Abstract: A gas laser amplifier includes a housing, discharge electrode pairs, and an optical resonator. The housing includes an entrance window that allows entry of a first laser beam from outside and an exit window that allows exit of the first laser beam amplified. Each of the discharge electrode pairs excites a laser gas supplied between discharge electrodes facing each other in the housing. The optical resonator causes a second laser beam to oscillate with a gain of the excited laser gas in a non-incident state where the first laser beam from outside the housing does not enter the housing through the entrance window. In an incident state where the first laser beam enters the housing through the entrance window, the optical resonator suspends the oscillation of the second laser beam.

Abstract: An electrode pad is provided above a circuit block of a semiconductor integrated circuit device. A junction point A and a junction point B are provided on connection lines connecting electrode pads to an internal circuit and an electrostatic discharge (ESD) protection circuit. The junction point A and the junction point B are positioned at locations closer to the ESD protection circuit than to the electrode pads.

Abstract: An electrode pad is provided above a circuit block of a semiconductor integrated circuit device. A junction point A and a junction point B are provided on connection lines connecting electrode pads to an internal circuit and an electrostatic discharge (ESD) protection circuit. The junction point A and the junction point B are positioned at locations closer to the ESD protection circuit than to the electrode pads.

Abstract: A semiconductor integrated circuit according to the present invention includes an I/O cell, a first PAD connected to the I/O cell, first and second PADs, a package wire which is connected to the first PAD and allows connection between the first PAD and an outside of the semiconductor integrated circuit, and a second package wire which is connected to the second PAD and allows connection between the second PAD and an outside of the semiconductor integrated circuit. A connection point between the first PAD and the fist package wire is located in an area where the I/O cell is placed. A connection point between the second PAD and the second package wire is located outside an area where the I/O cell is placed.

Abstract: An electrode pad is provided above a circuit block of a semiconductor integrated circuit device. A junction point A and a junction point B are provided on connection lines connecting electrode pads to an internal circuit and an electrostatic discharge (ESD) protection circuit. The junction point A and the junction point B are positioned at locations closer to the ESD protection circuit than to the electrode pads.

Abstract: A semiconductor integrated circuit according to the present invention includes an I/O cell, a first PAD connected to the I/O cell, first and second PADs, a package wire which is connected to the first PAD and allows connection between the first PAD and an outside of the semiconductor integrated circuit, and a second package wire which is connected to the second PAD and allows connection between the second PAD and an outside of the semiconductor integrated circuit. A connection point between the first PAD and the fist package wire is located in an area where the I/O cell is placed. A connection point between the second PAD and the second package wire is located outside an area where the I/O cell is placed.

Abstract: The semiconductor integrated circuit of the present invention comprises: a standard cell group including a power supply wiring group or a ground wiring group, which is arranged at an interval based upon a design rule; a connection wiring that is provided in a same layer as the standard cell group for connecting between the power supply wirings or between the ground wirings; a strap wiring that crosses with the connection wiring three-dimensionally; and a connector body for interlayer-connecting the connection wiring and the strap wiring. The connector body has a shape different from that of the power supply wiring or the ground wiring.

Abstract: The semiconductor integrated circuit of the present invention comprises: a standard cell group including a power supply wiring group or a ground wiring group, which is arranged at an interval based upon a design rule; a connection wiring that is provided in a same layer as the standard cell group for connecting between the power supply wirings or between the ground wirings; a strap wiring that crosses with the connection wiring three-dimensionally; and a connector body for interlayer-connecting the connection wiring and the strap wiring. The connector body has a shape different from that of the power supply wiring or the ground wiring.

Abstract: This invention relates to multiphase structured polymer particles comprising at least two rubber component phases (I) formed by copolymerization of monomer mixtures comprising an acrylate ester and a polyfunctional monomer, a thermoplastic resin component phase (II) formed by copolymerization of a monomer mixture comprising a methacrylate ester and other monomers, and satisfying the following conditions (1)-(5). (1) The number average molecular weight of the thermoplastic resin component forming the outermost phase is 30,000 or less. (2) The weight ratio of phase (I)/phase (II) is 30/70-80/20. (3) Of the adjacent phases (1), a specific relation holds regarding the solubility in water of the monomer mixtures forming the nth and n+1th phases. (4) A specific relation holds between the refractive index of phase (I) and the refractive index of phase (II). (5) The average particle size is 150 nm or less.