Abstract: A steering control device includes a feedback processing portion configured to control a current flowing through a motor to a current command value; an end determination processing portion configured to determine whether a turning angle of steered wheels has reached a limit angle; and an end-time limit processing portion configured to limit a magnitude of the current command value to a magnitude of a limited current value or smaller, when the end determination processing portion determines that the turning angle has reached the limit angle. The limited current value is a value obtained by performing correction to decrease a magnitude of a detected value of the current flowing through the motor at a time when the end determination processing portion determines that the turning angle has reached the limit angle, based on a degree of a decrease in a magnitude of a rotational speed of the motor.

Abstract: Provided is a method for producing isobutylene with a high selectivity by a dehydration reaction of isobutanol. There are provided a method for producing isobutylene by dehydration of isobutanol, in which the dehydration of isobutanol is performed in a state where at least one of an organic acid and an organic acid ester is present in a reaction system, and methods for producing methacrylic acid and methyl methacrylate from the obtained isobutylene.

Abstract: Provided are a barium titanate-based piezoelectric ceramics having satisfactory piezoelectric performance and a satisfactory mechanical quality factor (Qm), and a piezoelectric element using the same. Specifically provided are a piezoelectric ceramics, including: crystal particles; and a grain boundary between the crystal particles, in which the crystal particles each include barium titanate having a perovskite-type structure and manganese at 0.04% by mass or more and 0.20% by mass or less in terms of a metal with respect to the barium titanate, and the grain boundary includes at least one compound selected from the group consisting of Ba4Ti12O27 and Ba6Ti17O40, and a piezoelectric element using the same.

Abstract: A photoelectric conversion apparatus includes a semiconductor substrate including recessed portions and insulators disposed on the respective recessed portions. The semiconductor substrate includes a first-conductivity-type first semiconductor region, a second-conductivity-type second semiconductor region that is of a conductivity type different from the first-conductivity-type and that is formed in the first semiconductor region, a second-conductivity-type third semiconductor region in contact with the second semiconductor region on a surface of the semiconductor substrate, and a first-conductivity-type fourth semiconductor region that includes the recessed portions. The second semiconductor region and the third semiconductor region are surrounded by the fourth semiconductor region on the surface of the semiconductor substrate. The insulators on the recessed portions extend through the fourth semiconductor region and are in contact with the first semiconductor region.

Abstract: A photoelectric conversion apparatus includes a semiconductor substrate having one principle surface including recessed portions, and insulation bodies in the recessed portions. The semiconductor substrate includes photoelectric conversion elements each of which includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the second conductivity type which has at least a portion disposed nearer to the principle surface relative to the second semiconductor region. The second semiconductor region has a polarity of signal charge. The second semiconductor region is in contact with the first and third semiconductor regions. Signal charge paths are disposed between the recessed portions in a cross section perpendicular to the principle surface. At least one of the second and third semiconductor regions is positioned in directions of at least two of the signal charge paths.

Abstract: A control apparatus comprising a processor, a memory, and a communication circuit configured to communicate with an input apparatus is provided.

Abstract: When switching the combustion mode from a stoichiometric mode to a homogeneous lean mode, a controller starts switching of the combustion mode after switching of the opening angle of a tumble control valve is started. When a target operating point of an internal combustion engine lies outside a predetermined operational region that is set in a range that excludes at least a low intake load factor region and includes at least a medium intake load factor and medium engine speed region, the controller sets the waiting time from the start of switching of the opening angle of the tumble control valve to the start of switching of the combustion mode to be longer than when the target operating point lies in the predetermined operational region.

Abstract: To provide a program, an information storage medium, an image processing device, an image processing method, and a data structure capable of collaboration between replay data and a motion picture produced by an image capturing unit during a period corresponding to the replay data. A replay data obtaining unit obtains replay data for reproducing the status of execution of a program. A captured motion picture obtaining unit obtains a captured motion picture that is produced by the image capturing unit during an image capturing period including at least a part of a reproduction period in which the status of execution of the program is reproduced based on replay data. A data holding unit holds replay data and a captured motion picture so as to be correlated to each other.

Abstract: A radiation imaging system includes a radiation imaging apparatus which detects radiation transmitted through an object and obtains a radiation image, and a control apparatus which controls the radiation imaging apparatus. The radiation imaging system comprises: an abnormality information obtaining unit configured to obtain abnormality information indicating an abnormality occurring in the radiation imaging apparatus; and an examination information obtaining unit configured to obtain, from examination information stored in the control apparatus, examination information corresponding to the abnormality information.

Abstract: An information processing apparatus for generating a projection pattern used in three-dimensional measurement of a target object, comprising: determination means for determining a projection code string for generating the projection pattern based on distance information of the target object which is obtained in advance; and generation means for generating a pattern image of the projection pattern based on a projection code string determined by the determination means.

Abstract: A control apparatus comprising a processor, a memory, and a communication circuit configured to communicate with an input apparatus is provided.

Abstract: A surgical treatment apparatus includes a treatment portion unit; at least one operation portion provided in the treatment portion unit that is movable in response to an operation of an operator; a detection subject portion provided in the operation portion; a gripping portion that is detachable and attachable relative to the treatment portion unit; a non-contact type detection portion that is provided in the gripping portion separately from the operation portion and is capable of detecting an operation of the detection subject portion in accordance with the operation of the operation portion; an energy supply portion provided within the gripping portion, that supplies energy to the treatment portion; and a driving device connected to the gripping portion, that supplies energy to the energy supply portion in accordance with a detection result of the detection portion.

