Patents by Inventor Te-Change Tsui

Te-Change Tsui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10546640
    Abstract: A data protecting method and a memory storage device are provided. The data protecting method includes reading a first string from the rewritable non-volatile memory module to obtain a data string; performing a decoding operation based on the data string to obtain block information corresponding to a plurality of physical erasing units; inputting the block information to an error checking and correcting (ECC) circuit of the memory storage device to generate a second string; and storing the second string into the rewritable non-volatile memory module.
    Type: Grant
    Filed: May 10, 2017
    Date of Patent: January 28, 2020
    Assignee: PHISON ELECTRONICS CORP.
    Inventors: Tsung-Lin Wu, Te-Chang Tsui, Chien-Fu Lee
  • Publication number: 20180276067
    Abstract: A data protecting method and a memory storage device are provided. The data protecting method includes reading a first string from the rewritable non-volatile memory module to obtain a data string; performing a decoding operation based on the data string to obtain block information corresponding to a plurality of physical erasing units; inputting the block information to an error checking and correcting (ECC) circuit of the memory storage device to generate a second string; and storing the second string into the rewritable non-volatile memory module.
    Type: Application
    Filed: May 10, 2017
    Publication date: September 27, 2018
    Applicant: PHISON ELECTRONICS CORP.
    Inventors: Tsung-Lin Wu, Te-Chang Tsui, Chien-Fu Lee
  • Patent number: 9146861
    Abstract: A memory address management method, a memory controller, and a memory storage device are provided. The memory address management method includes: obtaining memory information of a rewritable non-volatile memory module and formatting logical addresses according to the memory information to establish a file system, such that an allocation unit of the file system includes a lower logical programming unit and an upper logical programming unit. Here, the memory information includes a programming sequence, the allocation unit starts with the lower logical programming unit and ends with the upper logical programming unit, and an initial logical address of a data region in the file system belongs to the lower logical programming unit. Accordingly, an access bandwidth of the memory storage device is expanded.
    Type: Grant
    Filed: October 16, 2013
    Date of Patent: September 29, 2015
    Assignee: PHISON ELECTRONICS CORP.
    Inventors: Hong-Lipp Ko, Teng-Chun Hsu, Po-Ting Chen, Te-Chang Tsui
  • Patent number: 8966161
    Abstract: A memory storage device and a repairing method thereof are provided. The memory storage device has a rewritable non-volatile memory module having multiple physical units. The physical units include at least one backup physical unit which is configured to be accessed only by a specific command set and stored with at least one customized data. The method includes receiving a specific read command from a host system for reading the backup physical unit and transmitting the customized data therein to the host system when the memory storage device is capable of receiving and processing commands from the host system, the specific read command belongs to the specific command set; and writing the customized data from the host system into a corresponding physical unit to restore the memory storage device to a factory setting when receiving the writing command from the host system for writing the customized data.
    Type: Grant
    Filed: October 1, 2012
    Date of Patent: February 24, 2015
    Assignee: Phison Electronics Corp.
    Inventors: Te-Change Tsui, Tzung-Lin Wu
  • Publication number: 20150046632
    Abstract: A memory address management method, a memory controller, and a memory storage device are provided. The memory address management method includes: obtaining memory information of a rewritable non-volatile memory module and formatting logical addresses according to the memory information to establish a file system, such that an allocation unit of the file system includes a lower logical programming unit and an upper logical programming unit. Here, the memory information includes a programming sequence, the allocation unit starts with the lower logical programming unit and ends with the upper logical programming unit, and an initial logical address of a data region in the file system belongs to the lower logical programming unit. Accordingly, an access bandwidth of the memory storage device is expanded.
    Type: Application
    Filed: October 16, 2013
    Publication date: February 12, 2015
    Applicant: Phison Electronics Corp.
    Inventors: Hong-Lipp Ko, Teng-Chun Hsu, Po-Ting Chen, Te-Chang Tsui
  • Publication number: 20140013029
    Abstract: A memory storage device and a repairing method thereof are provided. The memory storage device has a rewritable non-volatile memory module having multiple physical units. The physical units include at least one backup physical unit which is configured to be accessed only by a specific command set and stored with at least one customized data. The method includes receiving a specific read command from a host system for reading the backup physical unit and transmitting the customized data therein to the host system when the memory storage device is capable of receiving and processing commands from the host system, the specific read command belongs to the specific command set; and writing the customized data from the host system into a corresponding physical unit to restore the memory storage device to a factory setting when receiving the writing command from the host system for writing the customized data.
    Type: Application
    Filed: October 1, 2012
    Publication date: January 9, 2014
    Applicant: PHISON ELECTRONICS CORP.
    Inventors: Te-Change Tsui, Tzung-Lin Wu