Abstract: A display may have organic light-emitting diode pixels formed from thin-film circuitry. An organic layer including planarization layers and a pixel definition layer may overlap the thin-film circuitry. Thin-film encapsulation may overlap the organic layer. The thin-film encapsulation may be formed from an organic dielectric layer interposed between two layers of inorganic dielectric material. A strip of peripheral crack-stopper structures may run along an edge of the display and may surround the array of pixels. The crack-stopper structures may include parallel inorganic lines formed from a first inorganic layer such as an inorganic layer of the thin-film circuitry. A strip of the organic layer may overlap the parallel inorganic lines. The crack-stopper structures may have parallel tapered polymer lines. The polymer lines may be overlapped by a second inorganic dielectric layer formed from the inorganic material of the thin-film encapsulation layer.

Abstract: Hybrid silicon TFT and oxide TFT structures and methods of formation are described. In an embodiment, a protection layer is formed over a semiconductor oxide channel layer of the oxide TFT to protect the semiconductor oxide channel layer during a cleaning operation of the silicon TFT.

Abstract: An AMOLED display device includes a substrate, a device layer, a flat layer, a first, a second, and a third color filter layers, a first, a second, and a third pixel electrodes, a first, a second and a third organic light emitting layers. The device layer on the substrate includes active devices. The flat layer on the device layer includes contact window openings. The first color filter layer on the flat layer has a first pixel area and a first opening configured above a part of the contact window openings. The second color filter layer on the flat layer has a second pixel area and a second opening configured above a part of the contact window openings. The third color filter layer on the flat layer has a third pixel area and a third opening configured above a part of the contact window openings.

Abstract: An AMOLED display device includes a substrate, a device layer, a flat layer, a first, a second, and a third color filter layers, a first, a second, and a third pixel electrodes, a first, a second and a third organic light emitting layers. The device layer on the substrate includes active devices. The flat layer on the device layer includes contact window openings. The first color filter layer on the flat layer has a first pixel area and a first opening configured above a part of the contact window openings. The second color filter layer on the flat layer has a second pixel area and a second opening configured above a part of the contact window openings. The third color filter layer on the flat layer has a third pixel area and a third opening configured above a part of the contact window openings.

Abstract: A method for fabricating an AMOLED display device is provided. A substrate is provided. A device layer having multiple active devices is formed on the substrate. A flat layer is configured on the device layer. A first, a second and a third color photoresistant layers are respectively configured on the flat layer and are patterned to form a first, a second and a third color filter layers. The first, the second and the third color filter layers respectively define a first, a second and a third pixel areas and are used for etching masks to etch the flat layer for exposing parts of the active devices. A first, a second and a third pixel electrode are respectively configured in the mentioned pixel areas and are electrically connected with the active devices. A first, a second and a third organic light emitting layers are respectively configured on the mentioned pixel electrodes.

Abstract: A method of fabricating a poly silicon layer comprising the following steps is provided. First, a substrate is provided and an amorphous silicon layer is formed on the substrate. A patterned metal layer is formed on the amorphous silicon layer. Next, a pulsed rapid thermal annealing process is performed to form a metal silicide between the patterned metal layer and the amorphous silicon layer, wherein the patterned metal layer and the amorphous silicon layer are adopted for conducting thermal energy to the amorphous silicon layer such that the amorphous silicon layer is converted into a polysilicon layer. Finally, the patterned metal layer is removed. A polysilicon layer formed according to the above-mentioned fabrication method is also provided. The grains of the poly silicon layer are spherical in shape.

Abstract: A method of fabricating a poly silicon layer comprising the following steps is provided. First, a substrate is provided and an amorphous silicon layer is formed on the substrate. A patterned metal layer is formed on the amorphous silicon layer. Next, a pulsed rapid thermal annealing process is performed to form a metal silicide between the patterned metal layer and the amorphous silicon layer, wherein the patterned metal layer and the amorphous silicon layer are adopted for conducting thermal energy to the amorphous silicon layer such that the amorphous silicon layer is converted into a polysilicon layer. Finally, the patterned metal layer is removed. Accordingly, the above processes may prevent the poly silicon layer from metal contamination.

Abstract: A method of fabricating a poly silicon layer comprising the following steps is provided. First, a substrate is provided and an amorphous silicon layer is formed on the substrate. A patterned metal layer is formed on the amorphous silicon layer. Next, a pulsed rapid thermal annealing process is performed to form a metal silicide between the patterned metal layer and the amorphous silicon layer, wherein the patterned metal layer and the amorphous silicon layer are adopted for conducting thermal energy to the amorphous silicon layer such that the amorphous silicon layer is converted into a polysilicon layer. Finally, the patterned metal layer is removed. Accordingly, the above processes may prevent the poly silicon layer from metal contamination.

Abstract: A method for fabricating an AMOLED display device is provided. A substrate is provided. A device layer having multiple active devices is formed on the substrate. A flat layer is configured on the device layer. A first, a second and a third color photoresistant layers are respectively configured on the flat layer and are patterned to form a first, a second and a third color filter layers. The first, the second and the third color filter layers respectively define a first, a second and a third pixel areas and are used for etching masks to etch the flat layer for exposing parts of the active devices. A first, a second and a third pixel electrode are respectively configured in the mentioned pixel areas and are electrically connected with the active devices. A first, a second and a third organic light emitting layers are respectively configured on the mentioned pixel electrodes.

Abstract: A method of fabricating a polysilicon layer is provided. A substrate having a front surface and a back surface is provided. A buffer layer, an amorphous layer and a cap layer are sequentially formed on the front surface of the substrate. The cap layer is patterned to form a patterned cap layer exposing a portion of the amorphous layer, wherein the exposed portion of the amorphous layer is a crystallization initial region. A metallic catalytic layer is formed on the patterned cap layer, wherein the metallic catalytic layer contacts with the crystallization initial region of the amorphous layer. A laser annealing process is performed through the back surface of the substrate so that the amorphous layer is crystallized and transformed into a polysilicon layer from the crystallization initial region.

Abstract: A thin film transistor having a substrate, a gate insulating layer, a double-gate structure, a first lightly doped region, and a second lightly doped region. The substrate has a source region and a drain region disposed on its opposite sides, a heavily doped region between source region and drain region, a first channel region between heavily doped region and source region and a second channel region between heavily doped region and drain region. The gate insulating layer covers the substrate. The double-gate structure has a first gate and a second gate disposed on gate insulating layer above the first and the second channel region, respectively. The first lightly doped region is disposed between second channel region and heavily doped region and the second lightly doped region between second channel region and drain region. The length of second lightly doped region is greater than that of first lightly doped region.

Abstract: A method of fabricating a thin film transistor is provided. An amorphous silicon layer is formed on a substrate. Then, the amorphous silicon layer is transformed into a polysilicon layer. After that, a heat process is performed for repairing the lattice defects of the polysilicon layer. Then, an ion implantation process is performed on the polysilicon layer. A gate isolation layer is formed on the substrate to cover the polysilicon layer. Then, a gate electrode disposed above the polysilicon layer is formed on the gate isolation layer. After, a source and a drain are formed in the polysilicon layer, wherein a channel is formed between the source and the drain. A patterned dielectric layer exposing a portion of the source and the drain is formed on the substrate. A source electrode and a drain electrode electrically connected to the source and the drain respectively are formed on the patterned dielectric layer.