Abstract: A display device includes: a light-emitting element including a first electrode and a second electrode overlapping each other in a plan view, and a light-emitting layer placed between the first electrode and the second electrode; a third electrode capable of forming an electrical field between the second electrode and the third electrode; and an optical adjustment element overlapping the light-emitting layer in a plan view and having light transmittance that changes in accordance with a potential difference between the second electrode and the third electrode.

Abstract: A display device includes: a TFT substrate including a thin film transistor; a light-emitting element including a first electrode and a second electrode overlapping each other in a plan view, and a light-emitting layer placed between the first electrode and the second electrode; a third electrode capable of forming an electrical field between the second electrode and the third electrode; an optical adjustment element overlapping the light-emitting layer in a plan view and having an optical characteristic that changes in accordance with a potential difference between the second electrode and the third electrode; and light scattering bodies included in at least one of the TFT substrate, the light-emitting element, and the optical adjustment element.

Abstract: A light-emitting device, includes: a substrate transparent to light a first light-emitting layer provided above the substrate and containing first quantum dots configured to emit a first light a second light-emitting layer provided above the substrate and configured to emit a second light shorter in wavelength than the first light a pair of first color-correcting layers each correspondingly provided to one of above or below the first light-emitting layer to overlap with at least a portion of the first light-emitting layer in plan view, transmitting the first light, and absorbing light shorter in wavelength than the first light and a pair of second color-correcting layers each correspondingly provided to one of above or below the second light-emitting layer to overlap with the second light-emitting layer in plan view, transmitting the second light, and absorbing light longer in wavelength than the second light.

Abstract: A light-emitting device emits light in a first direction and also emits light in a second direction opposite to the first direction. The light-emitting device includes a first light-emitting layer configured to emit light of a first color, and a second light-emitting layer configured to emit light of a second color different from the first color. The first light-emitting layer and the second light-emitting layer overlap each other as viewed from the first direction. The light-emitting device reduces a difference in tinge between emission light in the first direction and emission light in the second direction.

Abstract: A display device includes a substrate and a pixel provided on the substrate. The pixel includes a light-emitting portion including a plurality of light-emitting elements and configured to generate light, and a light-exiting portion adjacent to the light-emitting portion. The light-exiting portion includes a first light-reflecting portion provided on an incline on the substrate and configured to receive and reflect the light from the light-emitting portion, and an opening configured to emit the light reflected by the first light-reflecting portion to the outside. At least some of the plurality of light-emitting elements are formed by being layered.

Abstract: A light-emitting device includes, on a substrate, a red pixel electrode and a green pixel electrode, a common electrode, and a blue pixel electrode, in order from the substrate side, and includes a transparent region adjacent to a light-emitting region including a position overlapping the red light-emitting layer, the green light-emitting layer, and the blue light-emitting layer in a plan view. At least a part of the blue light-emitting layer overlaps the red light-emitting layer and the green light-emitting layer adjacent to the red light-emitting layer in the plan view.

Abstract: A light-emitting device of a transmissive type includes, as subpixels, a red subpixel including a red light-emitting layer, a green subpixel including a green light-emitting layer, and a blue subpixel including a blue light-emitting layer arranged in parallel with one another. The display light-emitting device includes an opaque region that overlaps at least the red subpixel and the green subpixel, each in its entirety, in a plan view and blocks background light, and a transparent region that overlaps at least a portion of the blue subpixel in a plan view and transmits background light.

Abstract: An infrared photodetection device (10) includes a detection unit (1) and a calculation unit (3). The detection unit (1) detects infrared light in a particular, first wavelength range. The calculation section (3) calculates an optical signal component detected by the detection unit 1 from a detection value of the detection unit (1) and a thermal signal component representing an amount of change of a thermal signal caused by a rise in temperature when infrared light is incident on the detection unit (1), and calculates the temperature of a measurement object (30) from the calculated optical signal component and the calculated thermal signal component.

Abstract: Provided is a camera capable of accurately calculating a foreground image. An infrared camera includes: a first detection unit including a plurality of first detection elements configured to detect an electromagnetic wave having a first wavelength range; a second detection unit including a plurality of second detection elements capable of detecting an electromagnetic wave emitted from an inside of a housing, wherein the electromagnetic wave having at least one of wavelengths within a second wavelength range; a first transparent member disposed to correspond to the second detection elements is transparent for the second wavelength range; a second transparent member transparent for a third wavelength range from an outside to the inside of the housing; and the first wavelength range including at least one wavelength overlapping a wavelength within the third wavelength range, and the second wavelength range not overlapping the third wavelength range.

Abstract: An infrared photodetection system is provided that is capable of measuring infrared light up to high-temperature regions while improving a temperature resolution for low-temperature regions without increasing image-acquisition time even if the measuring temperature range varies. The infrared photodetection system is set up to exhibit sensitivity spectrum SSP1 for high sensitivity (for low temperature use) and sensitivity spectrum SSP2 for low sensitivity (for high temperature use) in the transmission band of the bandpass filter when different voltages are applied to a quantum-dot infrared photodetector. The infrared photodetection system then integrates temperature data for the infrared light detected using sensitivity spectrum SSP1 and temperature data for the infrared light detected using sensitivity spectrum SSP2, in order to output a temperature distribution in a measurement region.

