Patents by Inventor Tatsuya Naito
Tatsuya Naito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250254982Abstract: Provided is a semiconductor device including a transistor portion and a diode portion, including: a plurality of trench portions provided at a front surface of a semiconductor substrate and including a gate trench portion; an emitter region of a first conductivity type provided above a base region and having a doping concentration higher than that of a drift region; and a first accumulation region of the first conductivity type provided below the base region and having a doping concentration higher than that of the drift region; wherein the transistor portion includes a boundary region provided adjacent to the diode portion and including a boundary mesa portion, wherein the boundary region includes the emitter region, a second accumulation region of the first conductivity type having a doping concentration higher than that of the first accumulation region, and the gate trench portion provided in contact with the boundary mesa portion.Type: ApplicationFiled: April 21, 2025Publication date: August 7, 2025Inventors: Toru MURAMATSU, Tatsuya NAITO, Yosuke SAKURAI
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Publication number: 20250212436Abstract: Provided is a semiconductor device with a transistor portion and a diode portion, including a drift region of a first conductivity type and a front surface side electrode provided above a semiconductor substrate. The transistor portion may have a base region of a second conductivity type provided above the drift region; a trench contact portion provided on a front surface of the semiconductor substrate; and a first plug region of a second conductivity type with a higher doping concentration than the base region, under the trench contact portion. The diode portion may have an anode region of a second conductivity type provided above the drift region; and a second plug region of a second conductivity type with a higher doping concentration than the anode region. The second plug region may contact the front surface side electrode in a position shallower than the first plug region.Type: ApplicationFiled: October 22, 2024Publication date: June 26, 2025Inventors: Toru MURAMATSU, Tatsuya NAITO
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Publication number: 20250185267Abstract: Provided is a semiconductor device including a semiconductor substrate, where the semiconductor substrate has: a transistor portion and a diode portion alternately arranged along a first direction, each having a longitudinal part in a second direction; and a current sensing unit arranged facing the transistor portion in the second direction, the transistor portion, the diode portion, and the current sensing unit each include: a drift region of a first conductivity type; and a base region of a second conductivity type provided between the drift region and an upper surface of the semiconductor substrate.Type: ApplicationFiled: January 31, 2025Publication date: June 5, 2025Inventors: Kazuki KAMIMURA, Tatsuya NAITO
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Publication number: 20250159915Abstract: There is provided a semiconductor device comprising: a semiconductor substrate including a first-conductivity-type drift region, a first-conductivity-type emitter region provided above the drift region inside the semiconductor substrate and having a doping concentration higher than the drift region; a second-conductivity-type base region provided between the emitter and drift regions inside the semiconductor substrate; a first-conductivity-type accumulation region provided between the base and drift regions inside the semiconductor substrate and having a doping concentration higher than the drift region; and trench portions provided from an upper surface to an inside of the semiconductor substrate and including gate and dummy trench portions. In a mesa portion sandwiched by two trench portions, one of which is the gate trench portion, a depth of the accumulation region from the upper surface reaches a range of bottom ? of a depth of the gate trench portion.Type: ApplicationFiled: January 15, 2025Publication date: May 15, 2025Inventor: Tatsuya NAITO
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Publication number: 20250151302Abstract: A doping concentration distribution in an accumulation region in a depth direction of a semiconductor substrate has a maximum portion at which a doping concentration reaches a maximum value, an upper gradient portion in which the concentration decreases from the maximum portion to a base region, a lower gradient portion in which the concentration decreases from the maximum portion to a drift region, and a kink portion at which a differential value of the doping concentration distribution exhibits an extreme value in a region except a region in which the differential value exhibits a maximum value or a minimum value.Type: ApplicationFiled: January 9, 2025Publication date: May 8, 2025Inventor: Tatsuya NAITO
