Abstract: A signal processor for reducing power consumption. The signal processor includes a signal processing circuit and a first regulator connected to the signal processing circuit. The first regulator receives an external regulated voltage from an external regulator connected to the signal processor and generates an internal regulated voltage that is in accordance with an output level of a CCD image sensor. The signal processing circuit operates with the internal regulated voltage and performs a predetermined signal processing on an image signal generated by the CCD image sensor.

Abstract: An imaging apparatus for reducing power consumption. The apparatus includes a first regulator connected to a signal processing circuit and a second regulator connected to an output circuit. The first regulator generates a first regulated voltage that is in accordance with an output level of a solid-state image sensor. The second regulator generates a second regulated voltage that is in accordance with an input level of an external device.

Abstract: Provided is a fluorescent lamp electrode, having excellent sputtering resistance and able to retain excellent dark-start characteristics over a long period of time when used as an electrode in a cold cathode fluorescent lamp, and which can be produced inexpensively. A fluorescent lamp of this invention has a prolonged life resulting from the use of said electrode. Said electrode is made by dispersing in a nickel or nickel alloy base one or more rare earth metals selected from among lanthanum, cerium, yttrium, samarium, praseodymium, niobium, europium and gadolinium in the form of a precipitated boride phase.

Abstract: An object is to improve characteristics of a power storage device. The present invention relates to an electricity storage device comprising a current collector and a negative electrode-active material layer formed over the current collector. The negative electrode-active material layer includes a negative electrode comprising a first negative electrode layer in contact with the current collector; a second negative electrode layer in contact with the first negative electrode layer, having a smaller capacitance than the first negative electrode layer and containing one material selected from a nitride of lithium and a transition metal represented by LiaMbNz (M is a transition metal, 0.1?a?2.8, 0.2?b?1 and 0.6?z?1.4), a silicon material, and lithium titanate; a positive electrode that is paired with the negative electrode; and a solid electrolyte interposed between the positive electrode and the negative electrode.

Abstract: A projection unit projects a predetermined image onto a projection plane through a lens. An image generating unit generates the predetermined image which is to be projected from the projection unit. A code generator generates a notifying image that contains information to be conveyed to another projector provided with an image pickup function. The projection unit projects the notifying image generated by the code generator and has the another projector capture the notifying image so as to convey the information to the another projector.

Abstract: An object is to improve characteristics of a power storage device and achieve a long lifetime. In the case where a lithium nitride is used for a negative electrode active material of a power storage device, a plurality of lithium nitride layers with different lithium concentrations are stacked. For example, in the case where a first lithium nitride layer and a second lithium nitride layer are stacked over a current collector, lithium is contained in the first lithium nitride layer at a lower concentration than lithium contained in the second lithium nitride layer. In this case, a concentration of a transition metal of the first lithium nitride layer is higher than a concentration of the transition metal of the second lithium nitride layer. Note that another alkali metal may be used instead of lithium.

Abstract: The semiconductor device includes a driver circuit including a first thin film transistor and a pixel including a second thin film transistor over one substrate. The first thin film transistor includes a first gate electrode layer, a gate insulating layer, a first oxide semiconductor layer, a first oxide conductive layer, a second oxide conductive layer, an oxide insulating layer which is in contact with part of the first oxide semiconductor layer and which is in contact with peripheries and side surfaces of the first and second oxide conductive layers, a first source electrode layer, and a first drain electrode layer. The second thin film transistor includes a second gate electrode layer, a second oxide semiconductor layer, and a second source electrode layer and a second drain electrode layer each formed using a light-transmitting material.

Abstract: An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.

Abstract: A safe method of manufacturing an electrode of a power storage device even when an alkali metal is used in forming the electrode. A negative electrode is manufactured by forming an alkali metal ion insertion/extraction layer which is a layer capable of alkali metal ion insertion and extraction on a surface of a current collector, forming an alkali metal film under reduced pressure on a surface of the alkali metal ion insertion/extraction layer, ionizing the alkali metal film, and impregnating the alkali metal ion insertion/extraction layer with the ionized alkali metal.

Abstract: A subject for the invention is to diminish the occurrence of streak-type segregation in producing a material comprising a Ni-based superalloy. The invention relates to a Ni-based superalloy having excellent unsusceptibility to segregation, characterized by comprising: 0.005 to 0.15 mass % of C; 8 to 22 mass % of Cr; 5 to 30 mass % of Co; equal to or greater than 1 and less than 9 mass % of Mo; 5 to 21 mass % of W; 0.1 to 2.0 mass % of Al; 0.3 to 2.5 mass % of Ti; up to 0.015 mass % of B; and up to 0.01 mass % of Mg, with the remainder comprising Ni and unavoidable impurities.

Abstract: An image signal is input to two LPFs having different transmission characteristics. A selector chooses one of outputs of the respective LPFs and delivers the chosen output to a gamma correction circuit. The switching of the selector is controlled by a filter control circuit. In the filter control circuit, a comparator compares an exposure time E of a current frame with a threshold value R. The selector is controlled so as to select an output of one of the LPFs that has a lower cutoff frequency and a greater noise component elimination effect than the other LPF does if the exposure time E is longer than or equal to the threshold value R.

