Patents by Inventor Tatsuyoshi Kawamoto
Tatsuyoshi Kawamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10507563Abstract: Provided is a treatment composition for chemical mechanical polishing, for treating an object to be treated including a wiring layer containing a metal, the treatment composition for chemical mechanical polishing containing: (A) a nitrogen-containing compound; (B) at least one kind of compound selected from the group consisting of a surfactant and polyacrylic acid; and (D) a pH adjusting agent, in which in terms of electrode charge transfer resistance value obtained by AC impedance measurement using the metal for an electrode, a sum of electrode charge transfer resistance values RA+RB in aqueous solutions each containing the component (A) or (B) and the component (D), and an electrode charge transfer resistance value RC in an aqueous solution containing the components (A), (B), and (D) have a relationship of RC/(RA+RB)>1.Type: GrantFiled: March 30, 2016Date of Patent: December 17, 2019Assignee: JSR CORPORATIONInventors: Kiyotaka Mitsumoto, Tatsuyoshi Kawamoto, Tatsuya Yamanaka, Megumi Arakawa, Eiichirou Kunitani, Masashi Iida
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Patent number: 10262866Abstract: A chemical mechanical planarization for indium phosphide material is provided in which at least one opening is formed within a dielectric layer located on a substrate. An indium phosphide material is epitaxially grown within the at least one opening of the dielectric layer which extends above a topmost surface of the dielectric layer. The indium phosphide material is planarized using at least one slurry composition to form coplanar surfaces of the indium phosphide material and the dielectric layer, where a slurry composition of the at least one slurry composition polishes the indium phosphide material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator and an oxidizer, the at least one pH modulator including an acidic pH modulator, but lacks a basic pH modulator, and where the oxidizer suppresses generation of phosphine gas.Type: GrantFiled: January 29, 2018Date of Patent: April 16, 2019Assignees: International Business Machines Corporation, JSR CORPORATIONInventors: Henry A. Beveridge, Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
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Publication number: 20180166292Abstract: A chemical mechanical planarization for indium phosphide material is provided in which at least one opening is formed within a dielectric layer located on a substrate. An indium phosphide material is epitaxially grown within the at least one opening of the dielectric layer which extends above a topmost surface of the dielectric layer. The indium phosphide material is planarized using at least one slurry composition to form coplanar surfaces of the indium phosphide material and the dielectric layer, where a slurry composition of the at least one slurry composition polishes the indium phosphide material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator and an oxidizer, the at least one pH modulator including an acidic pH modulator, but lacks a basic pH modulator, and where the oxidizer suppresses generation of phosphine gas.Type: ApplicationFiled: January 29, 2018Publication date: June 14, 2018Inventors: Henry A. Beveridge, Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
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Publication number: 20180111248Abstract: Provided is a treatment composition for chemical mechanical polishing, for treating an object to be treated including a wiring layer containing a metal, the treatment composition for chemical mechanical polishing containing: (A) a nitrogen-containing compound; (B) at least one kind of compound selected from the group consisting of a surfactant and polyacrylic acid; and (D) a pH adjusting agent, in which in terms of electrode charge transfer resistance value obtained by AC impedance measurement using the metal for an electrode, a sum of electrode charge transfer resistance values RA+RB in aqueous solutions each containing the component (A) or (B) and the component (D), and an electrode charge transfer resistance value RC in an aqueous solution containing the components (A), (B), and (D) have a relationship of RC/(RA+RB)>1.Type: ApplicationFiled: March 30, 2016Publication date: April 26, 2018Applicant: JSR CORPORATIONInventors: Kiyotaka MITSUMOTO, Tatsuyoshi KAWAMOTO, Tatsuya YAMANAKA, Megumi ARAKAWA, Eiichirou KUNITANI, Masashi IIDA
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Patent number: 9916985Abstract: A chemical mechanical planarization for indium phosphide material is provided in which at least one opening is formed within a dielectric layer located on a substrate. An indium phosphide material is epitaxially grown within the at least one opening of the dielectric layer which extends above a topmost surface of the dielectric layer. The indium phosphide material is planarized using at least one slurry composition to form coplanar surfaces of the indium phosphide material and the dielectric layer, where a slurry composition of the at least one slurry composition polishes the indium phosphide material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator and an oxidizer, the at least one pH modulator including an acidic pH modulator, but lacks a basic pH modulator, and where the oxidizer suppresses generation of phosphine gas.Type: GrantFiled: May 20, 2016Date of Patent: March 13, 2018Assignees: International Business Machines Corporation, JSR CORPORATIONInventors: Henry A. Beveridge, Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
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Patent number: 9890300Abstract: Method for chemical mechanical planarization is provided, which includes: forming a dielectric layer containing at least one opening, the dielectric layer is located on a substrate; epitaxially growing a germanium material within the at least one opening of the dielectric layer, the germanium material extending above a topmost surface of the dielectric layer; and planarizing the germanium material using at least one slurry composition to form coplanar surfaces of the germanium material and the dielectric layer, where a slurry composition of at least one slurry composition polishes the germanium material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator, and an oxidizer, the at least one pH modulator including an acidic pH modulator, and lacking a basic pH modulator.Type: GrantFiled: April 18, 2017Date of Patent: February 13, 2018Assignees: International Business Machines Corporation, JSR CorporationInventors: Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
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Publication number: 20170218229Abstract: Method for chemical mechanical planarization is provided, which includes: forming a dielectric layer containing at least one opening, the dielectric layer is located on a substrate; epitaxially growing a germanium material within the at least one opening of the dielectric layer, the germanium material extending above a topmost surface of the dielectric layer; and planarizing the germanium material using at least one slurry composition to form coplanar surfaces of the germanium material and the dielectric layer, where a slurry composition of at least one slurry composition polishes the germanium material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator, and an oxidizer, the at least one pH modulator including an acidic pH modulator, and lacking a basic pH modulator.Type: ApplicationFiled: April 18, 2017Publication date: August 3, 2017Inventors: Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
