Patents by Inventor Tatsuya Yokota
Tatsuya Yokota has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7473980Abstract: The semiconductor device comprises a capacitor formed over a semiconductor substrate 10 and including a lower electrode 32, a dielectric film 34 formed over the lower electrode and an upper electrode 36 formed over the dielectric film, a first insulation film 42 formed over the semiconductor substrate and the capacitor, a first interconnection 48 formed over the first insulation film and electrically connected to the capacitor, a first hydrogen diffusion preventive film 50 for preventing the diffusion of hydrogen formed over the first insulation film, covering the first interconnection, a second insulation film 58 formed over the first hydrogen diffusion preventive film and having the surface planarized, a third insulation film 62 formed over the second insulation film, a second interconnection 70b formed over the third insulation film, and a second hydrogen diffusion preventive film 72 for preventing the diffusion of hydrogen formed on the third insulation film, covering the second interconnection.Type: GrantFiled: October 2, 2006Date of Patent: January 6, 2009Assignee: Fujitsu LimitedInventors: Naoya Sashida, Tatsuya Yokota
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Publication number: 20080100127Abstract: A hub unit for vehicle according to the invention includes a flange formed with plural bolt-hole groups each of which includes plural bolt holes each having a female thread of the same nominal diameter formed in its inside surface and each of which has a hole-pattern of the bolt holes circumferentially arranged on the same pitch circle diameter with equal spacing. The plural bolt-hole groups are mutually different in at least either one of the nominal female-thread diameter and the pitch circle diameter R, so that plural types of components having different hole-patterns may be directly mounted to the flange without using an adaptor as an independent member. This leads to cost reduction.Type: ApplicationFiled: September 26, 2005Publication date: May 1, 2008Inventor: Tatsuya Yokota
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Publication number: 20070269155Abstract: A rolling bearing device for a wheel includes: a hub wheel including a hub spindle to be assembled with a rolling bearing, a flange formed on the hub spindle, and a bolt hole formed through the flange; a hub bolt to be press-fitted in the bolt hole, in which hub bolt includes a shank formed with a serrated shank portion to press-fitted to bite the bolt hole, an intermediate shank portion and a threaded portion in this order; and an annular ridge formed on an inner circumference of an opening on a press-fit exit side of the bolt hole. The annular ridge have a diameter smaller than that of the bolt hole and comes into contact or close to the intermediate shank portion to clog the bolt hole.Type: ApplicationFiled: May 21, 2007Publication date: November 22, 2007Applicant: JTEKT CORPORATIONInventors: Tatsuki Mori, Shunichi Matsui, Tatsuya Yokota, Hiroshi Yano, Kenji Shitsukawa, Yoshiomi Matsuo
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Patent number: 7297558Abstract: A W plug (24) is formed and a W oxidation preventing barrier metal film (25) is formed thereon. After that, an SiON film (27) thinner than the W oxidation preventing barrier metal film (25) is formed and Ar sputter etching is performed on the SiON film (27). As a result, the shape of the surface of the SiON film (27) becomes gentler and deep trenches disappear. Next, an SiON film (28) is formed on the whole surface. A voidless W oxidation preventing insulating film (29) is composed of the SiON (28) film and the SiON film (27).Type: GrantFiled: April 15, 2005Date of Patent: November 20, 2007Assignee: Fujitsu LimitedInventors: Yasutaka Ozaki, Tatsuya Yokota, Nobutaka Ohyagi
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Publication number: 20070063241Abstract: The semiconductor device comprises a capacitor formed over a semiconductor substrate 10 and including a lower electrode 32, a dielectric film 34 formed over the lower electrode and an upper electrode 36 formed over the dielectric film, a first insulation film 42 formed over the semiconductor substrate and the capacitor, a first interconnection 48 formed over the first insulation film and electrically connected to the capacitor, a first hydrogen diffusion preventive film 50 for preventing the diffusion of hydrogen formed over the first insulation film, covering the first interconnection, a second insulation film 58 formed over the first hydrogen diffusion preventive film and having the surface planarized, a third insulation film 62 formed over the second insulation film, a second interconnection 70b formed over the third insulation film, and a second hydrogen diffusion preventive film 72 for preventing the diffusion of hydrogen formed on the third insulation film, covering the second interconnection.Type: ApplicationFiled: October 2, 2006Publication date: March 22, 2007Applicant: FUJITSU LIMITEDInventors: Naoya Sashida, Tatsuya Yokota
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Publication number: 20050181605Abstract: A W plug (24) is formed and a W oxidation preventing barrier metal film (25) is formed thereon. After that, an SiON film (27) thinner than the W oxidation preventing barrier metal film (25) is formed and Ar sputter etching is performed on the SiON film (27). As a result, the shape of the surface of the SiON film (27) becomes gentler and deep trenches disappear. Next, an SiON film (28) is formed on the whole surface. A voidless W oxidation preventing insulating film (29) is composed of the SiON (28) film and the SiON film (27).Type: ApplicationFiled: April 15, 2005Publication date: August 18, 2005Inventors: Yasutaka Ozaki, Tatsuya Yokota, Nobutaka Ohyagi
