Patents by Inventor Te-An Lin

Te-An Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240105725
    Abstract: An integrated circuit includes a complimentary field effect transistor (CFET). The CFET includes a first transistor and a second transistor stacked vertically. A conductive via extends vertically from a first source/drain region of the first transistor past the second transistor. The second transistor includes an asymmetric second source/drain region. The asymmetry of the second source/drain region helps ensure that the second source/drain region does not contact the conductive via.
    Type: Application
    Filed: March 30, 2023
    Publication date: March 28, 2024
    Inventors: Gerben Doornbos, Marcus Johannes Henricus Van Dal, Szuya Liao, Chung-Te Lin
  • Publication number: 20240105844
    Abstract: A native NMOS device includes: a P-type epitaxial layer, a first and a second insulation region, a first P-type well, a second P-type well, a gate, an N-type source, and an N-type drain. The P-type epitaxial layer has a first concentration of P-type doped impurities. The first P-type well completely encompasses and is in contact with a lower surface of the N-type source. The second P-type well completely encompasses and is in contact with a lower surface of the N-type drain. Each of the first P-type well and the second P-type well has a second concentration of P-type doped impurities, and the second concentration of P-type doped impurities is higher than the first concentration of P-type doped impurities. The second concentration of P-type doped impurities is sufficient for preventing a leakage current from flowing between the N-type drain and the P-type substrate while the native NMOS device is in operation.
    Type: Application
    Filed: September 7, 2023
    Publication date: March 28, 2024
    Inventors: Ying-Shiou Lin, Wu-Te Weng, Yong-Zhong Hu
  • Publication number: 20240101485
    Abstract: A powder composition includes a first powder, a second powder, and a modified functional group. A particle size range of the first powder is between 1 micron and 100 microns. The second powder and the modified functional group are modified on the first powder. A particle size range of the second powder is between 10 nanometers and 1 micron. A manufacturing method of a powder composition is also provided.
    Type: Application
    Filed: November 15, 2022
    Publication date: March 28, 2024
    Applicant: NAN YA PLASTICS CORPORATION
    Inventors: Te-Chao Liao, Hung-Yi Chang, Chia-Lin Liu
  • Patent number: 11942367
    Abstract: A semiconductor device such as a fin field effect transistor and its method of manufacture are provided. In some embodiments gate spacers are formed over a semiconductor fin, and a first gate stack is formed over the fin. A first sacrificial material with a large selectivity to the gate spacers is formed over the gate stack, and a second sacrificial material with a large selectivity is formed over a source/drain contact plug. Etching processes are utilized to form openings through the first sacrificial material and through the second sacrificial material, and the openings are filled with a conductive material.
    Type: Grant
    Filed: December 7, 2020
    Date of Patent: March 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chan Syun David Yang, Li-Te Lin, Chun-Jui Huang
  • Patent number: 11937932
    Abstract: An acute kidney injury predicting system and a method thereof are proposed. A processor reads the data to be tested, the detection data, the machine learning algorithm and the risk probability comparison table from a main memory. The processor trains the detection data according to the machine learning algorithm to generate an acute kidney injury prediction model, and inputs the data to be tested into the acute kidney injury prediction model to generate an acute kidney injury characteristic risk probability and a data sequence table. The data sequence table lists the data to be tested in sequence according to a proportion of each of the data to be tested in the acute kidney injury characteristics. The processor selects one of the medical treatment data from the risk probability comparison table according to the acute kidney injury characteristic risk probability.