Abstract: A front wheel supporting frame structure of a saddle-ride vehicle includes a main frame, upper and lower arms and a lower frame. The main frame has a front portion and a rear portion. The main frame includes an upper connection portion, a lower connection portion, and an extending portion. The extending portion extends downward. The upper arm has an upper front end portion and an upper rear end portion. The upper rear end portion is movably connected to the upper connection portion. The lower arm has a lower front end portion and a lower rear end portion. The lower rear end portion of is movably connected to the lower connection portion. The lower frame includes a bottom portion and an upright portion. The bottom portion extends in the vehicle front-rear direction. The upright portion has a top portion connected to the extending portion.

Abstract: A resist mask 40, having penetrating holes 41, is formed on a rear surface of a silicon substrate 2. A planar shape of each penetrating hole 41 is formed to a shape with which its respective sides are curved to inwardly convex arcuate shapes with respect to a regular quadrilateral that is a target shape of a transverse section at a processing ending end side of a corresponding cavity 3. Next, dry etching is applied to the silicon substrate 2. The cavities 3 are thereby formed in the silicon substrate 2. As the etching progresses, a transverse sectional shape of each cavity 3 decreases in inward projection amounts of the respective arcuate shaped sides in the transverse sectional shape of the corresponding penetrating hole 41 of the resist mask 40. At a processing ending end side of the cavity 3, its planar shape is substantially the same shape as the regular quadrilateral that is the target shape.

Abstract: Disclosed is a substrate cleaning method. In this substrate cleaning method, a step (step 10) is performed wherein a removal target film and located above a processing target film is patterned; after step 10, a step (step 11) is performed wherein the patterned removal target film is used as an etching mask to perform anisotropic etching on the processing target film; after step 11, a step (step 12) is performed wherein the remaining removal target film on the processing target film is subjected to gas chemical etching; and after step 12, a step (step 14) is performed wherein a target substrate, which includes the surface of the processing target film, is irradiated with gas clusters, thereby cleaning the surface of the processing target film by removing non-reactive or non-volatile residues remaining on the surface of the processing target film.

Abstract: A resist mask 40, having penetrating holes 41, is formed on a rear surface of a silicon substrate 2. A planar shape of each penetrating hole 41 is formed to a shape with which its respective sides are curved to inwardly convex arcuate shapes with respect to a regular quadrilateral that is a target shape of a transverse section at a processing ending end side of a corresponding cavity 3. Next, dry etching is applied to the silicon substrate 2. The cavities 3 are thereby formed in the silicon substrate 2. As the etching progresses, a transverse sectional shape of each cavity 3 decreases in inward projection amounts of the respective arcuate shaped sides in the transverse sectional shape of the corresponding penetrating hole 41 of the resist mask 40. At a processing ending end side of the cavity 3, its planar shape is substantially the same shape as the regular quadrilateral that is the target shape.

Abstract: A piezoelectric ceramic includes: a metal oxide represented by General Formula (1); and 0.04 parts by weight or more and 0.36 parts by weight or less of Mn and 0.042 parts by weight or more and 0.850 parts by weight or less of Bi on a metal basis relative to 100 parts by weight of the metal oxide, wherein the piezoelectric ceramic includes a plurality of first crystal grains having a perovskite structure, and a plurality of second crystal grains provided at a grain boundary between the first crystal grains and having a crystal structure different from that of the first crystal grain, and the second crystal grain mainly contains at least one metal oxide selected from Ba4Ti12O27 and Ba6Ti17O40. (Ba1-xCax)a(Ti1-yZry)O3??(1) (where 0.09?x?0.30, 0.025?y?0.085, 0.986?a?1.

Abstract: Provided is a PSA sheet having a PSA layer. The PSA sheet has a first face and a second face. The first face is a first adhesive face formed of one surface of the PSA layer. The first adhesive face has a 10-point mean roughness of 1000 nm or less. The PSA layer has a storage modulus of 0.08 MPa or greater at 100° C.

Abstract: Provided is a method for producing isobutylene with a high selectivity by a dehydration reaction of isobutanol. There are provided a method for producing isobutylene by dehydration of isobutanol, in which the dehydration of isobutanol is performed in a state where at least one of an organic acid and an organic acid ester is present in a reaction system, and methods for producing methacrylic acid and methyl methacrylate from the obtained isobutylene.

Abstract: An image forming apparatus includes: a supporting member supporting multiple cartridges and movable between an inside position inside an apparatus main body and an outside position, in which the cartridges are supported arrayed in a direction of extracting the supporting member from the inside position to the outside position, with the multiple cartridges being detachably attachable at the outside position; a first cartridge; a second cartridge adjacent to the first cartridge; and a third cartridge adjacent to the second cartridge. The first cartridge has a greater protrusion amount from the supporting member compared to the second cartridge and the third cartridge, in a direction orthogonal to the extracting direction and to a longitudinal direction of the cartridges. When viewed from the orthogonal direction, the amount of overlapping between the first cartridge and the second cartridge is greater than the amount of overlapping between the second cartridge and the third cartridge.