Patents by Inventor Tatsuya Onizuka

Tatsuya Onizuka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7105872
    Abstract: The invention provides a thin film semiconductor element and a method of manufacturing the same to achieve lowering the resistance of gate electrodes, lowering the capacitance of source electrodes, and enhancing etching characteristics. The thin film semiconductor element can include a semiconductor film provided on a substrate, source and drain electrodes connected to the semiconductor film, and a gate electrode provided on the semiconductor film with an insulating film interposed therebetween. The film thickness of the source and drain electrodes can be smaller than the film thickness of the gate electrode.
    Type: Grant
    Filed: June 29, 2004
    Date of Patent: September 12, 2006
    Assignee: Seiko Epson Corporation
    Inventor: Tatsuya Onizuka
  • Publication number: 20050035352
    Abstract: The invention provides a thin film semiconductor element and a method of manufacturing the same to achieve lowering the resistance of gate electrodes, lowering the capacitance of source electrodes, and enhancing etching characteristics. The thin film semiconductor element can include a semiconductor film provided on a substrate, source and drain electrodes connected to the semiconductor film, and a gate electrode provided on the semiconductor film with an insulating film interposed therebetween. The film thickness of the source and drain electrodes can be smaller than the film thickness of the gate electrode.
    Type: Application
    Filed: June 29, 2004
    Publication date: February 17, 2005
    Applicant: SEIKO EPSON CORPORATION
    Inventor: Tatsuya Onizuka