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Patent number: 9646842Abstract: Method for chemical mechanical planarization is provided, which includes: forming a dielectric layer containing at least one opening, the dielectric layer is located on a substrate; epitaxially growing a germanium material within the at least one opening of the dielectric layer, the germanium material extending above a topmost surface of the dielectric layer; and planarizing the germanium material using at least one slurry composition to form coplanar surfaces of the germanium material and the dielectric layer, where a slurry composition of at least one slurry composition polishes the germanium material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator, and an oxidizer, the at least one pH modulator including an acidic pH modulator, and lacking a basic pH modulator.Type: GrantFiled: May 20, 2016Date of Patent: May 9, 2017Assignees: International Business Machines Corporation, JSR CORPORATIONInventors: Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
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Patent number: 9646841Abstract: A chemical mechanical planarization for a Group III arsenide material is provided in which at least one opening is formed within a dielectric layer located on a substrate. A Group III arsenide material is epitaxially grown within the at least one opening of the dielectric layer which extends above a topmost surface of the dielectric layer. The Group III arsenide material is planarized using at least one slurry composition to form coplanar surfaces of the Group III arsenide material and the dielectric layer, where a slurry composition of the at least one slurry composition polishes the Group III arsenide material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator and an oxidizer, the at least one pH modulator including an acidic pH modulator, but lacks a basic pH modulator, and where the oxidizer suppresses generation of an arsine gas.Type: GrantFiled: May 20, 2016Date of Patent: May 9, 2017Assignees: International Business Machines Corporation, JSR CorporationInventors: Henry A. Beveridge, Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
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Publication number: 20170110334Abstract: Method for chemical mechanical planarization is provided, which includes: forming a dielectric layer containing at least one opening, the dielectric layer is located on a substrate; epitaxially growing a germanium material within the at least one opening of the dielectric layer, the germanium material extending above a topmost surface of the dielectric layer; and planarizing the germanium material using at least one slurry composition to form coplanar surfaces of the germanium material and the dielectric layer, where a slurry composition of at least one slurry composition polishes the germanium material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator, and an oxidizer, the at least one pH modulator including an acidic pH modulator, and lacking a basic pH modulator.Type: ApplicationFiled: May 20, 2016Publication date: April 20, 2017Inventors: Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
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Publication number: 20170110332Abstract: A chemical mechanical planarization for indium phosphide material is provided in which at least one opening is formed within a dielectric layer located on a substrate. An indium phosphide material is epitaxially grown within the at least one opening of the dielectric layer which extends above a topmost surface of the dielectric layer. The indium phosphide material is planarized using at least one slurry composition to form coplanar surfaces of the indium phosphide material and the dielectric layer, where a slurry composition of the at least one slurry composition polishes the indium phosphide material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator and an oxidizer, the at least one pH modulator including an acidic pH modulator, but lacks a basic pH modulator, and where the oxidizer suppresses generation of phosphine gas.Type: ApplicationFiled: May 20, 2016Publication date: April 20, 2017Inventors: Henry A. Beveridge, Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
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Publication number: 20170110333Abstract: A chemical mechanical planarization for a Group III arsenide material is provided in which at least one opening is formed within a dielectric layer located on a substrate. A Group III arsenide material is epitaxially grown within the at least one opening of the dielectric layer which extends above a topmost surface of the dielectric layer. The Group III arsenide material is planarized using at least one slurry composition to form coplanar surfaces of the Group III arsenide material and the dielectric layer, where a slurry composition of the at least one slurry composition polishes the Group III arsenide material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator and an oxidizer, the at least one pH modulator including an acidic pH modulator, but lacks a basic pH modulator, and where the oxidizer suppresses generation of an arsine gas.Type: ApplicationFiled: May 20, 2016Publication date: April 20, 2017Inventors: Henry A. Beveridge, Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
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Publication number: 20120175550Abstract: A chemical mechanical polishing aqueous dispersion includes (A) silica particles, and (B) a compound that includes two or more carboxyl groups, a particle size (Db) of the silica particles (A) that is detected with a highest detection frequency (Fb) being larger than 35 nm and 90 nm or less, and a ratio (Fa/Fb) of a detection frequency (Fa) that corresponds to a particle size (Da) of larger than 90 nm and 100 nm or less to the detection frequency (Fb) being 0.5 or less when measuring a particle size distribution of the chemical mechanical polishing aqueous dispersion by a dynamic light scattering method.Type: ApplicationFiled: July 15, 2010Publication date: July 12, 2012Applicant: JSR CORPORATIONInventors: Atsushi Baba, Tatsuyoshi Kawamoto, Yugo Tai, Yasutaka Kamei
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Publication number: 20090269683Abstract: A radiation sensitive resin composition comprising (A) a colorant, (B) an alkali-soluble resin, (C) a polyfunctional monomer and (D) a radiation sensitive radical generator, wherein the alkali-soluble resin (B) is a resin having a group containing a dithiocarbonyl bond at least one terminal of its polymer chain. A color filter which is free from burning can be manufactured from this composition at a high yield.Type: ApplicationFiled: September 7, 2006Publication date: October 29, 2009Applicant: JSR CORPORATIONInventors: Tatsuyoshi Kawamoto, Tsukasa Toyoshima, Masashi Arai, Ryu Matsumoto, Tomio Nagatsuka, Toshihiro Tadaki