uniform particle size and contributing to a thinner dielectric layer. A hexagonal type barium titanate powder according to the present invention has the following characteristics that a maximum particle diameter is 1.0 ?m or less, a ratio of 90% accumulated particle diameter and 50% accumulated particle diameter is 3.0 or less, and a hexagonal ratio is 50% or more.

Abstract: An image forming apparatus is provided with a processing unit that performs a predetermined process, a power-supply shutting unit that shuts off power supply to the processing unit when a predetermined door is opened, a voltage detecting unit that detects a decrease in voltage at a point located posterior to the power-supply shutting unit, and a communication control unit that does not initiate communication with the processing unit if the decrease in voltage is detected by the voltage detecting unit before a start of the communication with the processing unit, and judges the just-ended communication as abnormal if the decrease in voltage is detected by the voltage detecting unit after the end of the communication with the processing unit.

Abstract: For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate.

Abstract: A semiconductor layer of a TFT is continuously formed from an inside of an open hole portion overlapping with an intersection up to an outside of the open hole portion and includes a first source/drain area electrically connected to a surface portion of the data line exposed to a bottom surface of the open hole portion, a channel area disposed on a side wall of the open hole portion, and a second source/drain area formed outside the open hole portion and electrically connected to the pixel electrode. The gate electrode of the TFT is formed inside the open hole portion so as to overlap with at least the channel area and is electrically connected to a scanning line.

Abstract: A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.

Abstract: An electrooptical device includes a substrate, a pixel electrode which is provided on the substrate, a semiconductor element which is provided so as to correspond to the pixel electrode, and a light reflection portion formed with a groove formed on at least a part of the substrate. In the electrooptical device, the semiconductor element is arranged so as to overlap with the light reflection portion in plan view and is arranged on a flattened film provided so as to cover at least an opening of the groove.

Abstract: An electro-optical device includes: a plurality of data lines blocked for every “m” (m is an integer of 2 or greater) columns; a sampling signal output circuit which outputs sampling signals; and a sampling circuit which has sampling switches provided in the data lines, respectively, and which turns on the sampling switches to sample data signals supplied to “n” (n is an integer of 2 or greater) image signal lines, to the data lines. The sampling circuit groups the blocks for every “n” blocks, makes individual blocks in the same group correspond to different image signal lines, respectively, to connect the sampling switches in the individual blocks to corresponding image signal lines, supplies one sampling signal to two adjacent groups, and when any one sampling signal is supplied, simultaneously turns on sampling switches in the same columns in “n” blocks belonging to one group of two groups.

Abstract: Dielectric ceramic composition includes a hexagonal type barium titanate as a main component shown by a generic formula (Bai-?M?)A(Ti1-?Mn?)BO3 and having hexagonal structure wherein an effective ionic radius of 12-coordinated “M” is ?20% or more to +20% or less with respect to an effective ionic radius of 12-coordinated Ba2+ and the A, B, ? and ? satisfy relations of 0.900?(A/B)?1.040, 0.003???0.05, 0.03???0.2, and as subcomponents, with respect to the main component, certain contents of alkaline earth oxide such as MgO and the like, Mn3O4 and/or Cr2O3, CuO, Al2O3, rare earth element oxide and glass component including SiO2. According to the present invention, it can be provided the hexagonal type barium titanate powder and dielectric ceramic composition which are preferable for producing electronic components such as a capacitor and the like showing high specific permittivity, having advantageous insulation property and sufficient reliability.

Abstract: The disclosed is a dielectric ceramic composition in which dielectric particles 2a are formed. The dielectric particle 2a has a core 22a comprised of hexagonal barium titanate, and a shell 24a formed on an outer circumference of the core 22a and comprised of cubical or tetragonal barium titanate. The purpose of the present invention is to provide a new dielectric ceramic composition, in which permittivity is hardly lowered due to size effect, a good balance between high insulation resistance and permittivity can easily be achieved, and changes in insulation resistance and specific permittivity due to temperature are small; and an electronic component such as a multilayer ceramic capacitor using the dielectric ceramic composition as its dielectric layer.

Abstract: Dielectric ceramic composition includes a hexagonal type barium titanate as a main component shown by a generic formula of (Ba1-?M?)A(Ti1-?Mn?)BO3 and having hexagonal structure wherein an effective ionic radius of 12-coordinated “M” is ?20% or more to +20% or less with respect to an effective ionic radius of 12-coordinated Ba2+ and the A, B, ? and ? satisfy relations of 1.000<(A/B)?1.040, 0??<0.003, 0.03???0.2, and as subcomponents, with respect to the main component, certain contents of alkaline earth oxide such as MgO and the like, Mn3O4 and/or Cr2O3, and CuO and Al2O3 and rare earth element oxide and glass component including SiO2. According to the present invention, it can be provided the hexagonal type barium titanate powder and the dielectric ceramic composition which are preferable for producing electronic components such as a capacitor and the like showing comparatively high specific permittivity, having advantageous insulation property and having sufficient reliability.

Abstract: For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate.

Abstract: An electro-optical device includes a switching element with a gate electrode provided opposite to the channel region. The gate electrode has a ring-shaped structure that surrounds a junction region between the channel region and a source/drain region.

Abstract: In a semiconductor integrated circuit device of a liquid crystal display drive controller, the present invention is intended to suppress an increase in the number of output terminals for interface control signals for control of parallel interface to a sub liquid crystal display controller. A host interface circuit comprises a first serial interface circuit for serial data input and output in a differential manner, a parallel interface circuit, and other interface circuits. When the first serial interface circuit is selected for use as the host interface, the host interface circuit outputs in parallel predetermined information input via the first serial interface circuit from the parallel interface circuit to outside and generates interface control signals for the parallel output. External terminals for host interface assigned to the other interface circuits are used for double duty to output the interface control signals.

Abstract: For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate.

Abstract: A luminance signal Ya and a color-difference signal Ua/Va constituting an input image signal is transferred to a frame memory (first memory) in the unit of line synchronously with its horizontal synchronous signal and written therein. A memory TG211 reads out a read-out request RRQ. The cycle of this request RRQ is a time computed based on a single vertical effective period of an output image signal Sc and the number of lines objective for rate conversion of an input image signal Sa. The luminance signal Ya and color-difference signal Ua/Va are transferred in the unit of line from the frame memory to rate conversion units (second memory) through buffers. There occurs no deflection in this transfer cycle and in each transfer cycle, the stable data transmission band can be secured.