Abstract: Methods and apparatus to provide per die temperature programming for thermally efficient integrated circuit (IC) operation are described. In some embodiments, the junction temperature of an IC component is determined, e.g., to reduce power consumption and/or improve performance. Other embodiments are also described.

Abstract: Methods and apparatus to provide per die temperature programming for thermally efficient integrated circuit (IC) operation are described. In some embodiments, the junction temperature of an IC component is determined, e.g., to reduce power consumption and/or improve performance. Other embodiments are also described.

Abstract: Methods and apparatus to provide per die temperature programming for thermally efficient integrated circuit (IC) operation are described. In some embodiments, the junction temperature of an IC component is determined, e.g., to reduce power consumption and/or improve performance. Other embodiments are also described.

Abstract: Methods and apparatus to provide per die voltage programming for energy efficient integrated circuit (IC) operation are described. In some embodiments, the voltage potential supplied to an IC component is lowered below a peak performance voltage level, e.g., to reduce power consumption by the component. Other embodiments are also described.

Abstract: Methods and apparatus to provide per die voltage programming for energy efficient integrated circuit (IC) operation are described. In some embodiments, the voltage potential supplied to an IC component is lowered below a peak performance voltage level, e.g., to reduce power consumption by the component. Other embodiments are also described.

Abstract: Methods and apparatus to provide per die temperature programming for thermally efficient integrated circuit (IC) operation are described. In some embodiments, the junction temperature of an IC component is determined, e.g., to reduce power consumption and/or improve performance. Other embodiments are also described.

Abstract: Systems for testing a plurality of integrated circuits at a plurality of frequencies and voltages is disclosed. In one embodiment, a plurality of integrated circuits is tested at least once within a predetermined set of combinations of frequencies and voltages. If the integrated circuit fails testing within any combination of a frequency and voltage within the predetermined set, the integrated circuit is retested at a different predetermined set of combinations of frequencies and voltages. If the integrated circuit fails testing within any combination of a frequency and voltage within the different predetermined set, the integrated circuit is discarded.

Abstract: An on-die device is provided to measure/detect voltage fluctuations. This may include a control unit to generate differential reference signals (such as differential current signals), a first detector unit and a second detector unit. The differential reference signals may be generated based on a Vcc reference signal and a Vss reference signal. The first detector unit may receive the differential reference signals from the control unit and may receive first voltage signals (also called monitored signals) from a first device under test (DUT) located on the die or from a first area on the die. The first detector unit may provide (or output) a first signal indicative of a voltage fluctuation (voltage droop or overshoot) of the first voltage signals. The second detector unit may receive the differential reference signals from the control unit and may receive second voltage signals (also called monitored signals) from a second device under test (DUT) located on the die.

Abstract: A method and apparatus are provided for adjusting a frequency of a die. This may include measuring characteristics of a die at various combinations of power supply voltage, body bias voltage and/or temperature and determining operating characteristics, such as power supply voltage and body bias voltage, based on the measured characteristics.

Abstract: An on-die temperature control variable is provided to throttle a thermal actuator for cooling an integrated circuit. The integrated circuit includes a storage element to hold the temperature control variable. A temperature sensor is thermally coupled to the integrated circuit to sense an operating temperature of the integrated circuit. A thermal controller is communicatively coupled to the storage element and to the temperature sensor. The thermal controller throttles the thermal actuator when the temperature sensor indicates that the operating temperature of the integrated circuit is below the temperature control variable.

Abstract: Arrangements having integrated circuit (IC) voltage and thermal resistance designated on a per IC basis.

Abstract: Arrangements having integrated circuit (IC) voltage and thermal resistance designated on a per IC basis.

Abstract: An on-die temperature control variable is provided to throttle a thermal actuator for cooling an integrated circuit. The integrated circuit includes a storage element to hold the temperature control variable. A temperature sensor is thermally coupled to the integrated circuit to sense an operating temperature of the integrated circuit. A thermal controller is communicatively coupled to the storage element and to the temperature sensor. The thermal controller throttles the thermal actuator when the temperature sensor indicates that the operating temperature of the integrated circuit is below the temperature control variable.

Abstract: Some embodiments of the invention include apparatus and systems having integrated circuits. Terminals or pins of the integrated circuits are configured to be driven to a state, to be floated for a time interval, and to be measured to determine the state of the terminals after the time interval. The measurement involves sampling the RC time constant of leakage current of the terminals. Other embodiments are described and claimed.

Abstract: Arrangements having integrated circuit (IC) voltage and thermal resistance designated on a per IC basis.

Abstract: Arrangements having integrated circuit (IC) voltage and thermal resistance designated on a per IC basis.

Abstract: A method and apparatus are provided to power a processor coupled to a package. This may include determining a type of processor coupled to the package and adjusting characteristics of a load line to power the processor based on the determined type of processor.

Abstract: An on-die device is provided to measure/detect voltage fluctuations. This may include a control unit to generate differential reference signals (such as differential current signals), a first detector unit and a second detector unit. The differential reference signals may be generated based on a Vcc reference signal and a Vss reference signal. The first detector unit may receive the differential reference signals from the control unit and may receive first voltage signals (also called monitored signals) from a first device under test (DUT) located on the die or from a first area on the die. The first detector unit may provide (or output) a first signal indicative of a voltage fluctuation (voltage droop or overshoot) of the first voltage signals. The second detector unit may receive the differential reference signals from the control unit and may receive second voltage signals (also called monitored signals) from a second device under test (DUT) located on the die.

Abstract: An on-die device is provided to measure/detect voltage fluctuations. This may include a control unit to generate differential reference signals (such as differential current signals), a first detector unit and a second detector unit. The differential reference signals may be generated based on a Vcc reference signal and a Vss reference signal. The first detector unit may receive the differential reference signals from the control unit and may receive first voltage signals (also called monitored signals) from a first device under test (DUT) located on the die or from a first area on the die. The first detector unit may provide (or output) a first signal indicative of a voltage fluctuation (voltage droop or overshoot) of the first voltage signals. The second detector unit may receive the differential reference signals from the control unit and may receive second voltage signals (also called monitored signals) from a second device under test (DUT) located on the die.

Abstract: Arrangements having integrated circuit (IC) voltage and thermal resistance designated on a per IC basis.