Abstract: A frequency detector detects a system frequency from an AC voltage on an AC power line to which a power conditioner performing system interconnection of a distributed power supply is connected. A power converter is configured to inject lead reactive power or delay reactive power into the AC power line. A controller controls reactive power output from the power converter to output the lead reactive power in response to an increase in the system frequency while outputting the delay reactive power in response to a decrease in the system frequency.

Abstract: A vibration generation device includes: a base configured to transmit vibration to an object; a pendulum supported by the base swingably around a rotation axis; and a driving unit including a magnet, and a coil disposed to face the magnet in a non-contact manner, and configured to swing the pendulum. One member of the magnet and the coil is provided at a position on the pendulum away from the rotation axis. The base includes a support portion supporting the pendulum swingably around the rotation axis. A part of an extension surface of a facing surface of the support portion facing the pendulum is included in a swingable range of the pendulum. The support portion is provided outside the swingable range of the pendulum when viewed along the rotation axis.

Abstract: An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.

Abstract: Objective of the present invention is to provide a novel monoclonal antibody against Nav1.7. The present invention discloses a monoclonal antibody against Nav1.7 or its antibody fragment, having specific six CDRs (CDR1 to CDR3 of a heavy chain and CDR1 to CDR3 of a light chain) or specific heavy/light chain variable regions. The monoclonal antibody and the like can be used for treating or preventing pain, pruritus and so on.

Abstract: A method for producing a metal composite hydroxide, which includes a first crystallization process of obtaining first metal composite hydroxide particles by supplying a first raw material aqueous solution containing a metal element and an ammonium ion donor to a reaction tank, adjusting a pH of a reaction aqueous solution in the reaction tank, and performing a crystallization reaction and a second crystallization process of forming a tungsten-concentrated layer on a surface of the first metal composite hydroxide particles and obtaining second metal composite hydroxide particles by supplying a second raw material aqueous solution containing a metal element and a more amount of tungsten than the first raw material aqueous solution and an ammonium ion donor to a reaction aqueous solution containing the first metal composite hydroxide particles, adjusting a pH of the reaction aqueous solution, and performing a crystallization reaction, and the like.

Abstract: A light source device comprising: a light source section which generates any one of blue light, red light, and green light; a phosphor which generates a fluorescence including the two colors other than the color of the light emitted from the light source section; a color-changing section which changes one of the two colors of the fluorescence emitted from the phosphor to another color regularly and irradiates it to the image-forming element; and a light path-switching section which switches a light path in which a fluorescence excited by the color light emitted from the light source section passes towards the color-changing section and a light path in which the color light emitted from the light source section passes towards the image-forming element regularly.

Abstract: A light source optical system includes a wavelength conversion unit configured to receive first color light emitted from by an excitation light source and emit second color light with a wavelength different from a wavelength of the first color light; and a first optical system and a second optical system provided in an optical path between the excitation light source and the wavelength conversion unit. The first optical system includes one optical element having a negative power, wherein the second optical system as a whole has a positive power, and wherein Conditional Expression (1) is satisfied as follows: 1.8<|Fn/F2|<5.0,??(1) where Fn is a focal length for a d-line of the optical element having the negative power of the first optical system, and F2 is a focal length for the d-line of the second optical system.

Abstract: An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.

Abstract: Disclosed is a novel anti-CCR8 antibody. The antibody can be used for treating or preventing cancers or the like.

Abstract: A power converter that performs power conversion between a DC line and an AC system includes a power conversion circuit including a plurality of submodules connected in series with each other, and a controller to control each of the plurality of submodules. Each submodule includes a switching circuit and a capacitor connected in parallel with the switching circuit. When a circuit breaker provided between the AC system and the power conversion circuit is opened, the controller drives the switching circuit of at least one submodule of the plurality of submodules such that the capacitor of the at least one submodule is discharged via a discharge circuit connected to the DC line.

Abstract: Provided are: a nonaqueous electrolyte secondary battery positive electrode active material that has high crystallinity, that causes less amount of Mn deposition on a negative electrode, and that can form a secondary battery having excellent cycle characteristics; and a nonaqueous electrolyte secondary battery using the nonaqueous electrolyte secondary battery positive electrode active material. The nonaqueous electrolyte secondary battery positive electrode active material according to the present invention is formed of a lithium-manganese-nickel complex oxide including a spinel-type crystal structure, wherein the lithium-manganese-nickel complex oxide has a crystallite diameter not smaller than 1000 ? and is formed of primary particles that have a polyhedron shape having more than eight surfaces. The proportion of ungrown particles not having the polyhedron shape of the primary particles in the lithium-manganese-nickel complex oxide is preferably not higher than 5%.

