Abstract: The hereinproposed solar power unit comprises a solar energy collector made up of mirror facets and a solar energy receiver. A sun-light-sensitive surface of the receiver is exposed to a radiation flux reflected by the collector. Each facet of the collector is hermetically enclosed in a radiation-transparent convex shell filled with a reducing agent. The shells have a radius of curvature of 20 to 200 mm.

Abstract: The semiconductor photovoltaic generator comprises one or several photovoltaic converters, each of which is provided with a rectifying barrier, which separates its base region from the inversion region, and with at least two current collector contacts, one of which being connected to the base region and the other being connected to the inversion region. The operating surface of the semiconductor photovoltaic generator is covered with a protection layer which receives the direct incident radiation and passes the photoactive part of the spectrum thereof to the operating surface of the semiconductor photovoltaic generator. The protection layer comprises elements transparent to the photoactive part of the incident radiation and intermediate metal layers to protect the photovoltaic converter material from the radiation effects which are liable to damage the semiconductor and lower the performance of the semiconductor photovoltaic generator.

Abstract: A solar photoelectric module is disclosed, wherein the solar energy concentrator also performs the function of a cooling means for the photovoltaic solar energy converter. With that object in view the concentrator is made as a hollow hermetically sealed vessel filled with a transparent heat transfer agent, while the photovoltaic solar energy converter is placed inside the hollow vessel.

Abstract: A semiconductor photoelectric generator, for converting radiation energy from a source, for example, the sun, into electric energy, comprises a matrix of photo electric converters made of a semiconductor material. Each photoelectric converter is doped to form a P-N junction and an isotype junction. Current-collecting conductors are connected to a base region and to an alloy region. An operating surface of the semiconductor photoelectric generator is secured by a translucent adhesive layer to a coating exposed directly to radiation from a radiation source. The coating is composed of optical concentrators which focus the radiation energy in a focal spot and are disposed on the operating surface so that the absorption band of the focussed radiation in the focal spot is located in the base region and is spaced from the P-N junction by a distance not exceeding the diffusion length of the minority carriers in the base region.