Patents by Inventor Te-Hsin CHIANG

Te-Hsin CHIANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10604700
    Abstract: A method for manufacturing a nitride phosphor is provided. The method comprises providing a nitride phosphor formulation and subjecting the nitride phosphor formulation to a hot isostatic pressing step. The nitride phosphor formulation comprises a flux and a phosphor precursor, wherein the flux is a barium-containing nitride. The phosphor precursor comprises two or more metal nitrides, and wherein a plurality of metal elements are present in the nitride phosphor and the two or more metal nitrides contain the plurality of metal elements.
    Type: Grant
    Filed: November 1, 2017
    Date of Patent: March 31, 2020
    Assignee: BELL CERAMICS CO., LTD.
    Inventors: Chang-Lung Chiang, Mu-Huai Fang, Chia-Shen Hsu, Ru-Shi Liu, Chaochin Su, Te-Hsin Chiang
  • Publication number: 20190300788
    Abstract: A red nitride phosphor is provided. The red nitride phosphor is represented by the following general formula (I): SrLi(GaxAl1-x)3N4:Eu2+??general formula (I), in general formula (I), 0<x?1.
    Type: Application
    Filed: July 2, 2018
    Publication date: October 3, 2019
    Inventors: Shu-Yi MENG, Mu-Huai FANG, Ru-Shi LIU, Chang-Lung CHIANG, Chang-Yang CHIANG, Te-Hsin CHIANG
  • Publication number: 20180362844
    Abstract: A method for manufacturing a nitride phosphor is provided. The method comprises providing a nitride phosphor formulation and subjecting the nitride phosphor formulation to a hot isostatic pressing step. The nitride phosphor formulation comprises a flux and a phosphor precursor, wherein the flux is a barium-containing nitride. The phosphor precursor comprises two or more metal nitrides, and wherein a plurality of metal elements are present in the nitride phosphor and the two or more metal nitrides contain the plurality of metal elements.
    Type: Application
    Filed: November 1, 2017
    Publication date: December 20, 2018
    Inventors: Chang-Lung Chiang, Mu-Huai Fang, Chia-Shen Hsu, Ru-Shi Liu, Chaochin Su, Te-Hsin Chiang
  • Patent number: 8836207
    Abstract: A fluorescent layer, its preparation method and uses are provided. The fluorescent layer is provided from a fluorescent material and a calcining material. The fluorescent material is in an amount ranging from about 5 wt % to about 95 wt % based on the total weight of the fluorescent layer. The fluorescent layer of the present invention can be used in a light-emitting diode to change the color of emitting-light and improve the heat dissipation of the light-emitting diode. Furthermore, the fluorescent layer of the present invention is free of an organic resin, and thus, does not have the problem of aging (etiolation). The final product has a stable, lasting and durable luminescent quality.
    Type: Grant
    Filed: June 14, 2012
    Date of Patent: September 16, 2014
    Assignee: Bell Ceramics Co., Ltd.
    Inventors: Te-Hsin Chiang, Ru-Shi Liu, Der-Shing Chiang, Chang-Yang Chiang
  • Publication number: 20130015759
    Abstract: A fluorescent layer, its preparation method and uses are provided. The fluorescent layer is provided from a fluorescent material and a calcining material. The fluorescent material is in an amount ranging from about 5 wt % to about 95 wt % based on the total weight of the fluorescent layer. The fluorescent layer of the present invention can be used in a light-emitting diode to change the color of emitting-light and improve the heat dissipation of the light-emitting diode. Furthermore, the fluorescent layer of the present invention is free of an organic resin, and thus, does not have the problem of aging (etiolation). The final product has a stable, lasting and durable luminescent quality.
    Type: Application
    Filed: June 14, 2012
    Publication date: January 17, 2013
    Inventors: Te-Hsin CHIANG, Ru-Shi LIU, Der-Shing CHIANG, Chang-Yang CHIANG