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Patent number: 6913970Abstract: A semiconductor device formed by forming contact holes in the insulating film, that covers the source/drain of the MOSFET and the capacitor in the memory cell region, on the lower electrode of the capacitor by the same steps, then filling the plugs into contact holes, and then forming the contact hole on the upper electrode of the capacitor. Accordingly, there can be provided the semiconductor device having the ferroelectric capacitor, capable of simplifying respective wiring connection structures to the upper electrode and the lower electrode of the capacitor by suppressing the damage to the capacitor formed over the transistor.Type: GrantFiled: November 26, 2002Date of Patent: July 5, 2005Assignee: Fujitsu LimitedInventors: Kenichi Inoue, Yoshinori Obata, Takeyasu Saito, Kaoru Saigoh, Naoya Sashida, Koji Tani, Jirou Miura, Tatsuya Yokota, Satoru Mihara, Yukinobu Hikosaka, Yasutaka Ozaki
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Patent number: 6908867Abstract: There are contained the steps of forming sequentially a first conductive film, a dielectric film, and a second conductive film on a first insulating film, forming an upper electrode of a capacitor by patterning the second conductive film, patterning the dielectric film to leave under the upper electrode, forming a lower electrode of the capacitor by patterning the first conductive film, covering the capacitor and the first insulating film with a second insulating film, and annealing at least one of the first insulating film and the second insulating film in an inert-gas atmosphere and then exposing the film to an N2O plasma.Type: GrantFiled: June 13, 2003Date of Patent: June 21, 2005Assignee: Fujitsu LimitedInventor: Tatsuya Yokota
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Publication number: 20030235969Abstract: There are contained the steps of forming sequentially a first conductive film, a dielectric film, and a second conductive film on a first insulating film, forming an upper electrode of a capacitor by patterning the second conductive film, patterning the dielectric film to leave under the upper electrode, forming a lower electrode of the capacitor by patterning the first conductive film, covering the capacitor and the first insulating film with a second insulating film, and annealing at least one of the first insulating film and the second insulating film in an inert-gas atmosphere and then exposing the film to an N2O plasma.Type: ApplicationFiled: June 13, 2003Publication date: December 25, 2003Applicant: Fujitsu LimitedInventor: Tatsuya Yokota
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Publication number: 20030080364Abstract: There are provided the steps of forming contact holes in the insulating film, that covers the source/drain of the MOSFET and the capacitor in the memory cell region, on the lower electrode of the capacitor by the same steps, then filling the plugs into the contact holes, and then forming the contact hole on the upper electrode of the capacitor. Accordingly, there can be provided the semiconductor device having the ferroelectric capacitor, capable of simplifying respective wiring connection structures to the upper electrode and the lower electrode of the capacitor by suppressing the damage to the capacitor formed over the transistor.Type: ApplicationFiled: November 26, 2002Publication date: May 1, 2003Applicant: Fujitsu LimitedInventors: Kenichi Inoue, Yoshinori Obata, Takeyasu Saito, Kaoru Saigoh, Naoya Sashida, Koji Tani, Jirou Miura, Tatsuya Yokota, Satoru Mihara, Yukinobu Hikosaka, Yasutaka Ozaki
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Patent number: 6509593Abstract: A semiconductor device formed by forming contact holes in the insulating film, that covers the source/drain of the MOSFET and the capacitor in the memory cell region, on the lower electrode of the capacitor by the same steps, then filling the plugs into the contact holes, and then forming the contact hole on the upper electrode of the capacitor. Accordingly, there can be provided the semiconductor device having the ferroelectric capacitor, capable of simplifying respective wiring connection structures to the upper electrode and the lower electrode of the capacitor by suppressing the damage to the capacitor formed over the transistor.Type: GrantFiled: December 29, 2000Date of Patent: January 21, 2003Assignee: Fujitsu LimitedInventors: Kenichi Inoue, Yoshinori Obata, Takeyasu Saito, Kaoru Saigoh, Naoya Sashida, Koji Tani, Jirou Miura, Tatsuya Yokota, Satoru Mihara, Yukinobu Hikosaka, Yasutaka Ozaki
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Publication number: 20020011616Abstract: There are provided the steps of forming contact holes in the insulating film, that covers the source/drain of the MOSFET and the capacitor in the memory cell region, on the lower electrode of the capacitor by the same steps, then filling the plugs into the contact holes, and then forming the contact hole on the upper electrode of the capacitor. Accordingly, there can be provided the semiconductor device having the ferroelectric capacitor, capable of simplifying respective wiring connection structures to the upper electrode and the lower electrode of the capacitor by suppressing the damage to the capacitor formed over the transistor.Type: ApplicationFiled: December 29, 2000Publication date: January 31, 2002Applicant: Fujitsu LimitedInventors: Kenichi Inoue, Yoshinori Obata, Takeyasu Saito, Kaoru Saigoh, Naoya Sashida, Koji Tani, Jirou Miura, Tatsuya Yokota, Satoru Mihara, Yukinobu Hikosaka, Yasutaka Ozaki