Patents by Inventor Te Ching Chang

Te Ching Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Film deposition method and apparatus
    Patent number: 8734901
    Abstract: A film deposition method of depositing a thin film by alternately supplying at least a first source gas and a second source gas to a substrate is disclosed. The film deposition method includes steps of evacuating a process chamber where the substrate is accommodated, without supplying any gas to the process chamber; supplying an inert gas to the process chamber until a pressure within the process chamber becomes a predetermined pressure; supplying the first source gas to the process chamber filled with the inert gas at the predetermined pressure without evacuating the process chamber; stopping supplying the first source gas to the process chamber and evacuating the process chamber; supplying the second source gas to the process chamber; and stopping supplying the second source gas to the process chamber and evacuating the process chamber.
    Type: Grant
    Filed: February 22, 2012
    Date of Patent: May 27, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Keisuke Suzuki, Pao-Hwa Chou, Te ching Chang
  • FILM DEPOSITION METHOD AND APPARATUS
    Publication number: 20120269969
    Abstract: A film deposition method of depositing a thin film by alternately supplying at least a first source gas and a second source gas to a substrate is disclosed. The film deposition method includes steps of evacuating a process chamber where the substrate is accommodated, without supplying any gas to the process chamber; supplying an inert gas to the process chamber until a pressure within the process chamber becomes a predetermined pressure; supplying the first source gas to the process chamber filled with the inert gas at the predetermined pressure without evacuating the process chamber; stopping supplying the first source gas to the process chamber and evacuating the process chamber; supplying the second source gas to the process chamber; and stopping supplying the second source gas to the process chamber and evacuating the process chamber.
    Type: Application
    Filed: February 22, 2012
    Publication date: October 25, 2012
    Applicant: Tokyo Electron Limited
    Inventors: Keisuke SUZUKI, Pao-Hwa Chou, Te Ching Chang