Abstract: A storage device system receives read commands from a host device and maintains a read disturb count for distinct zones of each of a plurality of non-volatile memory blocks in the storage device. The read disturb count for each zone corresponds to read operations performed in the zone and in predefined memory portions neighboring the zone. In accordance with a determination that the read disturb count for any zone satisfies predefined threshold criteria, the storage device performs a validation operation on one or more memory portions corresponding to that zone. If the validation operation is unsuccessful, the storage device resets the read disturb count for the zone and initiates a refresh operation on at least a portion of the corresponding block. If the validation operation is successful, the storage device resets the read disturb count for the zone that satisfied the predefined threshold criteria, and forgoes initiating the refresh operation.