Abstract: There is provided a cold cathode fluorescent lamp that has excellent sputtering resistance and long life, even if high tube current is applied, and can be easily manufactured at low cost. In a cold cathode fluorescent lamp comprising a transparent tube having a fluorescent layer provided on an inner wall surface, containing a rare gas and mercury inside, and having both ends enclosed by sealing members, electrodes provided near both ends inside the transparent tube, and lead wires connected to the electrodes and provided through the sealing members, the electrode contains nickel as a main component and contains cerium metal or cerium oxide.

Abstract: Regarding predetermined positioning criteria (M1, M2), ((G1, G2), (N1, or N2), (K1, K2)), there is provided image processing means (40B) for obtaining by image processing, measured values (CD1, CD2) ((GD1, GD2), (ND1, or ND2), (KD1, KD2)) and reference values (CR1, CR2) ((GR1, GR2), (NR1, or NR2), (KR1, KR2)), and for moving a work (W) in a manner that the measured values (CD1, CD2) ((GD1, GD2), (ND1, or ND2), (KD1, KD2)) and the reference values (CR1, CR2) ((GR1, GR2), (NR1, or NR2), (KR1, KR2)) coincide with each other, thereby positioning the work (W) at a predetermined position.

Abstract: Under the control of a controller, a DSP supplies audio signals received from a switch circuit to a main zone DAC, subjects the audio signals received from the aforementioned switch circuit (i.e., audio signals for main zone use) to down-mixing processing so that the number of channels matches the number of output terminals assigned to each zone, and respectively supplies the audio signals subjected to down-mixing processing to the respective switch circuits of each zone. Each of the aforementioned switch circuits supplies the audio signals received from the subzone DAC to the respective volume adjustor of each zone.

Abstract: Regarding predetermined positioning criteria (M1, M2), ((G1, G2), (N1, or N2), (K1, K2)), there is provided image processing means (40B) for obtaining by image processing, measured values (CD1, CD2) ((GD1, GD2), (ND1, or ND2), (KD1, KD2)) and reference values (CR1, CR2) ((GR1, GR2), (NR1, or NR2), (KR1, KR2)), and for moving a work (W) in a manner that the measured values (CD1, CD2) ((GD1, GD2), (ND1, or ND2), (KD1, KD2)) and the reference values (CR1, CR2) ((GR1, GR2), (NR1, or NR2), (KR1, KR2)) coincide with each other, thereby positioning the work (W) at a predetermined position.

Abstract: A lens driving control apparatus comprising: a lens unit including a lens and a lens barrel in which the lens is incorporated; a frame configured to support the lens unit through springs such that the lens unit moves in a movable range in the optical axis direction; a voice coil motor including a driving coil to drive the lens unit in the optical axis direction; a motor driver configured to supply a driving current to the driving coil; and a driver controlling circuit configured to control the motor driver such that a standby time period to suppress vibration of the lens unit is set every time the lens unit moves a distance as a unit, which distance is obtained by dividing the movable range by a predetermined number.

Abstract: An audio-video apparatus, which is connectable to a plurality of external devices (e.g., DVD players, TV monitors, and game devices) so as to process input signals thereof and to thereby control them individually, stores a plurality of packaged information regarding setups and operations, i.e., a plurality of scene templates, which are assigned to a plurality of scene buttons in advance. When the user presses a desired scene button, the corresponding scene template is called and read out so as to automatically realize prescribed setup and operation in connection with a desired external device. The audio-video apparatus allows the user to edit and customize scene templates assigned to the scene buttons in association with messages indicating details of scene templates, which are visually displayed on the screen.

Abstract: An Ni—Fe based superalloy forging material including 30 to 40 wt % of Fe, 14 to 16 wt % of Cr, 1.2 to 1.7 wt % of Ti, 1.1 to 1.5 wt % of Al, 1.9 to 2.7 wt % of Nb, 0.05 wt % or less of C and the remainder of Ni and inevitable impurities is solution-treated and aged, and thereby ?? phase (Ni3Al) having an initial mean particle size of about 50 to about 100 nm is precipitated. This superalloy is excellent in high-temperature strength and high-temperature ductility and can produce a large forged product of 10 ton or more. Therefore, this material is suitable for use as the material of a steam turbine rotor having a main steam temperature of 650° C. or more.

Abstract: A signal processor for reducing power consumption. The signal processor includes a signal processing circuit and a first regulator connected to the signal processing circuit. The first regulator receives an external regulated voltage from an external regulator connected to the signal processor and generates an internal regulated voltage that is in accordance with an output level of a CCD image sensor. The signal processing circuit operates with the internal regulated voltage and performs a predetermined signal processing on an image signal generated by the CCD image sensor.

Abstract: A signal processor for reducing power consumption. The signal processor includes a signal processing circuit and a first regulator connected to the signal processing circuit. The first regulator receives an external regulated voltage from an external regulator connected to the signal processor and generates an internal regulated voltage that is in accordance with an output level of a CCD image sensor. The signal processing circuit operates with the internal regulated voltage and performs a predetermined signal processing on an image signal generated by the CCD image sensor.