Abstract: An ECU executes a program that includes the steps of setting a line pressure to a line pressure (1) that is appropriate for improving fuel efficiency, if an automatic transmission is not shifting, and a deceleration slip control for a lock-up clutch is not being executed; setting the line pressure to a line pressure (2) that is equal to or lower than a line pressure (3) that is appropriate when the automatic transmission is shifting, if it is determined that the automatic transmission is not shifting, and the deceleration slip control is being executed; and setting the line pressure to the line pressure (3), if it is determined that the automatic transmission is shifting. The line pressure (1) is lower than the line pressure (2). The line pressure (2) is equal to or lower than the line pressure (3).

Abstract: An ECU executes a program that includes the steps of setting an abnormality flag when a hydraulic pressure switch is on even though a lock-up clutch is in a lock-up OFF state, forcing an SLU off when the lock-up clutch is on and the abnormality flag is on, determining that there is an SLU failure when the lock-up clutch is still in a lock-up ON state after a predetermined period of time has passed, and determining that there is a hydraulic pressure switch failure when the lock-up clutch is not in the lock-up ON state after the predetermined period of time has passed.

Abstract: An ECU executes a program that includes a step of determining whether an output shaft rotation speed NOUT is equal to or greater than a reference rotation speed at which determining regions with all of the gear speeds in a stepped automatic transmission do not overlap, a step of determining that there is an abnormality in the gear speed by dividing the turbine rotation speed NT by the output shaft rotation speed NOUT if the output shaft rotation speed NOUT is not equal to or greater than that reference rotation speed, and a step of determining that there is an abnormality in the gear speed by subtracting a value, which is obtained by multiplying the output shaft rotation speed NOUT by the gear ratio, from the turbine rotation speed NT if the output shaft rotation speed NOUT is equal to or greater than that reference rotation speed.

Abstract: An ECT_ECU of the present invention executes a program including the step of setting a determination time T for determining the completion of an upshift in an accelerator off mode to a short determination time T (X) when a slip value NS (NS=NE?NT) between an engine revolution NE and a turbine revolution NT is smaller than a predetermined slip value NS (0) (when the difference between NT and NE is large), and the step of setting the determination time T to a long determination time T (Y) when the slip value NS (NS=NE?NT) is larger than the predetermined slip value NS (0) (when the difference between NT and NE is small.

Abstract: A first electrode part in a rod shape is placed on an upper side, and a second electrode part in a rod shape having a higher melting point than that of the first electrode part is placed on a lower side, so that ends of the first and second electrode parts are brought into contact. Contact ends or vicinities thereof are irradiated with a laser beam, so that the electrode parts are welded. Here, a region irradiated with the laser beam is in a long narrow shape having a minor axis directed in a vertical direction and a major axis directed in a horizontal direction. This makes it possible to manufacture an electrode with a consistent high quality with a high yield.

Abstract: A first electrode part in a rod shape is placed on an upper side, and a second electrode part in a rod shape having a higher melting point than that of the first electrode part is placed on a lower side, so that ends of the first and second electrode parts are brought into contact. Contact ends or vicinities thereof are irradiated with a laser beam, so that the electrode parts are welded. Here, a region irradiated with the laser beam is in a long narrow shape having a minor axis directed in a vertical direction and a major axis directed in a horizontal direction. This makes it possible to manufacture an electrode with a consistent high quality with a high yield.

Abstract: A manufacture method for a semiconductor device includes the steps of: (a) transporting a silicon wafer into a reaction chamber having first and second gas introducing inlet ports; (b) introducing an oxidizing atmosphere via the first gas introducing inlet port and raising the temperature of the silicon wafer to an oxidation temperature; (c) introducing a wet oxidizing atmosphere to form a thermal oxide film on the surface of the silicon wafer; (d) purging gas in the reaction chamber by using inert gas to lower a residual water concentration to about 1000 ppm or lower; and (e) introducing an NO or N2O containing atmosphere into the reaction chamber via the second gas introducing inlet port while the silicon wafer is maintained above 700° C. and above the oxidation temperature, to introduce nitrogen into the thermal oxide film and form an oxynitride film. A thin oxynitride film can be manufactured with good mass productivity.