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Patent number: 12243870Abstract: A semiconductor device, including a semiconductor substrate having a diode portion, wherein the diode portion includes: an anode region which is provided on a front surface of the semiconductor substrate and is of a second conductivity type; a trench portion provided so as to extend in a predetermined extending direction on the front surface of the semiconductor substrate; a trench contact portion provided on the front surface of the semiconductor substrate; and a plug region which is provided at a lower end of the trench contact portion and is of a second conductivity type, and which has a doping concentration higher than that of the anode region, wherein a plurality of plug regions, each of which being the plug region, is provided separately from each other along the extending direction, is provided.Type: GrantFiled: May 17, 2022Date of Patent: March 4, 2025Assignee: FUJI ELECTRIC CO., LTD.Inventors: Toshiyuki Matsui, Tatsuya Naito, Kazuki Kamimura
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Patent number: 12224319Abstract: A semiconductor device includes a first-conductivity-type drift region provided in a semiconductor substrate; a trench portion provided from an upper surface of the semiconductor substrate to an inside of the semiconductor substrate, and extending in a predetermined extending direction in a plane of the upper surface of the semiconductor substrate; a mesa portion provided in contact with the trench portion in an array direction orthogonal to the extending direction; a second-conductivity-type base region provided in the mesa portion above the drift region and in contact with the trench portion; and a second-conductivity-type floating region provided in the mesa portion below the base region, in contact with the trench portion, and provided in at least a part of the mesa portion in the array direction.Type: GrantFiled: September 20, 2023Date of Patent: February 11, 2025Assignee: FUJI ELECTRIC CO., LTD.Inventor: Tatsuya Naito
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Patent number: 12206016Abstract: A semiconductor device includes a first region in which a drift, base, and accumulation regions are stacked. Transistor cells are each provided partially in the first region and include at least one trench extending into the drift region. A second region includes a well region provided on an edge termination region side surrounding the first region. A third region of a predetermined width is between the first and second regions, inside of which the transistor cells are partially provided. A bottom region is provided in the first region, adjacent to a bottom of the trench, and between the accumulation and drift regions, the bottom region not extending into the third region, its upper surface located below the base region's lower surface; and first and second electrodes configured to flow current therebetween. The bottom region is spaced apart from the base region by the accumulation region in the depth direction.Type: GrantFiled: December 27, 2023Date of Patent: January 21, 2025Assignee: FUJI ELECTRIC CO., LTD.Inventor: Tatsuya Naito
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Patent number: 12199172Abstract: A doping concentration distribution in an accumulation region in a depth direction of a semiconductor substrate has a maximum portion at which a doping concentration reaches a maximum value, an upper gradient portion in which the concentration decreases from the maximum portion to a base region, a lower gradient portion in which the concentration decreases from the maximum portion to a drift region, and a kink portion at which a differential value of the doping concentration distribution exhibits an extreme value in a region except a region in which the differential value exhibits a maximum value or a minimum value.Type: GrantFiled: May 17, 2022Date of Patent: January 14, 2025Assignee: FUJI ELECTRIC CO., LTD.Inventor: Tatsuya Naito
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Publication number: 20240429234Abstract: A semiconductor device, including a semiconductor substrate, a transistor section and a diode section arranged in a predetermined arrangement direction and provided on the semiconductor substrate, is provided. The diode section includes a drift region of a first conductivity-type provided in the semiconductor substrate, a base region of a second conductivity-type extending to a height of an upper surface of the semiconductor substrate and provided above the drift region, first cathode regions of the first conductivity-type, and second and third cathode regions of the second conductivity-type. The first, second, and third cathode regions extend to a height of a lower surface of the semiconductor substrate in a depth direction and provided below the drift region. The first and second cathode regions are provided in contact with each other, alternating in the arrangement direction, and sandwiched between the third cathode regions in an extension direction orthogonal to the arrangement direction.Type: ApplicationFiled: September 5, 2024Publication date: December 26, 2024Inventor: Tatsuya NAITO
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Publication number: 20240405122Abstract: A semiconductor device including an active portion is provided, the semiconductor device comprising: a drift region of a first conductivity type provided in the semiconductor substrate; a base region of a second conductivity type provided above the drift region; a gate pad provided above the semiconductor substrate; an emitter electrode provided above the semiconductor substrate; a gate trench portion provided on a front surface of the semiconductor substrate in the active portion; and a gate wiring portion for connecting the gate pad and the gate trench portion; wherein the gate wiring portion has: a first gate trench wiring portion which extends in a predetermined direction; and a second gate trench wiring portion which extends in a different direction from the first gate trench wiring portion and intersects the first gate trench wiring portion at an intersection portion; and the emitter electrode is provided above the intersection portion.Type: ApplicationFiled: April 21, 2024Publication date: December 5, 2024Inventors: Yosuke SAKURAI, Seiji NOGUCHI, Tatsuya NAITO, Nao SUGANUMA, Takuya YAMADA, Masaaki FURUKAWA, Ryutaro HAMASAKI
