Patents by Inventor Te Sheng Wang
Te Sheng Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240120304Abstract: The disclosure provides an electronic device and a manufacturing method thereof. The electronic device includes a package structure, a circuit structure, a bonding structure and an external element. The circuit structure is disposed on the package structure and is electrically connected to the package structure. The circuit structure has a recess. The bonding structure includes a first bonding pad and a second bonding pad. The second bonding pad is disposed in the recess, and the second bonding pad is disposed on the first bonding pad. The bonding structure is disposed between the circuit structure and the external element. The external element is electrically connected to the circuit structure through the bonding structure. A width of the first bonding pad is smaller than a width of the second bonding pad.Type: ApplicationFiled: November 24, 2022Publication date: April 11, 2024Applicant: Innolux CorporationInventors: Tzu-Sheng Wu, Haw-Kuen Liu, Chung-Jyh Lin, Cheng-Chi Wang, Wen-Hsiang Liao, Te-Hsun Lin
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Publication number: 20230401727Abstract: A method for aligning a measured image of a pattern printed on a substrate with a design layout. The method includes: obtaining a design layout of a pattern to be printed on a substrate and a measured image of the pattern printed on the substrate; performing a simulation process to generate a plurality of simulated contours of the design layout for a plurality of process conditions of a patterning process; identifying a set of disfavored locations based on the simulated contours; and performing an image alignment process to align the measured image with a selected contour of the simulated contours using locations other than the set of disfavored locations.Type: ApplicationFiled: October 19, 2021Publication date: December 14, 2023Applicant: ASML NETHERLANDS B.V.Inventor: Te-Sheng WANG
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Patent number: 11669018Abstract: A method including: simulating an image or characteristics thereof, using characteristics of a design layout and of a patterning process, determining deviations between the image or characteristics thereof and the design layout or characteristics thereof; aligning a metrology image obtained from a patterned substrate and the design layout based on the deviations, wherein the patterned substrate includes a pattern produced from the design layout using the patterning process; and determining a parameter of a patterned substrate from the metrology image aligned with the design layout.Type: GrantFiled: June 4, 2021Date of Patent: June 6, 2023Assignee: ASML NETHERLANDS B.V.Inventor: Te-Sheng Wang
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Publication number: 20230133487Abstract: A process of characterizing a process window of a patterning process, the process including: obtaining a set of inspection locations for a pattern, the pattern defining features to be applied to a substrate with a patterning process, the set of inspection locations corresponding to a set of the features, the set of features being selected from among the features according to sensitivity of the respective features to variation in one or more process characteristics of the patterning process; patterning one or more substrates under varying process characteristics of the patterning process; and determining, for each of the variations in the process characteristics, whether at least some of the set of features yielded unacceptable patterned structures on the one or more substrates at corresponding inspection locations.Type: ApplicationFiled: December 29, 2022Publication date: May 4, 2023Applicant: ASML NETHERLANDS B.V.Inventors: Te-Sheng WANG, Xiang Wan
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Patent number: 11592752Abstract: A process of characterizing a process window of a patterning process, the process including: obtaining a set of inspection locations for a pattern, the pattern defining features to be applied to a substrate with a patterning process, the set of inspection locations corresponding to a set of the features, the set of features being selected from among the features according to sensitivity of the respective features to variation in one or more process characteristics of the patterning process; patterning one or more substrates under varying process characteristics of the patterning process; and determining, for each of the variations in the process characteristics, whether at least some of the set of features yielded unacceptable patterned structures on the one or more substrates at corresponding inspection locations.Type: GrantFiled: May 15, 2020Date of Patent: February 28, 2023Assignee: ASML Netherlands B.V.Inventors: Te-Sheng Wang, Xiang Wan
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Patent number: 11243473Abstract: A method involving obtaining a simulation of a contour of a pattern to be formed on a substrate using a patterning process, determining a location of an evaluation point on the simulated contour of the pattern, the location spatially associated with a location of a corresponding evaluation point on a design layout for the pattern, and producing electronic information corresponding to a spatial bearing between the location of the evaluation point on the simulated contour and the location of the corresponding evaluation point on the design layout, wherein the information corresponding to the spatial bearing is configured for determining a location of an evaluation point on a measured image of at least part of the pattern, the evaluation point on the measured image spatially associated with the corresponding evaluation point on the design layout.Type: GrantFiled: May 28, 2018Date of Patent: February 8, 2022Assignee: ASML Netherlands B.V.Inventors: Te-Sheng Wang, Qian Zhao
