Abstract: A manufacturing method of a substrate, the method includes a crack forming process of forming a crack along an interface between a first portion of a processing object and a second portion of the processing object, the crack-forming process forming the crack in a manner that an ultrashort-pulse laser light is irradiated so that a focus point thereof is positioned at the interface or in a vicinity thereof, and a separating process of separating the processing object at the crack, wherein an impurity concentration of the first portion and an impurity concentration of the second portion are different from each other or material of the first portion and material of the second portion are different from each other.

Abstract: An imaging apparatus includes a first detector configured to detect an elapsed time after starting to shoot an image in a specific shooting mode for shooting the image by moving the imaging apparatus in a predetermined shooting direction, a second detector configured to detect amount of movement of the imaging apparatus, and a controller configured to control display of a display unit to display, in the specific shooting mode, a first indicator fixedly positioned on the display unit and a second indicator movably positioned on the display unit. The controller decides a first amount of movement in the predetermined shooting direction according to the detected elapsed time and a second amount of movement in an opposite direction according to the detected amount of movement of the imaging apparatus, and controls a display position of the second indicator based on the first and second amounts of movement.

Abstract: A substrate includes a base substrate including a processed portion processed by irradiation with an ultrashort-pulse laser light and an unprocessed portion which is not irradiated with the ultrashort-pulse laser light, the processed portion and the unprocessed portion are on a surface of the base substrate, and a semiconductor crystal layer crystal-grown at least on the unprocessed portion of the base substrate.

Abstract: A substrate includes a base substrate including a processed portion processed by irradiation with an ultrashort-pulse laser light and an unprocessed portion which is not irradiated with the ultrashort-pulse laser light, the processed portion and the unprocessed portion are on a surface of the base substrate, and a semiconductor crystal layer crystal-grown at least on the unprocessed portion of the base substrate.

Abstract: A manufacturing method of a substrate, the method includes a crack forming process of forming a crack along an interface between a first portion of a processing object and a second portion of the processing object, the crack-forming process forming the crack in a manner that an ultrashort-pulse laser light is irradiated so that a focus point thereof is positioned at the interface or in a vicinity thereof, and a separating process of separating the processing object at the crack, wherein an impurity concentration of the first portion and an impurity concentration of the second portion are different from each other or material of the first portion and material of the second portion are different from each other.

Abstract: The present invention aims at providing a semiconductor device having a conductive film formed on a semiconducting substrate so that heating of the substrate and contamination by impurities can be suppressed and Schottky resistance can be reduced, and at providing a method of manufacturing the same. The metal film formation method used in manufacturing the semiconductor device according to an embodiment of the present invention includes the steps of: irradiating one surface of the substrate with a femtosecond laser having energy in the vicinity of the processing threshold value to form a nano-periodic structure in the form of minute irregularities; and forming a metal film on the nano-periodic structure of the substrate. It is thereby possible to reduce the Schottky resistance at the interface between the substrate and the metal film and obtain an ohmic contact while suppressing heating of the substrate and contamination by impurities.

Abstract: An imaging apparatus includes a first detector configured to detect an elapsed time after starting to shoot an image in a specific shooting mode for shooting the image by moving the imaging apparatus in a predetermined shooting direction, a second detector configured to detect amount of movement of the imaging apparatus, and a controller configured to control display of a display unit to display, in the specific shooting mode, a first indicator fixedly positioned on the display unit and a second indicator movably positioned on the display unit. The controller decides a first amount of movement in the predetermined shooting direction according to the detected elapsed time and a second amount of movement in an opposite direction according to the detected amount of movement of the imaging apparatus, and controls a display position of the second indicator based on the first and second amounts of movement.

Abstract: A terahertz wave radiating element includes: a first nitride semiconductor layer formed on a substrate; a second nitride semiconductor layer formed over the first nitride semiconductor layer, and having a wider bandgap than the first nitride semiconductor layer; and source, gate, and drain electrodes formed on the second nitride semiconductor layer. The source electrode is formed by a plurality of source electrode fingers that are arranged periodically, and the drain electrode is formed by a plurality of drain electrode fingers that are arranged periodically.

Abstract: An optical transmission/reception device includes at least one light emitting portion and at least one light receiving portion on the same substrate. The light emitting portion includes at least a lower multilayer reflector and an active layer provided on the lower multilayer reflector. A metal layer including a plurality of opening portions is provided in an upper portion of the light emitting portion. Each of the opening portions has a size smaller than a light emission wavelength of the light emitting portion.