Abstract: Infrared detection systems according to embodiments include an infrared detector, a storage, and a correction calculator. The infrared detector is configured to detect infrared light by absorbing and photoelectrically converting infrared light of a specific wavelength range. The infrared detector is capable of sweeping an absorption peak wavelength of an absorption spectrum of infrared light. The storage is configured to store a plurality of correction coefficients for correcting a detection value from the infrared detector in accordance with the absorption peak wavelength of the infrared detector with respect to a wavelength range of an atmospheric window. The correction calculator corrects the detection value from the infrared detector for each absorption peak wavelength using corresponding correction coefficients stored in the storage.

Abstract: There is provided a detector, and a method of calibrating or correcting a detection value in a wavelength range within an evaluable range by using a detection value in a wavelength range other than the evaluable range by using the detector. The detector includes an active layer containing a quantum well or quantum dots, and that is capable of sweeping a detection peak wavelength of a detection spectrum in a wavelength range within an evaluable range and a wavelength range other than the evaluable range, and is configured to correct or calibrate a detection value in the wavelength range within the evaluable range using a detection value in the wavelength range other than the evaluable range.

Abstract: A detector includes an active layer containing a quantum well or quantum dots and the detector can shift a detection wavelength by applying a voltage to the active layer. The detector has a reference wavelength to be referred to as a criterion for calibration or correction of the detection wavelength within a range in which the detection wavelength is shifted. A method of calibrating or correcting with the detector, a detection wavelength with the reference wavelength being defined as the criterion is provided.

Abstract: An infrared photodetection system is provided that is capable of measuring infrared light up to high-temperature regions while improving a temperature resolution for low-temperature regions without increasing image-acquisition time even if the measuring temperature range varies. The infrared photodetection system is set up to exhibit sensitivity spectrum SSP1 for high sensitivity (for low temperature use) and sensitivity spectrum SSP2 for low sensitivity (for high temperature use) in the transmission band of the bandpass filter when different voltages are applied to a quantum-dot infrared photodetector. The infrared photodetection system then integrates temperature data for the infrared light detected using sensitivity spectrum SSP1 and temperature data for the infrared light detected using sensitivity spectrum SSP2, in order to output a temperature distribution in a measurement region.

Abstract: There is provided a detector, and a method of calibrating or correcting a detection value in a wavelength range within an evaluable range by using a detection value in a wavelength range other than the evaluable range by using the detector. The detector includes an active layer containing a quantum well or quantum dots, and that is capable of sweeping a detection peak wavelength of a detection spectrum in a wavelength range within an evaluable range and a wavelength range other than the evaluable range, and is configured to correct or calibrate a detection value in the wavelength range within the evaluable range using a detection value in the wavelength range other than the evaluable range.

Abstract: Interference noise is eliminated and fitting accuracy is enhanced. A spectrum analysis apparatus includes an electromagnetic wave source configured to emit an electromagnetic wave having a wavelength from 0.1 mm to 10 mm, a spectrometer a detecting section configured to detect an emitted electromagnetic wave that exits from the measurement object, the wave being transmitted through or reflected by the measurement object, and to generate a detection signal; and an analyzing section configured to analyze the detection signal. The analyzing section has a noise eliminating unit configured to generate a noise eliminated signal by eliminating from the detection signal a round-trip electromagnetic wave having reciprocated twice or more inside the measurement object and then emitted from the measurement object, in the emitted electromagnetic wave.

Abstract: A quantum dot infrared detector includes a photoelectric conversion layer. The photoelectric conversion layer includes a quantum dot stacked structure in which quantum dot layers are stacked, each quantum dot layer including at least quantum dots, a underlayer for the quantum dots, and a partial cap layer at least partially covering the quantum dots. The underlayer is AlxGa1-xAs (0?x<1), and the partial cap layer is AlyGa1-yAs (0?y<1). When the lower of x and y is represented by z and a size of the quantum dots in a direction perpendicular to a stacking direction of the quantum dot stacked structure is represented by R (nm), z satisfies z?0.14×R?1.6, and the size of the quantum dots in the stacking direction is less than or equal to 0.5R.

Abstract: Infrared detection systems according to embodiments include an infrared detector, a storage, and a correction calculator. The infrared detector is configured to detect infrared light by absorbing and photoelectrically converting infrared light of a specific wavelength range. The infrared detector is capable of sweeping an absorption peak wavelength of an absorption spectrum of infrared light. The storage is configured to store a plurality of correction coefficients for correcting a detection value from the infrared detector in accordance with the absorption peak wavelength of the infrared detector with respect to a wavelength range of an atmospheric window. The correction calculator corrects the detection value from the infrared detector for each absorption peak wavelength using corresponding correction coefficients stored in the storage.

Abstract: Interference noise is eliminated and fitting accuracy is enhanced. A spectrum analysis apparatus includes an electromagnetic wave source configured to emit an electromagnetic wave having a wavelength from 0.1 mm to 10 mm, a spectrometer a detecting section configured to detect an emitted electromagnetic wave that exits from the measurement object, the wave being transmitted through or reflected by the measurement object, and to generate a detection signal; and an analyzing section configured to analyze the detection signal. The analyzing section has a noise eliminating unit configured to generate a noise eliminated signal by eliminating from the detection signal a round-trip electromagnetic wave having reciprocated twice or more inside the measurement object and then emitted from the measurement object, in the emitted electromagnetic wave.

Abstract: A detector includes an active layer containing a quantum well or quantum dots and the detector can shift a detection wavelength by applying a voltage to the active layer. The detector has a reference wavelength to be referred to as a criterion for calibration or correction of the detection wavelength within a range in which the detection wavelength is shifted. A method of calibrating or correcting with the detector, a detection wavelength with the reference wavelength being defined as the criterion is provided.