Abstract: A time series acquisition unit acquires a time series related to power consumption of a machine for a certain time. A classification unit classifies the time series into any one of a plurality of clusters. A process estimation unit estimates a process executed by the machine, based on relationship information indicating a relationship between the plurality of clusters and the process of the machine, and the cluster into which the time series is classified.

Abstract: Provided is a semiconductor epitaxial substrate which has low semiconductor layer mosaicity and is suitable for the production of a semiconductor device. Specifically provided is a semiconductor epitaxial substrate formed by epitaxially growing a graded buffer layer which is compositionally graded such that the lattice constant increases in stages within a range from a first lattice constant to a second lattice constant larger than the first lattice constant, and a semiconductor layer produced from a semiconductor crystal having the second lattice constant on a semiconductor substrate having the first lattice constant. The angle formed by the (mnn) plane (m and n are integers except m=n=0) of the semiconductor layer and the (mnn) plane of the semiconductor substrate is set to +0.05° or more when the direction that rotates clockwise from the [100] direction to the [011] direction is positive.

Abstract: There is provided a dispersion method of stirring a material to be dispersed in a cavity of a container, so as to create a laminar flow of the material by the stirring action, and a dispersing apparatus including a bottom member and a column-shaped rotating shaft that rotates in the cavity of the container, in which the rotating shaft is provided with two vanes attached thereto with a predetermined inclination, at positions circumferentially spaced by 180 degrees, and the vanes are located at non-overlapping positions in an axial direction.

Abstract: There is provided a dispersion method of stirring a material to be dispersed in a cavity of a container, so as to create a laminar flow of the material by the stirring action, and a dispersing apparatus including a bottom member and a column-shaped rotating shaft that rotates in the cavity of the container, in which the rotating shaft is provided with two vanes attached thereto with a predetermined inclination, at positions circumferentially spaced by 180 degrees, and the vanes are located at non-overlapping positions in an axial direction.

Abstract: A flat belt is used for conveying an object on a surface of the flat belt. The flat belt has a tension member and fabric. The tension member is resistant to load in a longitudinal direction of the flat belt. The fabric is disposed on at least one of an inner side and an outer side of the tension member. And, the fabric is stretchable in the longitudinal direction.

Abstract: A flat belt is used for conveying an object on a surface of the flat belt. The flat belt has a tension member and fabric. The tension member is resistant to load in a longitudinal direction of the flat belt. The fabric is disposed on at least one of an inner side and an outer side of the tension member. And, the fabric is stretchable in the longitudinal direction.

Abstract: A flat belt has a longitudinal reinforcement fabric to reinforce the flat belt along the longitudinal direction. A first thermoplastic resin layer is laminated on an upper side of the longitudinal reinforcement fabric. A second thermoplastic resin layer is laminated on a lower side of the longitudinal reinforcement fabric. A first lateral reinforcement fabric is laminated on an upper side of the first thermoplastic resin layer to reinforce the flat belt along the lateral direction. A second lateral reinforcement fabric is laminated on a lower side of the second thermoplastic resin layer to reinforce the flat belt along the lateral direction. A first friction layer is provided above an upper side of the first lateral reinforcement fabric, and is formed with a conveyor surface for conveying a subject.

Abstract: A method for producing a compound semiconductor single crystal, comprises the steps of: using a crucible having a bottom, a cylindrical shape, a diameter increasing portion having a reversed conical shape in a lower end side of the crucible, and a set portion for a seed crystal in a center of the bottom of the diameter increasing portion; setting a seed crystal in the seed crystal set portion of the crucible; putting a raw material of the compound semiconductor and an encapsulating material into the crucible; enclosing the crucible in an inner container; thereafter setting the inner container in a vertical type furnace; heating the raw material and the encapsulating material by a heating means to melt; and solidifying the obtained raw material melt from the seed crystal toward an upper side with annealing the raw material melt from a lower side to grow a single crystal of the compound semiconductor; wherein a rate of crystal growth at the diameter increasing portion of the crucible is made not less than 20 mm

Abstract: In an on-line transaction network, in order to transmit to an administration center the custodial positions of commodities in each terminal transaction device and the contents of the commodities kept in custody thereat, the center is provided with a memory device in which a plurality of commodity patterns specifying the corresponding relations between the custodial positions of the commodities and the contents thereof are stored beforehand along with pattern codes affixed to the commodity patterns, and after the commodity has been put in the terminal transaction device in accordance with any of the commodity patterns, the pattern code indicative of the commodity pattern is sent to the center, whereby information for transaction administration is obtained.