Abstract: A terahertz wave radiating element includes: a first nitride semiconductor layer formed on a substrate; a second nitride semiconductor layer formed over the first nitride semiconductor layer, and having a wider bandgap than the first nitride semiconductor layer; and source, gate, and drain electrodes formed on the second nitride semiconductor layer. The source electrode is formed by a plurality of source electrode fingers that are arranged periodically, and the drain electrode is formed by a plurality of drain electrode fingers that are arranged periodically.

Abstract: A semiconductor light emitting device includes: a cavity including a mesa formed over a substrate, the mesa having an active layer and being isolated by a recess formed around the mesa; and a resin layer with which the recess is filled. On the upper surface of the cavity, which is a light output surface through which light emitted from the active layer is output, a metal film having an opening whose diameter is smaller than the emission wavelength of the emitted light is formed.

Abstract: An optical transmission/reception device includes at least one light emitting portion and at least one light receiving portion on the same substrate. The light emitting portion includes at least a lower multilayer reflector and an active layer provided on the lower multilayer reflector. A metal layer including a plurality of opening portions is provided in an upper portion of the light emitting portion. Each of the opening portions has a size smaller than a light emission wavelength of the light emitting portion.

Abstract: Upon reception of a data transmission request, an image input device 1 searches for transmission means available for transmission to a destination, such as transfer to FTP server or transmission by e-mail, and lists all the extracted available transmission means. Image input device 1 then creates a selection menu executed as an applet for receiving a selection of transmission methods from the destination. The destination can use the selection menu acquired from image input device 1 to designate the priority order of desired transmission means and a file name in reception of transmitted data. The selection menu thus created is transmitted to the image input device 1.

Abstract: A surface emitting laser element includes a mesa structure of a semiconductor multilayer film formed to have a convex cross section. A first insulating film of an inorganic material is formed on a side surface of the mesa structure, and on the first insulating film, a resin layer is formed to fill a space surrounding the mesa structure. A second insulating film of an inorganic material is formed on the resin layer, and an upper contact electrode with an electrode opening exposing part of the top surface of the mesa structure is formed on the second insulating film and the mesa structure. With this construction, oxidation and alteration of the resin layer during fabrication of the element can be suppressed to bury the mesa structure with no gap created. Therefore, a semiconductor light-emitting element with high reliability can be provided.

Abstract: A semiconductor light emitting device includes: a cavity including a mesa formed over a substrate, the mesa having an active layer and being isolated by a recess formed around the mesa; and a resin layer with which the recess is filled. On the upper surface of the cavity, which is a light output surface through which light emitted from the active layer is output, a metal film having an opening whose diameter is smaller than the emission wavelength of the emitted light is formed.

Abstract: Upon reception of a data transmission request, an image input device 1 searches for transmission means available for transmission to a destination, such as transfer to FTP server or transmission by e-mail, and lists all the extracted available transmission means. Image input device 1 then creates a selection menu executed as an applet for receiving a selection of transmission methods from the destination. The destination can use the selection menu acquired from image input device 1 to designate the priority order of desired transmission means and a file name in reception of transmitted data. The selection menu thus created is transmitted to the image input device 1.

Abstract: An electronic display device that allows the hierarchy or system to which the display screen belongs to be easily identified, without narrowing the display area of a plurality of screens constituting a director structure. In the display device, a plurality of key input screens form a director structure in association with each other. The directory structure includes first to fourth hierarchy levels. Respective key input screens are located at any of the hierarchy. Upon depression of a transition key in a basic screen belonging to the first hierarchy, the display screen is switched to one of key input screens belonging to the second hierarchy. The display device changes the display color according to the hierarchy to which the key input screen belongs in providing a display of a key input screen.

Abstract: A copying apparatus having a function for automatically turning off the power at a predetermined timing. The copying apparatus determines at the predetermined timing whether or not the apparatus is in an operation interrupt state in which a sheet remains inside the apparatus, so as to, if the apparatus is in the operation interrupt state, discharge the remaining sheet and then to turn off the power of the apparatus.

Abstract: An electric stapler is disposed at the bottom of a tray on which printed sheets are stacked, and is movable along the bottom of the tray. Printed sheets are aligned on the tray along a reference line. The stapler moves along the bottom of the tray and stops at determined points to staple the aligned sheets. A control section is stored with data about the number and location of stapling points proper for each sheet size. The size of printed sheets to be stapled is detected, and the movement of the stapler is controlled so that the stapler can staple at proper points for the detected sheet size.