Abstract: Switches are turned on and off to establish a first state in which a first capacitor is coupled between an input node and a first node, a second capacitor and a first coil are coupled between the first node and an output node, a third capacitor and a second coil are coupled between the first node and the output node, and a second node is coupled to a first reference potential node; and a second state in which the second capacitor and the first coil are coupled between a third node and the output node, the first and third capacitors and the second coil are coupled between the third node and the output node, a fourth node is coupled to a node to which the first and third capacitors are coupled, and a fifth node is coupled to a second reference potential node.

Abstract: Provided are a diamond field effect transistor using a silicon oxide film as a gate insulating film including a silicon-terminated layer containing C—Si bonds in order to reduce an interface state density, and a method for producing the same. A FET 100A includes a silicon oxide film 3A formed on a surface of a non-doped diamond layer 2A, a non-doped diamond layer 4A formed on a surface of the non-doped diamond layer 2A using the silicon oxide film 3A as a mask, a silicon-terminated layer 5A formed at an interface between the non-doped diamond layer 2A and the silicon oxide film 3A and at an interface between the non-doped diamond layer 4A and the silicon oxide film 3A, and a gate electrode 12A formed on the silicon oxide film 3A. The FET 100A operates using the silicon oxide film 3A and an insulating film 10A formed on the silicon oxide film 3A as a gate insulating film 11A and using the non-doped diamond layer 4A as each of a source region and a drain region.

Abstract: A DCDC circuit according to an embodiment includes a capacitor network, and a smoothing capacitor. The capacitor network includes a first state in which first capacitors are connected onto a wiring path between an input node to which an input voltage is applied and one end of a first coil and a second capacitor is connected between a connection point of the first capacitors on the wiring path and a reference potential point, and a second state in which the second capacitor is connected to one end of a second coil and the first capacitors are connected between one end of the second capacitor and the reference potential point and between the other end of the second capacitor and the reference potential point, respectively.

Abstract: A DCDC circuit according to an embodiment includes a capacitor network, and a smoothing capacitor. The capacitor network includes a first state in which first capacitors are connected onto a wiring path between an input node to which an input voltage is applied and one end of a first coil and a second capacitor is connected between a connection point of the first capacitors on the wiring path and a reference potential point, and a second state in which the second capacitor is connected to one end of a second coil and the first capacitors are connected between one end of the second capacitor and the reference potential point and between the other end of the second capacitor and the reference potential point, respectively.

Abstract: Provided are a diamond field effect transistor using a silicon oxide film as a gate insulating film including a silicon-terminated layer containing C—Si bonds in order to reduce an interface state density, and a method for producing the same. A FET 100A includes a silicon oxide film 3A formed on a surface of a non-doped diamond layer 2A, a non-doped diamond layer 4A formed on a surface of the non-doped diamond layer 2A using the silicon oxide film 3A as a mask, a silicon-terminated layer 5A formed at an interface between the non-doped diamond layer 2A and the silicon oxide film 3A and at an interface between the non-doped diamond layer 4A and the silicon oxide film 3A, and a gate electrode 12A formed on the silicon oxide film 3A. The FET 100A operates using the silicon oxide film 3A and an insulating film 10A formed on the silicon oxide film 3A as a gate insulating film 11A and using the non-doped diamond layer 4A as each of a source region and a drain region.

Abstract: The disclosure discloses a method and device for display a picture, relates to the field of electronic information and is intended to address the problems of a long modeling period of time and inefficient modeling when the picture is three-dimensionally displayed. Particularly the method includes: obtaining at least one picture sequence number, wherein a picture sequence number corresponds to a picture; substituting the at least one picture sequence number into a preset set of equations to calculate location information of at least one picture, wherein the preset set of equations is a set of equations created in a virtual three-dimensional coordinate system, and location information of a picture corresponds to a picture sequence number; and displaying the at least one picture according to the location information of the at least one picture. The disclosure is applicable to display of a picture.

Abstract: The disclosure discloses a method and device for display a picture, relates to the field of electronic information and is intended to address the problems of a long modeling period of time and inefficient modeling when the picture is three-dimensionally displayed. Particularly the method includes: obtaining at least one picture sequence number, wherein a picture sequence number corresponds to a picture; substituting the at least one picture sequence number into a preset set of equations to calculate location information of at least one picture, wherein the preset set of equations is a set of equations created in a virtual three-dimensional coordinate system, and location information of a picture corresponds to a picture sequence number; and displaying the at least one picture according to the location information of the at least one picture. The disclosure is applicable to display of a picture.