Abstract: A real-time gas leakage monitoring system applicable for a vacuum device includes an exhaust device connected to an exhaust end of the vacuum device. In addition to the use of the exhaust device for exhausting a gas from the vacuum device, a mass flow controller can also be connected to the exhaust end to receive the gas exhausted from the vacuum cavity and control a mass flow as a basis to determine a gas leakage setting value, and then a gas leakage detector is used to detect water and oxygen in the gas exhausted from the vacuum cavity. When water and oxygen are detected in the exhaust gas, it indicates a gas leakage status, and a warning signal can be outputted immediately to achieve the real-time gas leakage monitoring effect.

Abstract: A light emitting element includes a substrate, a lower cladding layer, a lower confinement layer, an active layer, an upper confinement layer, an upper cladding layer, a tunnel junction layer, a window layer and an upper electrode sequentially arranged from bottom to top. The tunnel junction layer is for converting the window layer and upper electrode from the p-type of a traditional LED to the n-type of the light emitting element of this disclosure. Since the n-type window layer has a resistance much smaller than that of the p-type window layer, the window layer of this disclosure has low resistance and good current spreading effect to improve the light emitting efficiency. Since the n-type upper electrode has a resistance much lower than that of the p-type upper electrode, the n-type upper electrode of this disclosure is more conducive to ohmic contact than the p-type upper electrode of the traditional LED.

Abstract: A vertical cavity surface emitting laser (VCSEL) device includes a substrate, a first mirror layer, a tunnel junction layer, a second mirror layer, an active layer, an oxide layer and a third mirror layer sequentially stacked with one another. The first mirror layer and the third mirror layer are N-type distributed Bragg reflectors (N-DBR), and the second mirror layer is P-type distributed Bragg reflector (P-DBR). The tunnel junction layer is provided for the VCSEL device to convert a part of the P-DBR into N-DBR to reduce the series resistance of the VCSEL device, and the tunnel junction layer is not used as current-limiting apertures. This disclosure further discloses a VCSEL device manufacturing method with the in-situ and one-time epitaxy features to avoid the risk of process variation caused by moving the device into and out from an epitaxial cavity.

Abstract: A vertical cavity surface emitting laser (VCSEL) device includes a substrate, a first mirror layer, an active layer, an oxide layer, a second mirror layer, a tunnel junction layer and a third mirror layer sequentially stacked with one another. The first mirror layer and the third mirror layer are N-type distributed Bragg reflectors (N-DBR), and the second mirror layer is P-type distributed Bragg reflector (P-DBR). The tunnel junction layer is provided for the VCSEL device to convert a part of the P-DBR into N-DBR to reduce the series resistance of the VCSEL device, and the tunnel junction layer is not used as current-limiting apertures. This disclosure further discloses a VCSEL device manufacturing method with the in-situ and one-time epitaxy features to avoid the risk of process variation caused by moving the device into and out from an epitaxial cavity.