Patents by Inventor Tatsuya NAKAUCHI

Tatsuya NAKAUCHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10344184
    Abstract: Proposed is a polishing composition including hydroxyethyl cellulose, water and abrasive grains, wherein the hydroxyethyl cellulose has a molecular weight of 500,000 or more and 1,500,000 or less, and the proportion of the hydroxyethyl cellulose adsorbed to the abrasive grains is 30% or more and 90% or less.
    Type: Grant
    Filed: March 30, 2015
    Date of Patent: July 9, 2019
    Assignee: NITTA HAAS INCORPORATED
    Inventors: Masashi Teramoto, Tatsuya Nakauchi, Noriaki Sugita, Shinichi Haba, Akiko Miyamoto
  • Patent number: 10249486
    Abstract: Proposed is a method for polishing a semiconductor substrate including an intermediate polishing step of polishing in such a way that the number of surface defects having heights of less than 3 nm is 45% or more of the total number of the surface defects on the surface of a semiconductor substrate, and a final polishing step of finish-polishing the semiconductor substrate after the intermediate polishing step.
    Type: Grant
    Filed: March 30, 2015
    Date of Patent: April 2, 2019
    Assignee: NITTA HAAS INCORPORATED
    Inventors: Masashi Teramoto, Tatsuya Nakauchi, Noriaki Sugita, Shinichi Haba, Akiko Miyamoto
  • Patent number: 10077380
    Abstract: Proposed is a polishing composition including hydroxyethyl cellulose, water and abrasive grains, wherein the hydroxyethyl cellulose has a molecular weight of 500,000 or more and 1,500,000 or less, and the mass ratio of the hydroxyethyl cellulose to the abrasive grains is 0.0075 or more and 0.025 or less.
    Type: Grant
    Filed: March 30, 2015
    Date of Patent: September 18, 2018
    Assignee: NITTA HAAS INCORPORATED
    Inventors: Masashi Teramoto, Tatsuya Nakauchi, Noriaki Sugita, Shinichi Haba, Akiko Miyamoto
  • Publication number: 20170178888
    Abstract: Proposed is a method for polishing a semiconductor substrate including an intermediate polishing step of polishing in such a way that the number of surface defects having heights of less than 3 nm is 45% or more of the total number of the surface defects on the surface of a semiconductor substrate, and a final polishing step of finish-polishing the semiconductor substrate after the intermediate polishing step.
    Type: Application
    Filed: March 30, 2015
    Publication date: June 22, 2017
    Applicant: Nitta Haas Incorporated
    Inventors: Masashi TERAMOTO, Tatsuya NAKAUCHI, Noriaki SUGITA, Shinichi HABA, Akiko MIYAMOTO
  • Publication number: 20170174939
    Abstract: Proposed is a polishing composition including hydroxyethyl cellulose, water and abrasive grains, wherein the hydroxyethyl cellulose has a molecular weight of 500,000 or more and 1,500,000 or less, and the proportion of the hydroxyethyl cellulose adsorbed to the abrasive grains is 30% or more and 90% or less.
    Type: Application
    Filed: March 20, 2015
    Publication date: June 22, 2017
    Applicant: Nitta Haas Incorporated
    Inventors: Masashi TERAMOTO, Tatsuya NAKAUCHI, Noriaki SUGITA, Shinichi HABA, Akiko MIYAMOTO
  • Publication number: 20170174940
    Abstract: Proposed is a polishing composition including hydroxyethyl cellulose, water and abrasive grains, wherein the hydroxyethyl cellulose has a molecular weight of 500,000 or more and 1,500,000 or less, and the mass ratio of the hydroxyethyl cellulose to the abrasive grains is 0.0075 or more and 0.025 or less.
    Type: Application
    Filed: March 30, 2015
    Publication date: June 22, 2017
    Applicant: Nitta Haas Incorporated
    Inventors: Masashi TERAMOTO, Tatsuya NAKAUCHI, Noriaki SUGITA, Shinichi HABA, Akiko MIYAMOTO