Patents by Inventor Te-Chih Ting

Te-Chih Ting has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240170339
    Abstract: In a method of manufacturing a semiconductor device, an n-type source/drain epitaxial layer and a p-type source/drain epitaxial layer respectively formed, a dielectric layer is formed over the n-type source/drain epitaxial layer and the p-type source/drain epitaxial layer, a first opening is formed in the dielectric layer to expose a part of the n-type source/drain epitaxial layer and a second opening is formed in the dielectric layer to expose a part of the p-type source/drain epitaxial layer, and the n-type source/drain epitaxial layer and the p-type source/drain epitaxial layer respectively recessed. A recessing amount of the n-type source/drain epitaxial layer is different from a recessing amount of the p-type source/drain epitaxial layer.
    Type: Application
    Filed: March 2, 2023
    Publication date: May 23, 2024
    Inventors: Te-Chih Hsiung, Yun-Hua Chen, Yang-Cheng Wu, Sheng-Hsun Fu, Wen-Kuo Hsieh, Chih-Yuan Ting, Huan-Just Lin, Bing-Sian Wu, Yi-Hsuan Chiu
  • Publication number: 20240120203
    Abstract: A method includes forming a dummy gate over a semiconductor fin; forming a source/drain epitaxial structure over the semiconductor fin and adjacent to the dummy gate; depositing an interlayer dielectric (ILD) layer to cover the source/drain epitaxial structure; replacing the dummy gate with a gate structure; forming a dielectric structure to cut the gate structure, wherein a portion of the dielectric structure is embedded in the ILD layer; recessing the portion of the dielectric structure embedded in the ILD layer; after recessing the portion of the dielectric structure, removing a portion of the ILD layer over the source/drain epitaxial structure; and forming a source/drain contact in the ILD layer and in contact with the portion of the dielectric structure.
    Type: Application
    Filed: March 8, 2023
    Publication date: April 11, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Te-Chih HSIUNG, Yun-Hua CHEN, Bing-Sian WU, Yi-Hsuan CHIU, Yu-Wei CHANG, Wen-Kuo HSIEH, Chih-Yuan TING, Huan-Just LIN
  • Publication number: 20040175459
    Abstract: A method for producing an aqueous beverage containing sporogenous lactic bacteria in accordance with the present invention uses dormant sporogenous lactic bacterium in a water solution. The dormant state is achieved by making the sporogenous lactic bacteria produce endospores so the sporogenous lactic bacteria will have excellent endurance in a water solution at room temperature and even extreme conditions in the digestive system. The dormant sporogenous lactic bacteria specifically revive in the intestines. Therefore, the aqueous beverage containing sporogenous lactic bacterium can be stored without being refrigerated and has a long preserving life. Moreover, the lactic bacterium actually develops its beneficial features in the intestines.
    Type: Application
    Filed: March 6, 2003
    Publication date: September 9, 2004
    Inventor: Te-Chih Ting