Patents by Inventor Tawalin Opastrakoon
Tawalin Opastrakoon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11923030Abstract: A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including initiating a read operation with respect to a block of the memory device, selecting, based on a set of criteria, a default read offset from a set of read offsets, wherein the set of criteria includes at least one of: a parameter related to trigger rate, or an amount of time that an open block is allowed to remain open to control threshold voltage shift due to storage charge loss, and applying the default read offset to a read operation performed with respect to the block.Type: GrantFiled: August 16, 2022Date of Patent: March 5, 2024Assignee: Micron Technology, Inc.Inventors: Gary F. Besinga, Renato C. Padilla, Tawalin Opastrakoon, Sampath K. Ratnam, Michael G. Miller, Christopher M. Smitchger, Vamsi Pavan Rayaprolu, Ashutosh Malshe
-
Publication number: 20240069730Abstract: A method can include identifying one or more candidate memory blocks that are available for garbage collection, determining a respective erase depth level for each candidate memory block based on one or more block characteristics of the candidate memory block, erasing the candidate memory blocks, wherein each of the candidate memory blocks is erased in accordance with the respective erase depth level determined for the candidate memory block, receiving a request to write data subsequent to erasing the candidate memory blocks, and, responsive to receiving the request to write data, selecting a first memory block from the erased candidate memory blocks in accordance with the respective erase depth level of each of the erased candidate memory blocks. The block characteristics of the candidate memory block can include a program erase count and/or a temperature of the candidate memory block.Type: ApplicationFiled: July 19, 2023Publication date: February 29, 2024Inventors: Sriteja Yamparala, Tawalin Opastrakoon
-
Publication number: 20230393922Abstract: Respective error handling (EH) flags can be set based at least in part on media management data of a memory device. Whether any of the EH flags are set can be determined. In response to determining that at least one of the EH flags is set, a subset of a plurality of operations of an EH flow associated with the set EH flags can be performed.Type: ApplicationFiled: October 14, 2022Publication date: December 7, 2023Inventors: Sampath K. Ratnam, Sean Brasfield, Gary F. Besinga, Michael G. Miller, Renato C. Padilla, Tawalin Opastrakoon
-
Publication number: 20230266890Abstract: Various embodiments of the present disclosure relate to monitoring the integrity of power signals within memory systems. A method can include receiving a power signal at a memory component, and monitoring, via a power signal monitoring component of the memory component, an integrity characteristic of the power signal. Responsive to the integrity characteristic meeting a particular criteria, the method can include providing a status indication to a control component external to the memory component.Type: ApplicationFiled: February 22, 2022Publication date: August 24, 2023Inventors: Sriteja Yamparala, Fulvio Rori, Marco Domenico Tiburzi, Walter Di Francesco, Chiara Cerafogli, Tawalin Opastrakoon
-
Patent number: 11715541Abstract: A method includes associating each block of a plurality of blocks of a memory device with a corresponding frequency access group of a plurality of frequency access groups based on corresponding access frequencies, and performing scan operations on blocks of each of the plurality of frequency access groups using a scan frequency that is different from scan frequencies of other frequency access groups. A scan operation performed on a frequency access group with a higher access frequency uses a higher scan frequency than a scan operation performed on a frequency access group with a lower access frequency.Type: GrantFiled: July 18, 2022Date of Patent: August 1, 2023Assignee: Micron Technology, Inc.Inventors: Renato C. Padilla, Sampath K. Ratnam, Christopher M. Smitchger, Vamsi Pavan Rayaprolu, Gary F. Besinga, Michael G. Miller, Tawalin Opastrakoon
-
Patent number: 11715531Abstract: A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including identifying an amount of storage charge loss (SCL) that has occurred on an open block of the memory device, the open block having one or more erased pages, determining that the amount of SCL satisfies a threshold criterion corresponding to an acceptable amount of SCL to occur on the open block, and responsive to determining that the amount of SCL satisfies the threshold criterion, keeping the open block open for programming the one or more erased pages.Type: GrantFiled: March 24, 2021Date of Patent: August 1, 2023Assignee: Micron Technology, Inc.Inventors: Christopher M. Smitchger, Gary F. Besinga, Renato C. Padilla, Tawalin Opastrakoon, Sampath K. Ratnam, Michael G. Miller, Vamsi Pavan Rayaprolu, Ashutosh Malshe
-
Patent number: 11687452Abstract: An amount of threshold voltage distribution shift is determined. The threshold voltage distribution shift corresponds to an amount of time after programming of a reference page of a block of a memory device. A program-verify voltage is adjusted based on the amount of threshold voltage distribution shift to obtain an adjusted program-verify voltage. Using the adjusted program-verify voltage, a temporally subsequent page of the block is programmed at a time corresponding to the amount of time after the programming of the reference page.Type: GrantFiled: December 16, 2020Date of Patent: June 27, 2023Assignee: Micron Technology, Inc.Inventors: Gary F. Besinga, Renato C. Padilla, Tawalin Opastrakoon, Sampath K. Ratnam, Michael G. Miller, Christopher M. Smitchger, Vamsi Pavan Rayaprolu, Ashutosh Malshe
