Abstract: A method for manufacturing a forged article, capable of improving the durability of a die for forging is provided. The method, includes forging a steel material, by using a die, by spraying or applying a water-soluble polymer lubricant containing 0.01 to 0.98 mass % of a water-soluble sulfate onto a working surface of the die, the die being made of a raw material having a constituent composition of by mass %, of 0.4 to 0.7% of C, 1.0% or less of Si, 1.0% or less of Mn, 4.0 to 6.0% of Cr, 2.0 to 4.0% of (Mo+½W), 0.5 to 2.5% of (V+Nb), 0 to 1.0% of Ni, 0 to 5.0% of Co, 0.02% or less of N, and a remnant composed of Fe and impurities, and having hardness of 55 to 60 HRC, and the die including a nitrided layer or a nitrosulfidized layer on the working surface thereof.

Abstract: An FM radio receiving apparatus includes a stereo decoder unit 301 for separating a stereo signal of a received FM stereo broadcasting wave into voice signals of individual channels, a binarization processing unit 302 for binarizing the individual voice signals of the channels separated by the stereo decoder unit, and a correlation deciding unit 303 for storing the voice signals of the individual channels binarized by the binarization processing unit 302 for a prescribed time period, and for deciding correlation from the voice signals of the individual channels stored, and the FM radio receiving apparatus controls the degree of separation of the individual channels of the stereo signal in accordance with the correlation decided by the correlation deciding unit 303.

Abstract: After a gate insulating film, a gate electrode and an on-gate protective layer have been formed in this order on an Si substrate, lightly-doped source/drain regions are formed in the substrate. First and second sidewalls are formed on the sides of the gate electrode and then heavily-doped source/drain regions are formed by implanting dopant ions using these sidewalls as a mask. After the second sidewall has been selectively removed, pocket implanted regions are formed and an overall protective film is deposited. Thereafter, an interlevel dielectric film is deposited, contact holes are formed to reach the heavily-doped source/drain regions and then plug electrodes are formed. Since the second sidewall has already been removed when the overall protective film is deposited, the gap between adjacent gate electrodes is not completely filled in.

Abstract: After a gate insulating film, a gate electrode and an on-gate protective layer have been formed in this order on an Si substrate, lightly-doped source/drain regions are formed in the substrate. First and second sidewalls are formed on the sides of the gate electrode and then heavily-doped source/drain regions are formed by implanting dopant ions using these sidewalls as a mask. After the second sidewall has been selectively removed, pocket implanted regions are formed and an overall protective film is deposited. Thereafter, an interlevel dielectric film is deposited, contact holes are formed to reach the heavily-doped source/drain regions and then plug electrodes are formed. Since the second sidewall has already been removed when the overall protective film is deposited, the gap between adjacent gate electrodes is not completely filled in.