Abstract: A phototherapy device using excimer radiation in which, by skillful use of the individual peak wavelength of 308 nm and of the emission range of shorter wavelengths than 308 nm, the therapy effect is enhanced, and in which, at the same time, harm can be reduced is achieved using a XeCl excimer lamp and in which diseased sites of skin disorders are irradiated with UV-B radiation with an optical filter being used for changing the spectral shape of the UV-B radiation with which the diseased sites are irradiated.

Abstract: A phototherapy device using excimer radiation in which, by skillful use of the individual peak wavelength of 308 nm and of the emission range of shorter wavelengths than 308 nm, the therapy effect is enhanced, and in which, at the same time, harm can be reduced is achieved using a XeCl excimer lamp and in which diseased sites of skin disorders are irradiated with UV-B radiation with an optical filter being used for changing the spectral shape of the UV-B radiation with which the diseased sites are irradiated.

Abstract: A usable 13.5 nm radiation source in which Sn is the radiation substance, in which rapid transport with good reproducibility is possible up to the plasma generation site and in which formation of detrimental “debris” and coagulation of the vapor are suppressed as much as possible is achieved using emission of Sn ions in that SnH4 is supplied continuously or intermittently to the heating/ excitation part, is subjected to discharge heating and excitation or laser irradiation heating and excitation, and thus, is converted into a plasma from which extreme UV light with a main wavelength of 13.5 nm is emitted.

Abstract: A UV light source in which Xenon (Xe) gas is mixed with a substance which, in the temperature range in which 10-valent Xe ions (Xe10+) occur, emits a number of free electrons from a molecule or an atom that at least half the number of electrons which are released from a Xe atom, and which at room temperature is molecular or atomic (for example Ar, Kr, Ne, N2 and NH3). A high voltage is applied in a pulse-like manner to the electrode on the ground side and the electrode on the high voltage side to produce a plasma with a high temperature and from which extreme UV light with a wavelength of 13.5 nm is formed and emitted. The invention can also be used an extreme UV light source of the capillary, plasma focus, and Z pinch types for example.

Abstract: A flash lamp with high radiation intensity which has a discharge vessel having a part in the region between the electrodes which has a smaller diameter than the inside diameter of the discharge vessel in the area in which the cathode is located, and the inner surface of the part of smaller diameter being provided with a heat-resistant material. A xenon gas is filled into the vessel at a room temperature pressure from 1.3×103 Pa to 1.6×105 Pa or a krypton gas is filled at 7×102 Pa to 1.3×105 Pa. A power supply operates the flash lamp with a full width at half maximum of the current from 150 ?s to 2 ms and a current density in the part with a small diameter of at least 2110 A/cm2 when xenon is used and at least 2930 A/cm2 when krypton is used.

Abstract: The object of the present invention is to provide a flash lamp unit with a long service life which allows a high radiant efficiency to be obtained and a flash radiation device demonstrating excellent flash radiant performance despite a small size, and the flash lamp unit comprises a flash lamp having mercury sealed in a discharge container, wherein preheating means is provided for preheating the flash lamp, the quantity of contained mercury in the flash lamp is in the range of 0.2 to 55 mg/cm3, and the flash lamp is ignited under the specified conditions, and the flash radiation device comprises the above-described flash lamp as a light source.

Abstract: A usable 13.5 nm radiation source in which Sn is the radiation substance, in which rapid transport with good reproducibility is possible up to the plasma generation site and in which formation of detrimental “debris” and coagulation of the vapor are suppressed as much as possible is achieved using emission of Sn ions in that SnH4 is supplied continuously or intermittently to the heating/ excitation part, is subjected to discharge heating and excitation or laser irradiation heating and excitation, and thus, is converted into a plasma from which extreme UV light with a main wavelength of 13.5 nm is emitted.

Abstract: A UV light source in which Xenon (Xe) gas is mixed with a substance which, in the temperature range in which 10-valent Xe ions (Xe10+) occur, emits a number of free electrons from a molecule or an atom that at least half the number of electrons which are released from a Xe atom, and which at room temperature is molecular or atomic (for example Ar, Kr, Ne, N2 and NH3). A high voltage is applied in a pulse-like manner to the electrode on the ground side and the electrode on the high voltage side to produce a plasma with a high temperature and from which extreme UV light with a wavelength of 13.5 nm is formed and emitted. The invention can also be used an extreme UV light source of the capillary, plasma focus, and Z pinch types for example.

Abstract: The object of the present invention is to provide a flash lamp unit with a long service life which allows a high radiant efficiency to be obtained and a flash radiation device demonstrating excellent flash radiant performance despite a small size, and the flash lamp unit comprises a flash lamp having mercury sealed in a discharge container, wherein preheating means is provided for preheating the flash lamp, the quantity of contained mercury in the flash lamp is in the range of 0.