Abstract: An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.

Abstract: A power conversion device according to one embodiment includes a plurality of submodules connected in series to each other. In each submodule, a first terminal, a second terminal and a third terminal are provided on or provided to protrude from a surface of a package. A first semiconductor switching element is built into the package and connected between the first terminal and the second terminal. A second semiconductor switching element is built into the package and connected between the second terminal and the third terminal. A DC capacitor is built into the package and connected between the first terminal and the third terminal.

Abstract: Objective of the present invention is to provide a novel monoclonal antibody against Nav1.7. The present invention discloses a monoclonal antibody against Nav1.7 or its antibody fragment, having specific six CDRs (CDR1 to CDR3 of a heavy chain and CDR1 to CDR3 of a light chain) or specific heavy/light chain variable regions. The monoclonal antibody and the like can be used for treating or preventing pain, pruritus and so on.

Abstract: A light source optical system includes a wavelength conversion unit configured to receive first color light emitted from by an excitation light source and emit second color light with a wavelength different from a wavelength of the first color light; and a first optical system and a second optical system provided in an optical path between the excitation light source and the wavelength conversion unit. The first optical system includes one optical element having a negative power, wherein the second optical system as a whole has a positive power, and wherein Conditional Expression (1) is satisfied as follows: 1.8<|Fn/F2|<5.0,??(1) where Fn is a focal length for a d-line of the optical element having the negative power of the first optical system, and F2 is a focal length for the d-line of the second optical system.

Abstract: Provided is an n-type GaN crystal, in which a donor impurity contained at the highest concentration is Ge, and which has a room-temperature resistivity of lower than 0.03 ?·cm and a (004) XRD rocking curve FWHM of less than 20 arcsec. The n-type GaN crystal has two main surfaces, each having an area of 2 cm2 or larger. One of the two main surfaces can have a Ga polarity and can be inclined at an angle of 0° to 10° with respect to a (0001) crystal plane. Further, the n-type GaN crystal can have a diameter of 20 mm or larger.

Abstract: A power conversion device includes a plurality of cascaded converter cells. In each of the converter cells, each of a plurality of arms forming a bridge circuit is provided with a plurality of semiconductor switching elements in parallel. A drive controller of each of the converter cells is configured to, when none of a plurality of predetermined abnormality modes is detected, control the bridge circuit in accordance with an externally provided command. The drive controller is configured to, when at least one of the plurality of abnormality modes is detected, turn on all semiconductor switching elements provided in at least one of the plurality of arms forming the bridge circuit, to thereby establish a short circuit between first and second input/output nodes.

Abstract: A power conversion device includes a plurality of cascaded converter cells. In each of the converter cells, each of a plurality of arms forming a bridge circuit is provided with a plurality of semiconductor switching elements in parallel. A drive controller of each of the converter cells is configured to, when none of a plurality of predetermined abnormality modes is detected, control the bridge circuit in accordance with an externally provided command. The drive controller is configured to, when at least one of the plurality of abnormality modes is detected, turn on all semiconductor switching elements provided in at least one of the plurality of arms forming the bridge circuit, to thereby establish a short circuit between first and second input/output nodes.

Abstract: A light source optical system includes a wavelength conversion unit configured to receive first color light emitted from by an excitation light source and emit second color light with a wavelength different from a wavelength of the first color light; and a first optical system and a second optical system provided in an optical path between the excitation light source and the wavelength conversion unit. The first optical system includes one optical element having a negative power, wherein the second optical system as a whole has a positive power, and wherein Conditional Expression (1) is satisfied as follows: 1.8<|Fn/F2|<5.0,??(1) where Fn is a focal length for a d-line of the optical element having the negative power of the first optical system, and F2 is a focal length for the d-line of the second optical system.

Abstract: A light-source device includes an excitation light source; an optical element having a reflecting surface to reflect first colored light emitted from the excitation light source; and a wavelength conversion unit including a waveform conversion member configured to convert at least a portion of the first colored light reflected by the optical element and incident on the wavelength conversion unit, into second colored light having a wavelength different from a wavelength of the first colored light and emit the second colored light. A point P does not intersect with a light flux Q where the point P is a center of the first colored light on the reflecting surface of the optical element and the light flux Q is a light flux of the first colored light emitted from the wavelength conversion unit.