    Type: Grant
    Filed: July 8, 2022
    Date of Patent: March 26, 2024
    Assignees: TAICHUNG VETERANS GENERAL HOSPITAL, TUNGHAI UNIVERSITY
    Inventors: Chieh-Liang Wu, Chun-Te Huang, Cheng-Hsu Chen, Tsai-Jung Wang, Kai-Chih Pai, Chun-Ming Lai, Min-Shian Wang, Ruey-Kai Sheu, Lun-Chi Chen, Yan-Nan Lin, Chien-Lun Liao, Ta-Chun Hung, Chien-Chung Huang, Chia-Tien Hsu, Shang-Feng Tsai
  • Patent number: 11942372
    Abstract: In some embodiments, the present disclosure relates to a method for manufacturing an integrated chip. The method includes forming a transistor structure over a substrate. The transistor structure comprises a pair of source/drain regions and a gate electrode between the source/drain regions. A lower inter-level dielectric (ILD) layer is formed over the pair of source/drain regions and around the gate electrode. A gate capping layer is formed over the gate electrode. A selective etch and deposition process is performed to form a dielectric protection layer on the gate capping layer while forming a contact opening within the lower ILD layer. A lower source/drain contact is formed within the contact opening.
    Type: Grant
    Filed: August 27, 2021
    Date of Patent: March 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuan-Da Huang, Hao-Heng Liu, Li-Te Lin
  • Publication number: 20240097011
    Abstract: A method includes forming a fin structure over a substrate, wherein the fin structure comprises first semiconductor layers and second semiconductor layers alternately stacked over a substrate; forming a dummy gate structure over the fin structure; removing a portion of the fin structure uncovered by the dummy gate structure; performing a selective etching process to laterally recess the first semiconductor layers, including injecting a hydrogen-containing gas from a first gas source of a processing tool to the first semiconductor layers and the second semiconductor layers; and injecting an F2 gas from a second gas source of the processing tool to the first semiconductor layers and the second semiconductor layers; forming inner spacers on opposite end surfaces of the laterally recessed first semiconductor layers of the fin structure; and replacing the dummy gate structure and the first semiconductor layers with a metal gate structure.
    Type: Application
    Filed: December 1, 2023
    Publication date: March 21, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., TSMC NANJING COMPANY LIMITED
    Inventors: Han-Yu LIN, Fang-Wei LEE, Kai-Tak LAM, Raghunath PUTIKAM, Tzer-Min SHEN, Li-Te LIN, Pinyen LIN, Cheng-Tzu YANG, Tzu-Li LEE, Tze-Chung LIN
  • Publication number: 20240099005
    Abstract: Memory devices and methods of forming the same are provided. A memory device of the present disclosure includes a bottom dielectric layer, a gate structure extending vertically from the bottom dielectric layer, a stack structure, and a dielectric layer extending between the gate structure and the stack structure. The stack structure includes a first silicide layer, a second silicide layer, an oxide layer extending bet ween the first and second silicide layers, a channel region over the oxide layer and extending between the first and second silicide layers, and an isolation layer over the second silicide layer. The first and second silicide layers include cobalt, titanium, tungsten, or palladium.
    Type: Application
    Filed: November 30, 2023
    Publication date: March 21, 2024
    Inventors: Sheng-Chih Lai, Chung-Te Lin, Yung-Yu Chen
  • Publication number: 20240093267
    Abstract: A high-throughput automated preprocessing method and a system are applied to a nucleic acid preprocessing apparatus including a control system, a sample transfer area, a nucleic acid extraction area, and a reagent setup area. The control system includes a user interface and guides a user to set up on the user interface. In the sample transfer area, the method includes steps of: a user selecting a sampling tube type, a test protocol and an extraction protocol on the user interface, and the control system performing a sample transfer task. In the nucleic acid extraction area, the method includes steps of: the control system performing a nucleic acid extraction task based on the selected extraction protocol. In the reagent setup area, the method includes steps of: the control system performing a reagent deployment task based on the selected test protocol, and the control system performing a nucleic acid transfer task.
