Abstract: A gas analysis system includes: a laser light source for emitting a laser light to be transmitted through an analysis target gas; a photodetector configured to receive the laser light transmitted through the analysis target gas, for outputting a signal corresponding to an emission intensity of the received laser light; a gas analysis apparatus for analyzing the analysis target gas on the basis of the signal outputted from the photodetector; a variable light attenuator disposed between the analysis target gas and the laser light source; a transmitted-light amount detector configured to evaluate a transmitted light amount of the laser light transmitted through the analysis target gas on the basis of the signal outputted from the photodetector; and an attenuation amount controller configured to control an attenuation amount of the variable light attenuator on the basis of the transmitted light amount of the laser light evaluated by the transmitted-light amount detector.

Abstract: This N2O analysis device is provided with: a light source (11) which radiates laser light onto an exhaust gas (5) containing N2O, H2O and CO2; a light receiver (13) which receives the laser light that has been radiated onto the exhaust gas (5); a light source control unit (14a) of a control device (14), which controls the wavelength of the laser light radiated by the light source (11) to between 3.84 ?m and 4.00 ?m; and a signal analyzing unit (14b) of the control device (14), which calculates the N2O concentration by means of infrared spectroscopy, using the laser light received by the light receiver (13) and the laser light controlled by the light source control unit (14a) of the control device (14).

Abstract: To provide an SO3 analysis device and analysis method capable of accurately and rapidly measuring the concentration of SO3 in exhaust gas without pre-processing. The present invention is provided with a light source (11) for radiating laser light (2) to exhaust gas (1) including SO3, CO2, and H2O, a photodetector (13) for receiving the laser light (2) radiated to the exhaust gas (1), a light source control unit (14a) of a control device (14) for controlling the wavelength of the laser light (2) radiated by the light source (11) so as to be 4.060 ?m to 4.192 ?m, and a concentration calculation unit (14b) of the control device (14) for calculating the SO3 concentration by infrared spectroscopy on the basis of the output from the photodetector (13) and a reference signal from the light source control unit (14a).

Abstract: This N2O analysis device is provided with: a light source (11) which radiates laser light onto an exhaust gas (5) containing N2O, H2O and CO2; a light receiver (13) which receives the laser light that has been radiated onto the exhaust gas (5); a light source control unit (14a) of a control device (14), which controls the wavelength of the laser light radiated by the light source (11) to between 3.84 ?m and 4.00 ?m; and a signal analyzing unit (14b) of the control device (14), which calculates the N2O concentration by means of infrared spectroscopy, using the laser light received by the light receiver (13) and the laser light controlled by the light source control unit (14a) of the control device (14).

Abstract: To provide an SO3 analysis device and analysis method capable of accurately and rapidly measuring the concentration of SO3 in exhaust gas without pre-processing. The present invention is provided with a light source (11) for radiating laser light (2) to exhaust gas (1) including SO3, CO2, and H2O, a photodetector (13) for receiving the laser light (2) radiated to the exhaust gas (1), a light source control unit (14a) of a control device (14) for controlling the wavelength of the laser light (2) radiated by the light source (11) so as to be 4.060 ?m to 4.192 ?m, and a concentration calculation unit (14b) of the control device (14) for calculating the SO3 concentration by infrared spectroscopy on the basis of the output from the photodetector (13) and a reference signal from the light source control unit (14a).

Abstract: A gas analysis system includes: a laser light source for emitting a laser light to be transmitted through an analysis target gas; a photodetector configured to receive the laser light transmitted through the analysis target gas, for outputting a signal corresponding to an emission intensity of the received laser light; a gas analysis apparatus for analyzing the analysis target gas on the basis of the signal outputted from the photodetector; a variable light attenuator disposed between the analysis target gas and the laser light source; a transmitted-light amount detector configured to evaluate a transmitted light amount of the laser light transmitted through the analysis target gas on the basis of the signal outputted from the photodetector; and an attenuation amount controller configured to control an attenuation amount of the variable light attenuator on the basis of the transmitted light amount of the laser light evaluated by the transmitted-light amount detector.

