Abstract: After patterning employing photolithographic and/or other such technique(s) following resist film formation, small amount(s) of surface(s) at exposed portion(s) of crystal(s) 1 is or are at least partially removed therefrom by etching as a result of immersion in etchant(s). Metal film(s) is/are thereafter formed over surface(s) of exposed crystal(s) 1 and over photoresist remaining following etching operation(s), and photoresist remaining following etching operation(s) is then removed so as to cause metal film(s) to remain only at surface(s) of crystal(s) 1 exposed at patterning operation(s).

Abstract: On a surface of a GaAs substrate, layers to be a top cell are formed by epitaxial growth. On the top cell, layers to be a bottom cell are formed. Thereafter, on a surface of the bottom cell, a back surface electrode is formed. Thereafter, a glass plate is adhered to the back surface electrode by wax. Then, the GaAs substrate supported by the glass plate is dipped in an alkali solution, whereby the GaAs substrate is removed. Thereafter, a surface electrode is formed on the top cell. Finally the glass plate is separated from the back surface electrode. In this manner, a compound solar battery that improves efficiency of conversion to electric energy can be obtained.

Abstract: In an InGaP/InGaAs/Ge triple-junction solar cell, efficiency of a multijunction solar cell is improved by adjusting a ratio of an Al composition in an (Al)InGaP cell. According to a current-matching method in a multijunction solar cell, the ratio of the Al composition in an AlInGaP material for a top cell is adjusted in order to achieve matching between photocurrents generated in the top cell and a middle cell in the multijunction solar cell. Here, the multijunction solar cell uses as the top cell a solar cell-formed with the AlInGaP material and having a PN junction, uses as a middle cell a solar cell lattice-matched to the top cell, formed with an (In)GaAs(N) material and having a PN junction, and uses as a bottom cell a solar cell lattice-matched to the middle cell, formed with a Ge material and having a PN junction.

Abstract: A group III-V solar cell with GaAs as the main component, superior in radiation resistance, is provided. In a GaAs-based group III-V multijunction type solar cell, the group III-V solar cell is formed of an n type emitter layer and a p type base layer. The optical bandgap of the material forming the p type base layer becomes smaller as a function of approaching the pn junction. The group III-V solar cell has stacked a plurality of solar cells differing in optical bandgap. A group III-V solar cell formed of an n type emitter layer and a p type base layer with GaAs as the main component is stacked. The optical bandgap of the p type base layer becomes smaller as a function of approaching the pn junction.

Abstract: A solar cell comprises at least a germanium (Ge) substrate, buffer layers formed on the germanium substrate, a first InxGa1-xAs layer of first conductivity type formed on the buffer layers, and a second InxGa1-xAs layer of second conductivity type formed on the first InxGa1-xAs layer to form pn junction. Because the composition x of In contained in the first InxGa1-xAs layer and the second InxGa1-xAs layer is in a range of 0.005≦x≦0.015, the inexpensive and high conversion efficiency solar cell can be achieved.

Abstract: The present invention is directed to a method of manufacturing a photovoltaic cell with high conversion efficiency, wherein a polycrystal CdTe layer with a large grain size can be formed by forming an indium oxide film (20) on a transparent conductive substrate having a transparent conductive film (2) as its surface layer, then forming an n-type CdS layer (3) and a p-type CdTe layer (4) thereon, then attaching cadmium chloride (CdCl.sub.2) on the p-type CdTe layer, and then annealing. The indium oxide film (20) is capable of relaxing strain caused at an interface between the transparent conductive film (2) and the n-type CdS layer (3), so that a good CdS/CdTe junction interface can be formed. The indium oxide film (20) can be formed by forming an indium film on the transparent conductive substrate and then annealing in oxygen containing atmosphere.