Abstract: A system and a method for parameter optimization with adaptive search space and a user interface using the same are provided. The system includes a data acquisition unit, an adaptive adjustment unit and an optimization search unit. The data acquisition unit obtains a set of executed values of several operating parameters and a target parameter. The adaptive adjustment unit includes a parameter space transformer and a search range definer. The parameter space transformer performs a space transformation on a parameter space of the operating parameters according to the executed values. The search range definer defines a parameter search range in a transformed parameter space based on the sets of the executed values. The optimization search unit takes the parameter search range as a limiting condition and takes optimizing the target parameter as a target to search for a set of recommended values of the operating parameters.

Abstract: A method includes: forming overlay structures at scribe lines of a wafer, each side of a die region of the wafer is disposed with at least one of the overlay structures, each of the overlay structures comprises at least one feature and at least one recess disposed above the feature, the feature and the recess are respectively disposed at a first and second layers of the wafer, the recess exposes a portion of the feature vertically aligned with the recess; acquiring an image of the overlay structures; measuring a first dimension and a second dimension of a first portion and a second portion of the recess, respectively; determining an overlay between the first and second layers of an edge region of the wafer based on an average of differences between the first and second dimensions; and modifying a subsequent lithography step to compensate for the overlay.

Abstract: A method includes: forming overlay structures at scribe lines of a wafer, each side of a die region of the wafer is disposed with at least one of the overlay structures, each of the overlay structures comprises at least one feature and at least one recess disposed above the feature, the feature and the recess are respectively disposed at a first and second layers of the wafer, the recess exposes a portion of the feature vertically aligned with the recess; acquiring an image of the overlay structures; measuring a first dimension and a second dimension of a first portion and a second portion of the recess, respectively; determining an overlay between the first and second layers of an edge region of the wafer based on an average of differences between the first and second dimensions; and modifying a subsequent lithography step to compensate for the overlay.