Abstract: A gas analysis device includes: a measurement part configured to measure an absorption amount of a laser light including an absorption wavelength corresponding to at least two electronic level transitions having the same component contained in the combustion gas, by emitting the laser light on a plurality of measurement paths disposed to pass through the combustion gas; a standard setting part configured to set a standard gas concentration distribution and a standard temperature distribution on the basis of a measurement result of the measurement part; and an analysis part configured to obtain the gas concentration distribution and the temperature distribution by solving a function including the gas concentration distribution and the temperature distribution as variables so as to minimize a difference between the absorption amount measured by the measurement part and a standard absorption amount obtained on the basis of the standard gas concentration distribution and the standard temperature distribution.

Abstract: Provided is a photoelectric conversion device fabrication method in which current leakage from an intermediate contact layer via an intermediate-contact-layer separating groove is prevented as much as possible. Included are a step of film-forming a top layer having amorphous silicon as a main component; a step of film-forming, on the top layer, an intermediate contact layer electrically and optically connected thereto; a step of separating the intermediate contact layer by removing the intermediate contact layer by irradiating it with a pulsed laser, forming an intermediate-contact-layer separating groove that reaches the top layer; and a step of film-forming, on the intermediate contact layer and inside the intermediate-contact-layer separating groove, a bottom layer electrically and optically connected thereto and having microcrystalline silicon as a main component. A pulsed laser having a pulse width of 10 ps to 750 ps, inclusive, is used as the pulsed laser for separating the intermediate contact layer.

Abstract: An object is to obtain a high-efficiency photoelectric conversion device having a crystalline silicon i-layer in a photoelectric conversion layer. Disclosed is a fabrication method for a photoelectric conversion device that includes a step of forming, on a substrate, a photoelectric conversion layer having an i-layer formed mainly of crystalline silicon. The method includes the steps of determining an upper limit of an impurity concentration in the i-layer according to the Raman ratio of the i-layer; and forming the i-layer so as to have a value equal to or less than the determined upper limit of the impurity concentration. Alternatively, an upper limit of impurity-gas concentration in a film-formation atmosphere is determined according to the Raman ratio of the i-layer, and the i-layer is formed while controlling the impurity-gas concentration so as to have a value equal to or less than the determined upper limit.

Abstract: A vacuum treatment method and a vacuum treatment apparatus are provided in which the SiH2/SiH ratio does not increase even when the deposition rate is increased, thereby deterioration in the film quality is prevented and a high level of productivity can be achieved. A vacuum treatment method comprising the steps of heating a substrate (8) disposed inside a deposition chamber (6) under a reduced pressure atmosphere using a heat spreader (a heating device) (5), and supplying electric power to a discharge electrode (3) disposed in a position facing the substrate (8), thereby conducting a deposition on the substrate (8), wherein the deposition is conducted in a state where the temperature difference between the substrate (8) and the discharge electrode (3) is not more than 30° C. The deposition may also be conducted with the gap between the substrate (8) and the discharge electrode (3) set to not more than 7.5 mm.

Abstract: An object is to obtain a high-efficiency photoelectric conversion device having a crystalline silicon i-layer in a photoelectric conversion layer. Disclosed is a fabrication method for a photoelectric conversion device that includes a step of forming, on a substrate, a photoelectric conversion layer having an i-layer formed mainly of crystalline silicon. The method includes the steps of determining an upper limit of an impurity concentration in the i-layer according to the Raman ratio of the i-layer; and forming the i-layer so as to have a value equal to or less than the determined upper limit of the impurity concentration. Alternatively, an upper limit of impurity-gas concentration in a film-formation atmosphere is determined according to the Raman ratio of the i-layer, and the i-layer is formed while controlling the impurity-gas concentration so as to have a value equal to or less than the determined upper limit.

Abstract: A photovoltaic device that exhibits superior electric power generation efficiency due to suppression of diffusion of oxygen from a transparent electrode layer into a microcrystalline silicon p-layer. A photovoltaic device (100) comprises a transparent electrode layer (2) and one or more photovoltaic layers (3) stacked on a substrate (1), wherein at least one of the photovoltaic layers (3) comprises a p-type crystalline silicon layer (41), an i-type crystalline silicon layer (42) and an n-type silicon layer (43), and an amorphous silicon layer (7) is disposed between and adjacent to the transparent electrode layer (2) and the p-type crystalline silicon layer (41).

