Abstract: A method of manufacturing a semiconductor device with a silicide electrode is provided which can form a good contact even at a scaled-down pattern. The method includes the steps of: forming an insulated gate structure with side wall spacer on a p-type region of a silicon (Si) substrate; implanting arsenic ions in source/drain regions at a dose less than 5×1015 cm−2; forming a laminated layer of a Co film and a TiN film on the surface of the substrate; heating the substrate to let the Co film react with an underlying Si region for silicidation; and removing the TiN film.

Abstract: A method for manufacturing a semiconductor apparatus for detecting radiation provided with phosphor comprises the steps of forming a phosphor layer integrally with a meshed partition plate having partitions per pixel of the semiconductor apparatus for detecting radiation, and of separating the phosphor per pixel by removing the phosphor on the partitioning portion of the partition plate by the irradiation of laser beam in the form of grooves together with the surface layer of the partitioning portions in order to make the phosphor thick to obtain a higher sensitivity, and also to make pixel pitches finer to enhance resolution, thus obtaining exact images without creating any cross talks between pixels.

Abstract: A large-area, compact and highly reliable radiation detector is produced by a process comprising the steps of laminating a phosphor sheet to a substrate having at least a photoelectric transducer, a driving element and a wiring matrix, and sealing the phosphor sheet and substrate thus laminated, by imparting a sealing medium to at least part of the peripheral portions of the phosphor sheet and the substrate, at least one of the steps being carried out in a vacuum chamber, to thereby bring the phosphor sheet into close contact with the substrate by atmospheric pressure.

Abstract: An image-shake correcting device includes structure for detecting a vibration, and a device for correcting a motion of an image due to the detected vibration. Limiting circuitry is provided for limiting a frequency response of an output of the detecting structure, and switching structure is provided for switching the correcting device between a stopping state and a driving state. Control circuitry is provided for changing a frequency response characteristic of the limiting circuitry when the correcting device is switched from the stopping state to the driving state by the switching structure.

Abstract: A semiconductor device is produced by a method which comprises forming a conductor pattern in or on a semiconductor layer, covering the surface of the conductor pattern with an antioxidant conductor layer, forming a first insulating layer on the semiconductor layer, forming a lower electrode of a capacitor on the first insulating layer, forming a dielectric layer of an oxygen-containing material on the lower electrode, forming an upper electrode on the dielectric layer, sequentially patterning the upper electrode, the dielectric layer, and the lower electrode in the shape of a capacitor, forming a second insulating layer covering the semiconductor layer, the antioxidant conductor layer, and the capacitor, patterning the second insulating layer thereby simultaneously forming a first opening and a second opening on the upper electrode and the conductor pattern, heating the interiors of the first opening and the second opening and the upper electrode in an oxygen-containing atmosphere, forming a conductor layer

Abstract: A manufacturing method of a semiconductor device of the present invention comprises the steps of forming an amorphous layer on an upper layer of the impurity diffusion layer made of silicon by virtue of ion-implantation, forming a cobalt film on the impurity diffusion layer, forming a cobalt silicide layer made of Co.sub.2 Si or CoSi on an upper layer of the amorphous layer at a low temperature by reacting the cobalt film to silicon in the impurity diffusion layer in virtue of first annealing, then removing the cobalt film which has not reacted, and changing Co.sub.2 Si or CoSi constituting the cobalt silicide layer into CoSi.sub.2 to have low resistance and also rendering the cobalt silicide layer to enter into a depth identical to or deeper than an initial depth of the amorphous layer in virtue of second annealing.

Abstract: A method of manufacturing a semiconductor device which has the steps of: forming an insulated gate field effect transistor of a first conductivity type on a semiconductor substrate,; forming a first insulating film over the semiconductor substrate, the first insulating film covering the insulated gate electrode; forming a contact window through the first insulating film to at least one of the source/drain regions; embedding a metal plug in the contact window; forming a second insulating film having an oxygen blocking function on the first insulating film, the second insulating film covering the metal plug; forming a capacitor lower electrode on the second insulating film; forming a dielectric oxide film having a perovskite crystal structure on the lower electrode; annealing the semiconductor substrate in an oxygen-containing atmosphere; and forming a capacitor upper electrode on the dielectric oxide film.

Abstract: A video camera includes an image pickup device for photoelectrically converting into a video signal an optical image focused on a pickup surface of the device, a focus adjusting device for focusing the optical image on the image pickup surface, electronic magnification varying circuitry for electronically varying an image magnification by signal processing, and a control circuit for controlling an operation of the focus adjusting device in manners which differ depending on whether or not the image magnification is varied by the electronic magnification varying circuitry.

Abstract: A dual-level metalization method for ferroelectric integrated circuits includes the steps forming a planarized oxide layer over a partially formed integrated circuit ferroelectric device, forming a cap layer over the planarized oxide layer, forming vias into the planarized oxide layer and cap layer to provide access to the desired first-level metal contacts, and metalizing the selected first-level metal contacts with second-level metal. The cap layer can be doped or undoped titanates, zirconates, niobates, tantalates, stanates, hafnates, or manganates such as doped and undoped PZT (lead zirconate titanate), BST (barium strontium titanate), or SBT (strontium bismuth tantalate).