    Type: Application
    Filed: September 19, 2023
    Publication date: March 21, 2024
    Inventors: Wei-Te Hsieh, Chia-Yen Lin, Kuang-An Wang, Keng-Ting Liu, Shu-Hui Huang
  • Publication number: 20240096712
    Abstract: Provided is a semiconductor device includes a gate electrode, a gate dielectric layer, a channel layer, an insulating layer, a first source/drain electrode and a second source/drain electrode, a second dielectric layer, and a stop segment. The gate electrode is located within a first dielectric layer that overlies a substrate. The gate dielectric layer is located over the gate electrode. The channel layer is located on the gate dielectric layer. The insulating layer is located over the channel layer. The first source/drain electrode and the second source/drain electrode are located in the insulating layer, and connected to the channel layer. The second dielectric layer is beside one of the first source/drain electrode and the second source/drain electrode. The stop segment is embedded in the second dielectric layer.
    Type: Application
    Filed: January 10, 2023
    Publication date: March 21, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Wei Jiang, Chieh-Fang Chen, Yen-Chung Ho, Pin-Cheng Hsu, Feng-Cheng Yang, Chung-Te Lin
  • Publication number: 20240099149
    Abstract: Semiconductor structure and methods of forming the same are provided. An exemplary method includes receiving a workpiece including a magnetic tunneling junction (MTJ) and a conductive capping layer disposed on the MTJ, depositing a first dielectric layer over the workpiece, performing a first planarization process to the first dielectric layer, and after the performing of the first planarization process, patterning the first dielectric layer to form an opening exposing a top surface of the conductive capping layer, selectively removing the conductive capping layer. The method also includes depositing an electrode layer to fill the opening and performing a second planarization process to the workpiece such that a top surface of the electrode layer and a top surface of the first dielectric layer are coplanar.
    Type: Application
    Filed: November 27, 2023
    Publication date: March 21, 2024
    Inventors: Yu-Feng Yin, Min-Kun Dai, Chien-Hua Huang, Chung-Te Lin
  • Patent number: 11935349
    Abstract: Techniques for managing access to a physical area are provided. In one technique, first data is extracted from a digital file. Based on identification data within the first data, a database is searched. A data item in the database is identified that matches the identification data. The first data is associated with the data item. After associating the first data with the data item, code data is generated. Encoded data that encodes the code data is then generated. The encoded data is sent over a computer network to a mobile device, or an account, of a user that is associated with the data item.
    Type: Grant
    Filed: October 29, 2021
    Date of Patent: March 19, 2024
    Assignee: Ricoh Company, Ltd.
    Inventors: Candice Lin, Te-Yu Chu, Phuc Nguyen, Yuwen Wu, Kaoru Watanabe, Shun Tanaka, Jayasimha Nuggehalli
  • Patent number: 11937426
    Abstract: The present disclosure provides a semiconductor structure and a method for forming a semiconductor structure. The semiconductor structure includes a substrate, and a dielectric stack over the substrate. The dielectric stack includes a first layer over the substrate and a second layer over the first layer. The semiconductor structure further includes a gate layer including a first portion traversing the second layer and a second portion extending between the first layer and the second layer.
    Type: Grant
    Filed: May 3, 2021
    Date of Patent: March 19, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Feng-Ching Chu, Feng-Cheng Yang, Katherine H. Chiang, Chung-Te Lin, Chieh-Fang Chen
  • Patent number: 11935966
    Abstract: A transistor device includes a first source/drain region and a second source/drain region spaced apart from each other; a channel layer electrically connected to the first and second source/drain regions; a gate insulator layer; a gate electrode isolated from the channel layer by the gate insulator layer; and a UV-attenuating layer disposed on the channel layer to protect the channel layer from characteristic degradation caused by UV light.
    Type: Grant
    Filed: April 28, 2021
    Date of Patent: March 19, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Katherine H. Chiang, Neil Quinn Murray, Ming-Yen Chuang, Chung-Te Lin
  • Patent number: 11935894
    Abstract: An integrated circuit device includes a device layer having devices spaced in accordance with a predetermined device pitch, a first metal interconnection layer disposed above the device layer and coupled to the device layer, and a second metal interconnection layer disposed above the first metal interconnection layer and coupled to the first metal interconnection layer through a first via layer. The second metal interconnection layer has metal lines spaced in accordance with a predetermined metal line pitch, and a ratio of the predetermined metal line pitch to predetermined device pitch is less than 1.
