Abstract: A method of manufacturing a structure is provided in which a burr portion can be more reliably cut. In a burr portion shaping step, the burr portion is sucked to an engaging portion by a suction part to shape the burr portion along the engaging portion, and in a cutting step, ae movable portion is moved relative to first and second split molds with the burr portion being shaped along the engaging portion, thereby the burr portion is cut from a molded main body along a cutting line.

Abstract: A semiconductor memory device according to an embodiment, includes a plurality of semiconductor pillars extending in a first direction and being arranged along a second direction crossing the first direction, two interconnects extending in the second direction and being provided on two sides of the plurality of semiconductor pillars in a third direction crossing the first direction and the second direction, and an electrode film disposed between each of the semiconductor pillars and each of the interconnects. The two interconnects are drivable independently from each other.

Abstract: A multipolar circuit breaker is provided for securely operating tripping sections of other poles when the tripping section of any pole operates. In the case of a first embodiment, a protrusion 5 for further moving a trigger plate in the tripping direction when a cradle 3 is tripped is provided for the cradle 3 of each pole so that the movement of the trigger plate 1 is securely transmitted to other poles connected by a trigger joint 2. Moreover, in the case of a second embodiment, a protrusion for further moving the trigger plate 1 in the tripping direction by pushing the cradle 3 when the cradle 3 is tripped is provided for the trigger plate of each pole to obtain the same above mentioned advantage.