Abstract: A semiconductor device according to the invention includes a first Cu interconnect and a first barrier insulating film. a The first barrier insulating film is provided on the first Cu interconnect, and prevents Cu from being diffused from the first Cu interconnect. In addition, the semiconductor device includes a second Cu interconnect and a second barrier insulating film on the first barrier insulating film. The second barrier insulating film is provided on a first Cu interconnect, and prevents Cu from being diffused from the second Cu interconnect. The first and second barrier insulating films are made of a silicon-based insulating film having a branched alkyl group and a carbon-carbon double bond.

Abstract: A film-deposition apparatus and a film-deposition method for forming a manganese film on a surface of an object to be processed by a CVD method are provided. The film-deposition apparatus for forming a manganese film on a surface of an object to be processed by a CVD method (Chemical Vapor Deposition method), the film-deposition apparatus comprises: a process vessel capable of being evacuated; a table on which the object to be processed can be placed, the table being disposed in the process vessel; and a source-gas supply part connected to the process vessel, the source-gas supply part being configured to supply, into the process vessel, a source gas including an organic metal material containing manganese or a metal complex material containing manganese.

Abstract: Provided is a directional solidification casting apparatus capable of heightening a cooling effect when molten material poured in a mold is directionally solidified. A mold (20) disposed around a predetermined area is drawn out from a heating chamber (10) heated above a melting temperature of metals for producing a casting (31), and molten metals (32) held in a cavity (21) of the mold (20) are directionally solidified. The directional solidification casting apparatus (100) comprises a driving rod (42) by which the mold (20) is drawn out from the heating chamber (10), a gas nozzle (52b) through which a cooling gas is jetted from inside a predetermined area where the mold (20) is disposed so as to rapidly cool the mold (20), and a gas nozzle (52a) through which a cooling gas is jetted from outside the predetermined area where the mold (20) is disposed so as to rapidly cool the mold (20). A baffle (15) that does not move even when the driving rod (42) moves up and down is additionally provided.

Abstract: Provided is a directional solidification casting apparatus capable of heightening a cooling effect when molten material poured in a mold is directionally solidified. A mold (20) disposed around a predetermined area is drawn out from a heating chamber (10) heated above a melting temperature of metals for producing a casting (31), and molten metals (32) held in a cavity (21) of the mold (20) are directionally solidified. The directional solidification casting apparatus (100) comprises a driving rod (42) by which the mold (20) is drawn out from the heating chamber (10), a gas nozzle (52b) through which a cooling gas is jetted from inside a predetermined area where the mold (20) is disposed so as to rapidly cool the mold (20), and a gas nozzle (52a) through which a cooling gas is jetted from outside the predetermined area where the mold (20) is disposed so as to rapidly cool the mold (20). A baffle (15) that does not move even when the driving rod (42) moves up and down is additionally provided.

Abstract: A computer assisted system predicting adhesion energy at an interface between dissimilar materials, and an associated adhesiveness includes units for inputting given compositions and crystal structure of the dissimilar materials; like-atom and two unlike-atom interatomic interaction energy parameters on the dissimilar materials; and material interface atomic structure model information into a computer. The computer calculates a material interface total energy relative to a distance between surfaces of the dissimilar materials on the basis of the sum of the two like-atom and two unlike-atom interatomic interaction energies and evaluates the adhesion energy from the distribution of the calculated material interface total energy.