Abstract: The present disclosure provides fine electrodes in which an organic semiconductor does not easily change with time, and which can be applied to manufacturing of a practical integrated circuit of an organic semiconductor device. The present disclosure relates to electrodes for source/drain of an organic semiconductor device, comprising 10 or more sets of electrodes, wherein a channel length between the electrodes in each set is 200 ?m or less, and the electrodes in each set have a surface with a surface roughness Rq of 2 nm or less.

Abstract: The present disclosure provides an organic semiconductor single crystal film that can be disposed on a desired substrate and has a thickness thinner than that of a conventional film. The present disclosure is directed to an organic semiconductor device comprising: a substrate; and an organic semiconductor single crystal film on the substrate, wherein an average film thickness of the organic semiconductor single crystal film is 2 to 100 nm, and at least a portion of a surface of the substrate in contact with the organic semiconductor single crystal film is hydrophobic, solvent soluble, non-heat resistant, or a combination thereof.