Patents by Inventor Tauno VÄHÄ-HEIKKILÄ

Tauno VÄHÄ-HEIKKILÄ has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11548779
    Abstract: A micro structure with a substrate having a top surface; a first electrode with a horizontal orientation parallel to the top surface of the substrate, wherein the first electrode is embedded within the substrate so that a top surface of the first electrode coincides with the top surface of the substrate; a dielectric layer arranged on the top surface of the first electrode; and a second electrode arranged above the dielectric layer.
    Type: Grant
    Filed: June 15, 2018
    Date of Patent: January 10, 2023
    Assignee: Teknologian Tutkimuskeskus VTT Oy
    Inventors: Hannu Kattelus, Tauno Vähä-Heikkilä
  • Patent number: 11486900
    Abstract: A probe apparatus of a millimeter or submillimeter radio frequency band comprises transition layers having outermost layers on opposite surfaces of the probe apparatus. An internal transition cavity extends through the transition layers for guiding electromagnetic radiation within the probe apparatus. A probe layer disposed between the transition layers, the probe layer having a lateral transmission line for interacting with the electromagnetic radiation guided by the internal transmission cavity.
    Type: Grant
    Filed: May 22, 2018
    Date of Patent: November 1, 2022
    Assignee: TEKNOLOGIAN TUTKIMUSKESKUS VTT OY
    Inventors: Vladimir Ermolov, Antti Lamminen, Jussi Säily, Tauno Vähä-Heikkilä, Pekka Rantakari
  • Publication number: 20220301968
    Abstract: A semiconductor apparatus having a silicon substrate layer at least portion of which is doped with dopants of a conductivity type; and at least one insulator layer formed above the silicon substrate layer, wherein the at least one insulator layer and the dopants of the silicon substrate layer have opposite electric charges.
    Type: Application
    Filed: June 8, 2022
    Publication date: September 22, 2022
    Applicant: Teknologian tutkimuskeskus VTT Oy
    Inventors: Heikki VILJANEN, Pekka RANTAKARI, Tauno VÄHÄ-HEIKKILÄ, Esa TUOVINEN
  • Patent number: 11380600
    Abstract: A semiconductor apparatus having a silicon substrate layer at least portion of which is doped with dopants of a conductivity type; and at least one insulator layer formed above the silicon substrate layer, wherein the at least one insulator layer and the dopants of the silicon substrate layer have opposite electric charges.
    Type: Grant
    Filed: May 28, 2018
    Date of Patent: July 5, 2022
    Assignee: Teknologian tutkimuskeskus VTT Oy
    Inventors: Heikki Viljanen, Pekka Rantakari, Tauno Vähä-Heikkilä, Esa Tuovinen
  • Publication number: 20220022756
    Abstract: According to an example aspect of the present invention, there is provided image units for vital sign monitoring by a multichannel radar scanning a field-of-view and a microwave imaging radiometer sounding the field-of-view. Presence of moving targets within the field-of-view of the radar is determined on the basis of phase and/or amplitude changes of the image units between scans. Thermal information or information determined based on the thermal information obtained by the sounding is combined with the image units of the moving targets. In this way vital signs may be monitored based on movement and thermal information of the image units.
    Type: Application
    Filed: December 3, 2019
    Publication date: January 27, 2022
    Inventors: Tero Kiuru, Mikko Metso, Mervi Hirvonen, Tauno Vähä-Heikkilä
  • Publication number: 20200180943
    Abstract: A micro structure with a substrate having a top surface; a first electrode with a horizontal orientation parallel to the top surface of the substrate, wherein the first electrode is embedded within the substrate so that a top surface of the first electrode coincides with the top surface of the substrate; a dielectric layer arranged on the top surface of the first electrode; and a second electrode arranged above the dielectric layer.
    Type: Application
    Filed: June 15, 2018
    Publication date: June 11, 2020
    Inventors: Hannu KATTELUS, Tauno VÄHÄ-HEIKKILÄ
  • Publication number: 20200158757
    Abstract: A probe apparatus of a millimeter or submillimeter radio frequency band comprises transition layers having outermost layers on opposite surfaces of the probe apparatus. An internal transition cavity extends through the transition layers for guiding electromagnetic radiation within the probe apparatus. A probe layer disposed between the transition layers, the probe layer having a lateral transmission line for interacting with the electromagnetic radiation guided by the internal transmission cavity.
    Type: Application
    Filed: May 22, 2018
    Publication date: May 21, 2020
    Inventors: Vladimir ERMOLOV, Antti LAMMINEN, Jussi SÄILY, Tauno VÄHÄ-HEIKKILÄ, Pekka RANTAKARI
  • Publication number: 20200152537
    Abstract: A semiconductor apparatus having a silicon substrate layer at least portion of which is doped with dopants of a conductivity type; and at least one insulator layer formed above the silicon substrate layer, wherein the at least one insulator layer and the dopants of the silicon substrate layer have opposite electric charges.
    Type: Application
    Filed: May 28, 2018
    Publication date: May 14, 2020
    Inventors: Heikki VILJANEN, Pekka RANTAKARI, Tauno VÄHÄ-HEIKKILÄ, Esa TUOVINEN