-
Publication number: 20230049877Abstract: A first host data item and a second host data item are received. The first host data item is stored in a first page of a first logical unit of a memory device, where the first page is one of a plurality of pages associated with redundancy metadata. A second page a second page of a second logical unit of the memory device is identified, where the second page is one of the plurality of pages associated with the redundancy metadata, and the first page and the second page are associated with different wordlines of the memory device. The second host data item is stored in the second page of the second logical unit of the memory device. The first page and the second page can be associated with a fault tolerant stripe that includes the redundancy metadata.Type: ApplicationFiled: October 31, 2022Publication date: February 16, 2023Inventors: Tawalin Opastrakoon, Renato C. Padilla, Michael G. Miller, Christopher M. Smitchger, Gary F. Besinga, Sampath K. Ratnam, Vamsi Pavan Rayaprolu
-
Publication number: 20220391127Abstract: A plurality of host data items, including a first host data item and a second host data item, are received. The second host data item consecutively follows the first host data item. The first host data item is stored in a first page of a first logical unit of the memory device, wherein the first page is associated with a first page number. A second page number is determined for the second host data item based on an offset value that corresponds to a number of pages per wordline of the memory device. A second logical unit of the memory device is identified. The second host data item is stored in a second page of the second logical unit, wherein the second page is identified by the second page number, and the first page and the second page are associated with a fault-tolerant stripe.Type: ApplicationFiled: June 4, 2021Publication date: December 8, 2022Inventors: Tawalin Opastrakoon, Renato C. Padilla, Michael G. Miller, Christopher M. Smitchger, Gary F. Besinga, Sampath K. Ratnam, Vamsi Pavan Rayaprolu
-
Publication number: 20220392561Abstract: A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including initiating a read operation with respect to a block of the memory device, selecting, based on a set of criteria, a default read offset from a set of read offsets, wherein the set of criteria includes at least one of: a parameter related to trigger rate, or an amount of time that an open block is allowed to remain open to control threshold voltage shift due to storage charge loss, and applying the default read offset to a read operation performed with respect to the block.Type: ApplicationFiled: August 16, 2022Publication date: December 8, 2022Inventors: Gary F. Besinga, Renato C. Padilla, Tawalin Opastrakoon, Sampath K. Ratnam, Michael G. Miller, Christopher M. Smitchger, Vamsi Pavan Rayaprolu, Ashutosh Malshe
-
Patent number: 11507304Abstract: A plurality of host data items, including a first host data item and a second host data item, are received. The second host data item consecutively follows the first host data item. The first host data item is stored in a first page of a first logical unit of the memory device, wherein the first page is associated with a first page number. A second page number is determined for the second host data item based on an offset value that corresponds to a number of pages per wordline of the memory device. A second logical unit of the memory device is identified. The second host data item is stored in a second page of the second logical unit, wherein the second page is identified by the second page number, and the first page and the second page are associated with a fault-tolerant stripe.Type: GrantFiled: June 4, 2021Date of Patent: November 22, 2022Assignee: MICRON TECHNOLOGY, INC.Inventors: Tawalin Opastrakoon, Renato C. Padilla, Michael G. Miller, Christopher M. Smitchger, Gary F. Besinga, Sampath K. Ratnam, Vamsi Pavan Rayaprolu
-
Publication number: 20220351796Abstract: A method includes associating each block of a plurality of blocks of a memory device with a corresponding frequency access group of a plurality of frequency access groups based on corresponding access frequencies, and performing scan operations on blocks of each of the plurality of frequency access groups using a scan frequency that is different from scan frequencies of other frequency access groups. A scan operation performed on a frequency access group with a higher access frequency uses a higher scan frequency than a scan operation performed on a frequency access group with a lower access frequency.Type: ApplicationFiled: July 18, 2022Publication date: November 3, 2022Inventors: Renato C. Padilla, Sampath K. Ratnam, Christopher M. Smitchger, Vamsi Pavan Rayaprolu, Gary F. Besinga, Michael G. Miller, Tawalin Opastrakoon
-
Publication number: 20220310183Abstract: A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including identifying an amount of storage charge loss (SCL) that has occurred on an open block of the memory device, the open block having one or more erased pages, determining that the amount of SCL satisfies a threshold criterion corresponding to an acceptable amount of SCL to occur on the open block, and responsive to determining that the amount of SCL satisfies the threshold criterion, keeping the open block open for programming the one or more erased pages.Type: ApplicationFiled: March 24, 2021Publication date: September 29, 2022Inventors: Christopher M. Smitchger, Gary F. Besinga, Renato C. Padilla, Tawalin Opastrakoon, Sampath K. Ratnam, Michael G. Miller, Vamsi Pavan Rayaprolu, Ashutosh Malshe
