Abstract: Method of depositing a film having a substantially uniform thickness by means of chemical vapor deposition, comprising: providing a reaction chamber; providing a substrate in said reaction chamber; subjecting the substrate to a series of deposition cycles, wherein each deposition cycle includes the steps of: (a) during a first time interval, supplying a first reactant to the reaction chamber; (b) during a second time interval, supplying a second reactant to the reaction chamber; and (c) during a third time interval, supplying neither the first nor the second reactant to the reaction chamber; wherein a start of the second time interval lies within the first time interval, such that a pre-exposure interval exists between a start of the first time interval and the start of the second time interval, during which pre-exposure interval the first reactant is supplied to the reaction chamber while the second reactant is not.

Abstract: In some embodiments, after depositing conductive material on substrates in a deposition chamber, a reducing gas is introduced into as the chamber in preparation for unloading the substrates. The deposition chamber can be a batch CVD chamber and the deposited material can be a metal nitride, e.g., a transition metal nitride such as titanium metal nitride. As part of the preparation for unloading substrates from the chamber, the substrates may be cooled and the chamber is backfilled with a reducing gas to increase the chamber pressure. It has been found that oxidants can be introduced into the chamber during this time. The introduction of a reducing gas has been found to protect exposed metal-containing films from oxidation during the backfill and/or cooling process. The reducing gas is formed of a reducing agent and a carrier gas, with the reducing agent being a minority component of the reducing gas.

Abstract: In some embodiments, after depositing conductive material on substrates in a deposition chamber, a reducing gas is introduced into as the chamber in preparation for unloading the substrates. The deposition chamber can be a batch CVD chamber and the deposited material can be a metal nitride, e.g., a transition metal nitride such as titanium metal nitride. As part of the preparation for unloading substrates from the chamber, the substrates may be cooled and the chamber is backfilled with a reducing gas to increase the chamber pressure. It has been found that oxidants can be introduced into the chamber during this time. The introduction of a reducing gas has been found to protect exposed metal-containing films from oxidation during the backfill and/or cooling process. The reducing gas is formed of a reducing agent and a carrier gas, with the reducing agent being a minority component of the reducing gas.