Abstract: A specimen measurement apparatus and method includes sequentially moving individual specimens, radiating first and second radiation beams on first and second positions spaced apart from each other in a moving direction of the specimens, time-serially detecting light components emerging from specimens passing the first and second positions using the same light detector, and an optical selector, arranged in an optical path between the radiation positions and a light detector, for, when a specimen passes the first position, selectively guiding a light component having a first optical characteristic emerging from the specimen to the light detector, and for, when the specimen passes the second position, selectively guiding a light component having a second optical characteristic emerging from the specimen to the light detector.

Abstract: A camera, which includes a first lens group for a zoom operation, a second lens group for a focus adjustment operation, a motor for moving the first and second lens groups parallel to an optical axis, a sharpness signal detection circuit for extracting a sharpness signal according to a focusing degree from a video signal of an object image formed via the first and second lens groups, and a focus adjustment circuit for performing the focus adjustment operation on the basis of the sharpness signal output from the sharpness signal detection circuit, further includes a sharpness signal detection region changing circuit for changing a region for extracting the sharpness signal at a predetermined period within a picture obtained from the video signal.

Abstract: On a semiconductor substrate with an exposed silicon region, a metal layer such as Co is deposited and a silicide layer is formed by heat treatment. Thereafter, a metal layer such as Ni and a silicon layer are deposited, and one of them is patterned. The metal layer and silicon layer are heated for silicification to form a local interconnect. A semiconductor device manufacturing method is provided which uses salicide technique and can form a local interconnect of good quality.

Abstract: A camera capable of utilizing a visual line of a photographer for a photographic operation is provided. The camera includes a visual-line detecting part for detecting a visual line (fixation point) of the photographer and a correcting part for correcting a deviation between the fixation point detected by the visual-line detecting part and an actual fixation point of the photographer's eye. The correcting part operates in association with a starting operation of the camera.

Abstract: An imaging apparatus makes it possible to precisely focus on an object to be photographed in each photographic mode by controlling the focusing of the object in accordance with the photographic mode.

Abstract: A laser beam from a light source having a laser beam emitting portion and a laser output mirror is applied to an irradiation area in a flow cell by an irradiation optical system. Scattered light and fluorescence radiated by particles flowing through the flow cell are detected by a detector. The vicinity of the laser output mirror which is the fulcrum of the fluctuation of the pointing of the laser beam and the irradiation area are made optically substantially conjugate with each other, and even if the pointing of the laser beam fluctuates, measurement can be effected accurately without being affected thereby.

Abstract: A semiconductor device includes an insulating support layer on which are mounted, in succession, a conductive layer, a buried layer comprising first and second spaced portions and a semiconductor single crystal layer comprising spaced first and second portions respectively supported on the first and second spaced portions of the buried layer, the respective first and second portions having respective, first and second common sidewalls defining respective, first and second peripheries thereof and respectively comprising a transistor region and a collector electrode region. A remaining exposed surface portion of the conductive layer extends between the spaced, opposing portions of the sidewalls of the transistor and collector electrode regions.

Abstract: A driving apparatus for a light source is provided with a light generating unit including a light source which emits a light component polarized in a first predetermined direction and another light component polarized in a second, perpendicular direction. The first and second light components are emitted in amounts which vary depending on the total emitted light output. A light splitter is provided for splitting the two polarized components in different splitting ratios into first and second light paths. A photodetector detects the light intensity in the first light path, and a control unit controls the light generating unit so as to maintain the light intensity in the second light path at a predetermined state based on the detection output of the photodetector.

Abstract: An optical device includes a scanning means, a first image-formation optical system, and a second image-formation optical system. A system for a device, such as the one in which images are formed by scanning with this optical device. The scanning means scans a light beam emitted from a light source. The first image-formation optical system forms the light beam, scanned by the scanning means, into an image in a first spot diameter with respect to the scanning direction, on a surface to be scanned. The second image-formation optical system utilizes the first image-formation optical system and at least part of an optical system for forming the light beam scanned, by the scanning means, into an image in a second spot diameter which is different from the first spot diameter, with respect to the scanning direction, on the surface to be scanned.

Abstract: A mixture is prepared by mixing carriers to which a substance specifically reacting on an object substance adheres with a sample containing the object substance. The mixture is irradiated by light having an intensity gradient to concentrate the carriers at and near the irradiated positions by the optical pressure of the light. The efficiency of an agglomeration reaction of the carriers is thereby increased. A qualitative or quantitative measurement of the object substance is performed by detecting a state of agglomeration of the carriers within the mixture.

Abstract: Molten resin is ejected from the gate provided in the wall of a mold, which corresponds to the face of the head insertion opening of a disk cartridge, so that the molded half of the disk cartridge has scarcely any defect in the surface thereof.