-
Publication number: 20220310190Abstract: A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including receiving a set of read offsets for a block of the memory device, the set of read offsets comprising a default read offset, selecting the default read offset from the set of read offsets based on one or more criteria, applying the default read offset to a read operation performed with respect to the block, determining that a second set of criteria associated with removing the default read offset is satisfied, and removing the default read offset responsive to determining that the second set of criteria is satisfied.Type: ApplicationFiled: March 25, 2021Publication date: September 29, 2022Inventors: Gary F. Besinga, Renato C. Padilla, Tawalin Opastrakoon, Sampath K. Ratnam, Michael G. Miller, Christopher M. Smitchger, Vamsi Pavan Rayaprolu, Ashutosh Malshe
-
Patent number: 11456051Abstract: A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including receiving a set of read offsets for a block of the memory device, the set of read offsets comprising a default read offset, selecting the default read offset from the set of read offsets based on one or more criteria, applying the default read offset to a read operation performed with respect to the block, determining that a second set of criteria associated with removing the default read offset is satisfied, and removing the default read offset responsive to determining that the second set of criteria is satisfied.Type: GrantFiled: March 25, 2021Date of Patent: September 27, 2022Assignee: Micron Technology, Inc.Inventors: Gary F. Besinga, Renato C. Padilla, Tawalin Opastrakoon, Sampath K. Ratnam, Michael G. Miller, Christopher M. Smitchger, Vamsi Pavan Rayaprolu, Ashutosh Malshe
-
Publication number: 20220284974Abstract: A configuration setting manager of a memory device receives a request to perform an adjustment operation on a set of configuration setting values for the memory device, where each configuration setting value of the set of configuration setting values is stored in a corresponding configuration register of a set of configuration registers; determines a configuration adjustment definition associated with one or more configuration setting values of the set of configuration setting values; calculates an updated set of configuration setting values by applying a multiplier value to the configuration adjustment definition, wherein the multiplier value is associated with a number of programming operations performed on the memory device; and stores the updated set of configuration setting values in the corresponding configuration registers.Type: ApplicationFiled: March 2, 2021Publication date: September 8, 2022Inventors: Tawalin Opastrakoon, Renato C. Padilla, Vamsi Pavan Rayaprolu, Sampath K. Ratnam, Michael G. Miller, Gary F. Besinga, Christopher M. Smitchger
-
Patent number: 11393548Abstract: In one embodiment, a system maintains metadata associating each block of a plurality of blocks of the memory device with a corresponding frequency access group, where each frequency access group is associated with a corresponding scan frequency. The system determines that a first predetermined time period has elapsed since a last scan operation performed with respect to one or more blocks of the memory device, where the first predetermined time period specifies a first scan frequency. The system selects, based on the metadata, at least one block from a first frequency access group associated with the first scan frequency. The system performs a scan operation with respect to the selected block.Type: GrantFiled: December 18, 2020Date of Patent: July 19, 2022Assignee: Micron Technology, Inc.Inventors: Renato C. Padilla, Sampath K. Ratnam, Christopher M. Smitchger, Vamsi Pavan Rayaprolu, Gary F. Besinga, Michael G. Miller, Tawalin Opastrakoon
-
Publication number: 20220199179Abstract: In one embodiment, a system maintains metadata associating each block of a plurality of blocks of the memory device with a corresponding frequency access group, where each frequency access group is associated with a corresponding scan frequency. The system determines that a first predetermined time period has elapsed since a last scan operation performed with respect to one or more blocks of the memory device, where the first predetermined time period specifies a first scan frequency. The system selects, based on the metadata, at least one block from a first frequency access group associated with the first scan frequency. The system performs a scan operation with respect to the selected block.Type: ApplicationFiled: December 18, 2020Publication date: June 23, 2022Inventors: Renato C. Padilla, Sampath K. Ratnam, Christopher M. Smitchger, Vamsi Pavan Rayaprolu, Gary F. Besinga, Michael G. Miller, Tawalin Opastrakoon
-
Publication number: 20220188226Abstract: An amount of threshold voltage distribution shift is determined. The threshold voltage distribution shift corresponds to an amount of time after programming of a reference page of a block of a memory device. A program-verify voltage is adjusted based on the amount of threshold voltage distribution shift to obtain an adjusted program-verify voltage. Using the adjusted program-verify voltage, a temporally subsequent page of the block is programmed at a time corresponding to the amount of time after the programming of the reference page.Type: ApplicationFiled: December 16, 2020Publication date: June 16, 2022Inventors: Gary F. Besinga, Renato C. Padilla, Tawalin Opastrakoon, Sampath K. Ratnam, Michael G. Miller, Christopher M. Smitchger, Vamsi Pavan Rayaprolu, Ashutosh Malshe