Abstract: A transmission circuit for ultrasonic diagnosis includes a delay processing circuit that delays a transmission signal pattern and an operational circuit that calculates a delay time. A transmission timing for supplying the transmission signal pattern to a plurality of piezo electric elements corresponding to a plurality of channels is approximated by a multi-dimensional polynomial with locations of the plurality of piezo electric elements being variables so that the transmission timing becomes linear or arc-like. Coefficients in the multi-dimensional polynomial are supplied to the transmission circuit for ultrasonic diagnosis. The delay time in the delay processing circuit is determined by a first coefficient. The operational circuit calculates the delay time based on a second coefficient.

Abstract: A transmission circuit for ultrasonic diagnosis includes a delay processing circuit that delays a transmission signal pattern and an operational circuit that calculates a delay time. A transmission timing for supplying the transmission signal pattern to a plurality of piezo electric elements corresponding to a plurality of channels is approximated by a multi-dimensional polynomial with locations of the plurality of piezo electric elements being variables so that the transmission timing becomes linear or arc-like. Coefficients in the multi-dimensional polynomial are supplied to the transmission circuit for ultrasonic diagnosis. The delay time in the delay processing circuit is determined by a first coefficient. The operational circuit calculates the delay time based on a second coefficient.

Abstract: A semiconductor integrated circuit device that has a high-voltage analog switch circuit and is operable at a low power-supply voltage, and which has a first high-voltage MOSFET HN1, a second high-voltage MOSFET, and a first floating gate voltage control circuit. The first floating gate voltage control circuit operates at a voltage of 5 V or lower, and when turning on the first high-voltage MOSFET and the second high-voltage MOSFET, the first floating gate voltage control circuit sets a voltage in the source terminal of the first high-voltage MOSFET as a reference voltage, adds a floating voltage corresponding to the power-supply voltage to the reference voltage, and supplies the added voltage to the gate terminals of the first high-voltage MOSFET and the second high-voltage MOSFET.

Abstract: Provided is a semiconductor integrated circuit device that has a high-voltage analog switch circuit and is operable at a low power-supply voltage. The semiconductor integrated circuit device has a high-voltage MOSFET in a semiconductor region arranged on a semiconductor substrate. The semiconductor integrated circuit device includes: a first high-voltage MOSFET HN1; a second high-voltage MOSFET HN2 having a source terminal connected to the source terminal of the first high-voltage MOSFET and a gate terminal connected to the gate terminal of the first high-voltage MOSFET; and a first floating gate voltage control circuit FGC.