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Publication number: 20240391459Abstract: A vehicle control device according to one aspect of the present invention includes a storage device configured to store a program, and a processor that is connected to the storage device, in which the processor executes a program stored in the storage device, thereby detecting a road surface condition of a road surface on which a host vehicle is present, detecting a preceding vehicle that is present in front of the host vehicle and moves in the same direction as the host vehicle, deriving a spray distance of a sprayed object caused by the preceding vehicle when the preceding vehicle is detected and the road surface condition is a predetermined condition, and calculating a recommended inter-vehicle distance on the basis of the spray distance.Type: ApplicationFiled: February 1, 2024Publication date: November 28, 2024Inventors: Tatsuya Naito, Mutsuki Hirooka, Kazuhiko Kameda, Yuichi Yoshii, Takuro Hashimoto
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Publication number: 20240371860Abstract: A semiconductor device, allowing easy hole extraction, including a semiconductor substrate having drift and base regions; and transistor and diode portions, in which trench portions and mesa portions are formed, is provided. The transistor portion includes emitter and contact regions above the base region and exposed to an upper surface of the semiconductor substrate. The emitter region has a higher concentration than the drift region. The contact region has a higher concentration than the base region. The mesa portions include boundary mesa portion(s) at a boundary between the transistor and diode portions. The trench portions include dummy trench portion(s) provided adjacent to a trench portion adjacent to the boundary mesa portion(s) and provided on the transistor portion side relative to the trench portion adjacent to the boundary mesa portion(s). The boundary mesa portion(s) include a base boundary mesa portion in which the base region is exposed to the upper surface.Type: ApplicationFiled: July 18, 2024Publication date: November 7, 2024Inventor: Tatsuya NAITO
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Publication number: 20240347586Abstract: A semiconductor device is provided including: a semiconductor substrate having a first-conductivity-type drift region; a second-conductivity-type base region provided above the drift region inside the semiconductor substrate; an accumulation region provided between the drift region and the lower surface of the base region inside the semiconductor substrate, and having a lower second-conductivity-type carrier mobility than the drift region and the base region; a gate trench portion provided from an upper surface of the semiconductor substrate to an inside of the semiconductor substrate, where the gate trench portion is in contact with the base region; and a carrier passage region occupying at least a partial region between the accumulation region and the gate trench portion inside the semiconductor substrate, where the carrier passage region has a higher second-conductivity-type carrier mobility than the accumulation region.Type: ApplicationFiled: June 23, 2024Publication date: October 17, 2024Inventor: Tatsuya NAITO
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Publication number: 20240328865Abstract: A system and method for sensor driving voltage control are provided. The system for sensor driving voltage control includes a sensor arranged on an outer side of a vehicle, an external temperature detector, and a control device. The external temperature detector is configured to detect an external temperature. The control device is configured to control a voltage value provided to the sensor and includes a voltage value determining unit configured to determine a voltage value for current supply to the sensor and a voltage value adjusting unit configured to adjust the voltage value determined by the voltage value determining unit. The voltage value determining unit sets a high voltage value higher than a normal voltage value when the external temperature detected by the external temperature detector is below a predetermined temperature. The normal voltage value is a voltage value set when the external temperature is above the predetermined temperature.Type: ApplicationFiled: January 26, 2024Publication date: October 3, 2024Applicant: Honda Motor Co., Ltd.Inventors: Tatsuya NAITO, Mutsuki HIROOKA, Kazuhiko KAMEDA, Yuichi YOSHII, Takuro HASHIMOTO