    Type: Grant
    Filed: November 4, 2022
    Date of Patent: March 19, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Fong-yuan Chang, Chun-Chen Chen, Po-Hsiang Huang, Lee-Chung Lu, Chung-Te Lin, Jerry Chang Jui Kao, Sheng-Hsiung Chen, Chin-Chou Liu
  • Publication number: 20240086610
    Abstract: A partitioning method for partitioning a group of power-ground (PG) cells is disclosed. The method includes: placing at least one out-boundary PG cell on a substrate, wherein power strips of the at least one out-boundary PG cell are aligned with corresponding power rails on the substrate; and placing at least one in-boundary PG cell on the substrate, wherein power strips of the at least one in-boundary PG cell are aligned with corresponding power rails on the substrate.
    Type: Application
    Filed: November 17, 2023
    Publication date: March 14, 2024
    Inventors: Yen-Hung LIN, Yuan-Te HOU, Chung-Hsing WANG
  • Publication number: 20240090230
    Abstract: A memory array and an operation method of the memory array are provided. The memory array includes first and second ferroelectric memory devices formed along a gate electrode, a channel layer and a ferroelectric layer between the gate electrode and the channel layer. The ferroelectric memory devices include: a common source/drain electrode and two respective source/drain electrodes, separately in contact with a side of the channel layer opposite to the ferroelectric layer, wherein the common source/drain electrode is disposed between the respective source/drain electrodes; and first and second auxiliary gates, capacitively coupled to the channel layer, wherein the first auxiliary gate is located between the common source/drain electrode and one of the respective source/drain electrodes, and the second auxiliary gate is located between the common source/drain electrode and the other respective source/drain electrode.
    Type: Application
    Filed: January 9, 2023
    Publication date: March 14, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wen-Ling Lu, Chen-Jun Wu, Ya-Yun Cheng, Sheng-Chih Lai, Yi-Ching Liu, Yu-Ming Lin, Feng-Cheng Yang, Chung-Te Lin
  • Publication number: 20240088291
    Abstract: A transistor includes an insulating layer, a source region, a drain region, a channel layer, a ferroelectric layer, and a gate electrode. The source region and the drain region are respectively disposed on and in physical contact with two opposite sidewalls of the insulating layer. A thickness of the source region, a thickness of the drain region, and a thickness of the insulating layer are substantially the same. The channel layer is disposed on the insulating layer, the source region, and the drain region. The ferroelectric layer is disposed over the channel layer. The gate electrode is disposed on the ferroelectric layer.
    Type: Application
    Filed: November 15, 2023
    Publication date: March 14, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hung-Chang Sun, Sheng-Chih Lai, Yu-Wei Jiang, Kuo-Chang Chiang, TsuChing Yang, Feng-Cheng Yang, Chung-Te Lin
  • Publication number: 20240090226
    Abstract: A semiconductor structure includes a plurality of memory cells stacked up along a first direction. Each of the memory cells include a memory stack, connecting lines, and insulating layers. The memory stack includes a first dielectric layer, a channel layer disposed on the first dielectric layer, a charge trapping layer disposed on the channel layer, a second dielectric layer disposed on the charge trapping layer, and a gate layer disposed in between the channel layer and the second dielectric layer. The connecting lines are extending along the first direction and covering side surfaces of the memory stack. The insulating layers are extending along the first direction, wherein the insulating layers are located aside the connecting lines and covering the side surfaces of the memory stack.
    Type: Application
    Filed: November 23, 2023
    Publication date: March 14, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sheng-Chih Lai, Chung-Te Lin
  • Patent number: D1019253
    Type: Grant
    Filed: November 29, 2021
    Date of Patent: March 26, 2024
    Assignee: WANTBO.CO., LTD
    Inventor: Chih-Te Lin