Abstract: A discharge chamber formed of a ridge waveguide having ridge electrodes that are disposed facing each other and that generate plasma therebetween; a gas supplying portion that is disposed adjacent to the discharge chamber and that supplies source gas, which is used to form the plasma, toward the ridge electrodes; a substrate that is disposed at a position such that the gas supplying portion is flanked by the substrate and the discharge chamber and that is subjected to the processing by the plasma; a low-pressure vessel that accommodates thereinside at least the discharge chamber, the gas supplying portion, and the substrate; and an exhaust portion that is communicated at a position in the low-pressure vessel such that this position and the gas supplying portion are disposed on either side of the discharge chamber, and that reduces the pressure inside the low-pressure vessel are provided.

Abstract: Provided is a method for fabricating a photoelectric conversion device in which current is prevented as much as possible from leaking via an intermediate contact layer separating groove. The method includes: a process of forming a top layer mainly containing amorphous silicon; a process of forming on the top layer an intermediate contact layer electrically and optically connected to the top layer; a process of removing the intermediate contact layer through irradiation with a pulsed laser and forming an intermediate contact layer separating groove that reaches the top layer to separate the intermediate contact layer; and a process of forming, on the intermediate contact layer and in the intermediate contact layer separating groove, a bottom layer that mainly contains microcrystalline silicon and that is electrically and optically connected to the intermediate contact layer. The intermediate contact layer separating groove is terminated in an i-layer of the top layer.

Abstract: Provided is a photoelectric conversion device fabrication method in which current leakage from an intermediate contact layer via an intermediate-contact-layer separating groove is prevented as much as possible. Included are a step of film-forming a top layer having amorphous silicon as a main component; a step of film-forming, on the top layer, an intermediate contact layer electrically and optically connected thereto; a step of separating the intermediate contact layer by removing the intermediate contact layer by irradiating it with a pulsed laser, forming an intermediate-contact-layer separating groove that reaches the top layer; and a step of film-forming, on the intermediate contact layer and inside the intermediate-contact-layer separating groove, a bottom layer electrically and optically connected thereto and having microcrystalline silicon as a main component. A pulsed laser having a pulse width of 10 ps to 750 ps, inclusive, is used as the pulsed laser for separating the intermediate contact layer.

Abstract: A photoelectric conversion apparatus (100) having a photovoltaic layer (3) comprising a crystalline silicon i-layer (42) formed on a large surface area substrate (1) of not less than 1 m2, wherein the crystalline silicon i-layer comprises regions in which the Raman peak ratio, which is the ratio, within the substrate (1) plane, of the Raman peak intensity of the crystalline silicon phase relative to the Raman peak intensity of the amorphous silicon phase, is within a range from not less then 3.5 to not more than 8.0, and the surface area proportion for those regions within the substrate (1) plane having a Raman peak ratio of not more than 2.5 is not more than 3%.

Abstract: A vacuum treatment method and a vacuum treatment apparatus are provided in which the SiH2/SiH ratio does not increase even when the deposition rate is increased, thereby deterioration in the film quality is prevented and a high level of productivity can be achieved. A vacuum treatment method comprising the steps of heating a substrate (8) disposed inside a deposition chamber (6) under a reduced pressure atmosphere using a heat spreader (a heating device) (5), and supplying electric power to a discharge electrode (3) disposed in a position facing the substrate (8), thereby conducting a deposition on the substrate (8), wherein the deposition is conducted in a state where the temperature difference between the substrate (8) and the discharge electrode (3) is not more than 30° C. The deposition may also be conducted with the gap between the substrate (8) and the discharge electrode (3) set to not more than 7.5 mm.

Abstract: An amorphous silicon solar cell includes a substrate, a transparent electrode formed on this substrate, a power-generating film formed on this transparent electrode, and a back-side electrode formed on this power-generating film. The power-generating film is formed by sequentially stacking p-type/i-type/n-type hydrogenated amorphous silicon layers. The defect density of the i-type hydrogenated amorphous silicon layer is less than 1015 defects/cc.