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Publication number: 20240326693Abstract: A door mirror rotation control device includes a control part controlling drive of a motor to cause a door mirror to switch between a folded status and an unfolded status. The control part includes a motor drive controller controlling drive of the motor and a motor action determination part determining a drive content of the motor. The motor action determination part detects raindrop information during drive of the motor, and determines the drive content of the motor as a normal action or a specific action based on whether the raindrop information is acquired. Compared to the normal action, a frequency of rotation changes of the motor during a period until drive of the motor ends is high in the specific action. The motor drive controller is configured to control drive of the motor in the normal action or the specific action determined by the motor action determination part.Type: ApplicationFiled: February 26, 2024Publication date: October 3, 2024Applicant: Honda Motor Co., Ltd.Inventors: Tatsuya NAITO, Mutsuki HIROOKA, Kazuhiko KAMEDA, Yuichi YOSHII, Takuro HASHIMOTO
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Patent number: 12087765Abstract: A semiconductor device, including a semiconductor substrate, a transistor section and a diode section arranged in a predetermined arrangement direction and provided on the semiconductor substrate, is provided. The diode section includes a drift region of a first conductivity-type provided in the semiconductor substrate, a base region of a second conductivity-type extending to a height of an upper surface of the semiconductor substrate and provided above the drift region, first cathode regions of the first conductivity-type, and second and third cathode regions of the second conductivity-type. The first, second, and third cathode regions extend to a height of a lower surface of the semiconductor substrate in a depth direction and provided below the drift region. The first and second cathode regions are provided in contact with each other, alternating in the arrangement direction, and sandwiched between the third cathode regions in an extension direction orthogonal to the arrangement direction.Type: GrantFiled: October 6, 2022Date of Patent: September 10, 2024Assignee: FUJI ELECTRIC CO., LTD.Inventor: Tatsuya Naito
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Patent number: 12080707Abstract: A semiconductor device includes a semiconductor substrate having a first conductivity type drift region and a second conductivity type base region above the drift region, trench portions at an upper surface of the semiconductor substrate arrayed parallel to one another, each of them penetrating the base region, and mesa portions between respective trench portions. Among the mesa portions, at least one mesa portion includes a first conductivity type first semiconductor region having a higher concentration than the drift region, a second conductivity type second semiconductor region having a higher concentration than the base region, and a first conductivity type accumulation region between the base and drift regions and has a higher concentration than the drift region. The drift region does not extend above the accumulation region. In a longitudinal direction of the trench portions, the accumulation region extends beyond an end portion of the first semiconductor region.Type: GrantFiled: July 18, 2023Date of Patent: September 3, 2024Assignee: FUJI ELECTRIC CO., LTD.Inventor: Tatsuya Naito
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Publication number: 20240258412Abstract: Provided is a method for manufacturing a semiconductor apparatus including: a transistor portion provided in a semiconductor substrate of a first conductivity type and including a base region of a second conductivity type; a diode portion provided in the substrate and including an anode region of the second conductivity type; and a first trench contact provided in the diode portion on a front surface side of the substrate, the method comprising: acquiring a condition of trade-off between a reverse recovery loss of the diode portion and a forward voltage of the diode portion; deciding a target characteristic required for the semiconductor apparatus; determining whether a first depth of the trench contact according to the characteristic satisfies a diode condition which is a condition for realizing the characteristic, of the condition of trade-off; and manufacturing the semiconductor apparatus in which a depth of the trench contact is the first depth.Type: ApplicationFiled: November 21, 2023Publication date: August 1, 2024Inventors: Toshiki SUZUKI, Toshiyuki MATSUI, Tatsuya NAITO, Kazuki KAMIMURA
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Patent number: 12027578Abstract: A semiconductor device is provided including: a semiconductor substrate having a first-conductivity-type drift region; a second-conductivity-type base region provided above the drift region inside the semiconductor substrate; an accumulation region provided between the drift region and the lower surface of the base region inside the semiconductor substrate, and having a lower second-conductivity-type carrier mobility than the drift region and the base region; a gate trench portion provided from an upper surface of the semiconductor substrate to an inside of the semiconductor substrate, where the gate trench portion is in contact with the base region; and a carrier passage region occupying at least a partial region between the accumulation region and the gate trench portion inside the semiconductor substrate, where the carrier passage region has a higher second-conductivity-type carrier mobility than the accumulation region.Type: GrantFiled: December 6, 2021Date of Patent: July 2, 2024Assignee: FUJI ELECTRIC CO., LTD.Inventor: Tatsuya Naito