Abstract: Semiconductor nanoparticles are provided. The semiconductor nanoparticles contains Ag, at least one of In and Ga, and Se. An Ag content is 10 mol % to 30 mol %, a total content of the at least one of In and Ga is 15 mol % to 35 mol %, and an Se content is 35 mol % to 55 mol % in the semiconductor nanoparticles. The semiconductor nanoparticles emit light having an emission spectrum with a peak emission wavelength in a range of 500 nm to 900 nm, and a half bandwidth of 250 meV or less upon irradiation with light in a wavelength range of 350 nm to less than 500 nm.

Abstract: A database creation unit (154) accumulates, in a driving condition database (160), driving condition data wherein feature amounts representing features of driving operation, travelling environment information including travelling spots and road shapes, driver information including attributes of drivers and vehicle type information of vehicles, and whether the drivers have driving experiences of the vehicles are associated with driver identifiers. A driving characteristic estimation unit (155) estimates a driving characteristic of a driver presently driving a vehicle based on the driving condition database (160).

Abstract: The present invention provides a method for producing a polyester resin comprising dicarboxylic acid units and diol units, wherein at least a portion of the diol units is a diol unit having a cyclic acetal skeleton, the method comprising specific steps (1) to (4-2).

Abstract: The present invention provides a method for producing a polyester resin comprising dicarboxylic acid units and diol units, wherein at least a portion of the diol units is a diol unit having a cyclic acetal skeleton, the method comprising specific steps (1) to (4-2).

Abstract: A safe and stable production method of a hydrogenated polymer having high transparency, which is a production method of a hydrogenated polymer by hydrogenating aromatic rings of an aromatic vinyl compound-(meth)acrylate copolymer, in which (1) a solvent solution of the copolymer is added to a reactor, which has a solvent and a supported palladium catalyst charged therein, under a hydrogen atmosphere at a rate of from 0.01 to 15 g/hour in terms of the copolymer per unit mass (g) of the supported palladium catalyst, thereby performing hydrogenation reaction, and then such an operation is performed repeatedly that (2) a hydrogenated polymer is obtained from 30 to 90% by mass of the resulting reaction mixed solution, and a fresh solvent solution of the copolymer is added to the reactor, in which the residual reaction mixed solution is left, or to which the residual reaction mixed solution is returned, at a rate of from 0.

Abstract: In order to suppress occurrence of a random pattern signal is suppressed without the use of a sideband signal in a long distance data transmission exceeding that defined in a PCIe interface specification, provided is a computer system, including a first component having a transmitting unit which transmits a control signal, a second component having a receiving unit which receives the control signal, a transmission path which connects the first component and the second component along which a signal is transmitted and received, wherein: in case of the transmitting unit of the first component transmits a ternary signal with three states of 0/1/Idle to the receiving unit of the second component, the transmitting unit of the first component substitutes a combination of signals representing 0/1 for a signal representing the Idle state, and transmits the substituted signals instead of the ternary signal to the receiving unit of the second component.

Abstract: A safe and stable production method of a hydrogenated polymer having high transparency, which is a production method of a hydrogenated polymer by hydrogenating aromatic rings of an aromatic vinyl compound-(meth)acrylate copolymer, in which (1) a solvent solution of the copolymer is added to a reactor, which has a solvent and a supported palladium catalyst charged therein, under a hydrogen atmosphere at a rate of from 0.01 to 15 g/hour in terms of the copolymer per unit mass (g) of the supported palladium catalyst, thereby performing hydrogenation reaction, and then such an operation is performed repeatedly that (2) a hydrogenated polymer is obtained from 30 to 90% by mass of the resulting reaction mixed solution, and a fresh solvent solution of the copolymer is added to the reactor, in which the residual reaction mixed solution is left, or to which the residual reaction mixed solution is returned, at a rate of from 0.

Abstract: A process for producing a hydrogenated polymer, which includes a step of hydrogenating aromatic rings of an aromatic vinyl compound—(meth)acrylate copolymer. In the process, the copolymer having a ratio, A/B, of from 0.25 to 4.0 (A is a molar number of constitutional units derived from the (meth)acrylate monomer, and B is a molar number of constitutional units derived from the aromatic vinyl monomer) is hydrogenated in a solvent in the presence of a catalyst which is composed of zirconium oxide supporting palladium. By the process, a highly transparent, hydrogenated polymer is stably and rapidly produced for a long period of time or repeatedly.

Abstract: In the production of a nuclear-hydrogenated polymer, the hydrogenation of an aromatic vinyl compound—(meth)acrylate copolymer is conducted in a mixed solvent comprising an ester compound and an alcohol compound in the presence of a catalyst. By this method, a highly transparent nuclear-hydrogenated polymer is produced safely, stably and quickly, even when the degree of nuclear-hydrogenation is low.

Abstract: A process for producing a hydrogenated polymer, which includes a step of hydrogenating aromatic rings of an aromatic vinyl compound—(meth)acrylate copolymer. In the process, the copolymer having a ratio, A/B, of from 0.25 to 4.0 (A is a molar number of constitutional units derived from the (meth)acrylate monomer, and B is a molar number of constitutional units derived from the aromatic vinyl monomer) is hydrogenated in a solvent in the presence of a catalyst which is composed of zirconium oxide supporting palladium. By the process, a highly transparent, hydrogenated polymer is stably and rapidly produced for a long period of time or repeatedly.

Abstract: In the production of a nuclear-hydrogenated polymer, the hydrogenation of an aromatic vinyl compound—(meth)acrylate copolymer is conducted in a mixed solvent comprising an ester compound and an alcohol compound in the presence of a catalyst. By this method, a highly transparent nuclear-hydrogenated polymer is produced safely, stably and quickly, even when the degree of nuclear-hydrogenation is low.

Abstract: On a silicon substrate 1 is provided a silicon oxide film 2, on which a polycrystalline silicon film 3 is formed by a low pressure CVD method at a monosilane partial pressure of no more than 10 Pa and a film formation temperature of no lower than 600° C. The polycrystalline silicon film is doped with an impurity such as phosphorus in a concentration of 1×1020 atoms/cm3 to 1×1021 atoms/cm3 to form a phosphosilicate glass film 6, and after removing it, the polycrystalline silicon film is thermally oxidized in an oxidative atmosphere to form a dielectric film 5 on the surface. A polycrystalline silicon film 4 is formed on the dielectric film 5, which is treated as the oriented polycrystalline silicon film 3a to form an oriented polycrystalline silicon film 4a. The oriented polycrystalline silicon film 4a as an upper electrode and the oriented polycrystalline silicon film 3a as a lower electrode are wired to obtain a semiconductor device having a capacitor.

Abstract: On a silicon substrate 1 is provided a silicon oxide film 2, on which a polycrystalline silicon film 3 is formed by a low pressure CVD method at a monosilane partial pressure of no more than 10 Pa and a film formation temperature of no lower than 600.degree. C. The polycrystalline silicon film is doped with an impurity such as phosphorus in a concentration of 1.times.10.sup.20 atoms/cm.sup.3 to 1.times.10.sup.21 atoms/cm.sup.3 to form a phosphosilicate glass film 6, and after removing it, the polycrystalline silicon film is thermally oxidized in an oxidative atmosphere to form a dielectric film 5 on the surface. A polycrystalline silicon film 4 is formed on the dielectric film 5, which is treated as the oriented polycrystalline silicon film 3a to form an oriented polycrystalline silicon film 4a. The oriented polycrystalline silicon film 4a as an upper electrode and the oriented polycrystalline silicon film 3a as a lower electrode are wired to obtain a semiconductor device having a capacitor.