Abstract: The present invention provides means for diagnosing a genetic risk for bone loss after implant treatment. A genetic risk for bone loss after implant treatment is diagnosed by the method which comprises the following steps: (i) analyzing polymorphism at the base number position 9215 of the bone morphogenetic protein-4 gene in a nucleic acid sample; (ii) determining, based on information about polymorphism which was obtained in the step (i), the type of gene in the nucleic acid sample with respect to the polymorphism of the bone morphogenetic protein-4 gene; and (iii) diagnosing a genetic risk for bone loss based on the type of gene which was determined.

Abstract: A first electrode part in a rod shape is placed on an upper side, and a second electrode part in a rod shape having a higher melting point than that of the first electrode part is placed on a lower side, so that ends of the first and second electrode parts are brought into contact. Contact ends or vicinities thereof are irradiated with a laser beam, so that the electrode parts are welded. Here, a region irradiated with the laser beam is in a long narrow shape having a minor axis directed in a vertical direction and a major axis directed in a horizontal direction. This makes it possible to manufacture an electrode with a consistent high quality with a high yield.

Abstract: A first electrode part in a rod shape is placed on an upper side, and a second electrode part in a rod shape having a higher melting point than that of the first electrode part is placed on a lower side, so that ends of the first and second electrode parts are brought into contact. Contact ends or vicinities thereof are irradiated with a laser beam, so that the electrode parts are welded. Here, a region irradiated with the laser beam is in a long narrow shape having a minor axis directed in a vertical direction and a major axis directed in a horizontal direction. This makes it possible to manufacture an electrode with a consistent high quality with a high yield.

Abstract: In a vehicle having a hydraulic power transmitting device equipped with a lock-up clutch on an output side of the engine, a control apparatus for controlling the lock-up clutch is provided which includes a lock-up clutch control unit that places the lock-up clutch in a slipping state when the vehicle is started so that torque received from the engine is transmitted to a later-stage transmission via the lock-up clutch as well as the hydraulic power transmitting device.

Abstract: A first electrode part in a rod shape is placed on an upper side, and a second electrode part in a rod shape having a higher melting point than that of the first electrode part is placed on a lower side, so that ends of the first and second electrode parts are brought into contact. Contact ends or vicinities thereof are irradiated with a laser beam, so that the electrode parts are welded. Here, a region irradiated with the laser beam is in a long narrow shape having a minor axis directed in a vertical direction and a major axis directed in a horizontal direction. This makes it possible to manufacture an electrode with a consistent high quality with a high yield.

Abstract: When a downshift instruction has been detected, the oil pressure of a lookup clutch is controlled, and the state of operation of the automatic transmission is detected. If a starting condition has been met, a slip rotation speed of the lockup clutch is calculated, and if the calculated slip rotation speed is greater than or equal to a reference rotation speed, the calculated slip rotation speed is set as a target slip rotation speed. If a condition for converging the target slip rotation speed has been met, the target slip rotation speed is then converged to a steady target rotation speed.

Abstract: A first electrode part in a rod shape is placed on an upper side, and a second electrode part in a rod shape having a higher melting point than that of the first electrode part is placed on a lower side, so that ends of the first and second electrode parts are brought into contact. Contact ends or vicinities thereof are irradiated with a laser beam, so that the electrode parts are welded. Here, a region irradiated with the laser beam is in a long narrow shape having a minor axis directed in a vertical direction and a major axis directed in a horizontal direction. This makes it possible to manufacture an electrode with a consistent high quality with a high yield.

Abstract: A manufacture method for a semiconductor device includes the steps of: (a) transporting a silicon wafer into a reaction chamber having first and second gas introducing inlet ports; (b) introducing an oxidizing atmosphere via the first gas introducing inlet port and raising the temperature of the silicon wafer to an oxidation temperature; (c) introducing a wet oxidizing atmosphere to form a thermal oxide film on the surface of the silicon wafer; (d) purging gas in the reaction chamber by using inert gas to lower a residual water concentration to about 1000 ppm or lower; and (e) introducing an NO or N2O containing atmosphere into the reaction chamber via the second gas introducing inlet port while the silicon wafer is maintained above 700° C. and above the oxidation temperature, to introduce nitrogen into the thermal oxide film and form an oxynitride film. A thin oxynitride film can be manufactured with good mass productivity.

Abstract: A manufacture method for a semiconductor device includes the steps of: (a) transporting a silicon wafer into a reaction chamber having first and second gas introducing inlet ports; (b) introducing an oxidizing atmosphere via the first gas introducing inlet port and raising the temperature of the silicon wafer to an oxidation temperature; (c) introducing a wet oxidizing atmosphere to form a thermal oxide film on the surface of the silicon wafer; (d) purging gas in the reaction chamber by using inert gas to lower a residual water concentration to about 1000 ppm or lower; and (e) introducing an NO or N2O containing atmosphere into the reaction chamber via the second gas introducing inlet port while the silicon wafer is maintained above 700° C. and above the oxidation temperature, to introduce nitrogen into the thermal oxide film and form an oxynitride film. A thin oxynitride film can be manufactured with good mass productivity.

Abstract: A copolymer of cyclopentadiene and/or dicyclopentadiene and a vinyl-substituted aromatic compound. The copolymer has a softening point of from 60 to 130° C., a vinyl-substituted aromatic compound content of from 30 to 90% by weight, a bromine number of from 30 to 90 g/110 g, a number average molecular weight of from 400 to 1,000, and a weight average molecular weight/number average molecular weight (Mw/Mn) ratio of 2.5 or less, and a process for producing the same. The copolymer is useful in the production of a tackifier and an adhesive.

Abstract: A hydrogenated product of a copolymer of cyclopentadiene and/or dicyclopentadiene and a vinyl-substituted aromatic compound. The copolymer has a softening point of from 60 to 130.degree. C., a vinyl-substituted aromatic compound content of from 30 to 90% by weight, a bromine number of from 30 to 90 g/100 g, a number average molecular weight of from 400 to 1,000, and a weight average molecular weight/number average molecular weight (Mw/Mn) ratio of 2.5 or less. The hydrogenated product has a softening point of 60 to 130.degree. C., a vinyl-substituted aromatic compound content of 0 to 35% by weight, a bromine number of 0 to 300 g/100 g, a number average molecular weight of 400 to 1,000 and a weight average molecular weight/number average molecular weight ratio of 2.5 or less. The hydrogenated product is useful as a substrate in the production of a tackifier and an adhesive.

Abstract: A method for mounting electronic components on circuit boards by operating an electronic component-mounting apparatus based on numerical control (NC) data involves the storage of component information, including supply numbers of components purchased from a plurality of makers, maker names of the purchased components, sizes thereof, configurations thereof, and mounting conditions, into a component mounting data base. A correspondence is established between factory numbers listed in a CAD data table and the supply numbers, thereby allowing the management of the supply numbers by grouping one or more supply numbers with each factory number. The supply numbers corresponding to a factory number are used as an index to obtain component information corresponding to each of the supply numbers. This obtained component information is used to generate the numerical control (NC) data for the component-mounting apparatus.

Abstract: There is provided a process for recovering boron trifluoride catalyst from an oligomerization mixture, which comprises introducing an oligomerization mixture containing catalyst comprising boron trifluoride and a complex of boron trifluoride and cocatalyst into a copper-nickel-made recovery reactor, heating the oligomerization mixture at or above a decomposition temperature of the complex, and separating and recovering boron trifluoride from the oligomerization mixture. According to the process, the boron trifluoride can be recovered effectively from the oligomerization mixture without causing the corrosion problem of the recovery reactor.