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Publication number: 20210407112Abstract: A method for determining an image-metric of features on a substrate, the method including: obtaining a first image of a plurality of features on a substrate; obtaining one or more further images of a corresponding plurality of features on the substrate, wherein at least one of the one or more further images is of a different layer of the substrate than the first image; generating aligned versions of the first and one or more further images by performing an alignment process on the first and one or more further images; and calculating an image-metric in dependence on a comparison of the features in the aligned version of the first image and the corresponding features in the one or more aligned versions of the one or more further images.Type: ApplicationFiled: September 23, 2019Publication date: December 30, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Wim Tjibbo TEL, Antoine Gaston Marie KIERS, Vadim Yourievich TIMOSHKOV, Hermanus Adrianus DILLEN, Yichen ZHANG, Te-Sheng WANG, Tzu-Chao CHEN
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Publication number: 20210294219Abstract: A method including: simulating an image or characteristics thereof, using characteristics of a design layout and of a patterning process, determining deviations between the image or characteristics thereof and the design layout or characteristics thereof; aligning a metrology image obtained from a patterned substrate and the design layout based on the deviations, wherein the patterned substrate includes a pattern produced from the design layout using the patterning process; and determining a parameter of a patterned substrate from the metrology image aligned with the design layout.Type: ApplicationFiled: June 4, 2021Publication date: September 23, 2021Applicant: ASML NETHERLANDS B.V.Inventor: Te-Sheng WANG
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Patent number: 11029609Abstract: A method including: simulating an image or characteristics thereof, using characteristics of a design layout and of a patterning process, determining deviations between the image or characteristics thereof and the design layout or characteristics thereof; aligning a metrology image obtained from a patterned substrate and the design layout based on the deviations, wherein the patterned substrate includes a pattern produced from the design layout using the patterning process; and determining a parameter of a patterned substrate from the metrology image aligned with the design layout.Type: GrantFiled: December 6, 2017Date of Patent: June 8, 2021Assignee: ASML Netherlands B.V.Inventor: Te-Sheng Wang
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Patent number: 10852646Abstract: A method including obtaining an image of a plurality of structures on a substrate, wherein each of the plurality of structures is formed onto the substrate by transferring a corresponding pattern of a design layout; obtaining, from the image, a displacement for each of the structures with respect to a reference point for that structure; and assigning each of the structures into one of a plurality of groups based on the displacement.Type: GrantFiled: April 20, 2017Date of Patent: December 1, 2020Assignee: ASML Netherlands B.V.Inventors: Marinus Jochemsen, Scott Anderson Middlebrooks, Stefan Hunsche, Te-Sheng Wang
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Publication number: 20200278613Abstract: A process of characterizing a process window of a patterning process, the process including: obtaining a set of inspection locations for a pattern, the pattern defining features to be applied to a substrate with a patterning process, the set of inspection locations corresponding to a set of the features, the set of features being selected from among the features according to sensitivity of the respective features to variation in one or more process characteristics of the patterning process; patterning one or more substrates under varying process characteristics of the patterning process; and determining, for each of the variations in the process characteristics, whether at least some of the set of features yielded unacceptable patterned structures on the one or more substrates at corresponding inspection locations.Type: ApplicationFiled: May 15, 2020Publication date: September 3, 2020Applicant: ASML NETHERLANDS B.V.Inventors: Te-Sheng WANG, Xiang Wan
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Publication number: 20200159124Abstract: A method involving obtaining a simulation of a contour of a pattern to be formed on a substrate using a patterning process, determining a location of an evaluation point on the simulated contour of the pattern, the location spatially associated with a location of a corresponding evaluation point on a design layout for the pattern, and producing electronic information corresponding to a spatial bearing between the location of the evaluation point on the simulated contour and the location of the corresponding evaluation point on the design layout, wherein the information corresponding to the spatial bearing is configured for determining a location of an evaluation point on a measured image of at least part of the pattern, the evaluation point on the measured image spatially associated with the corresponding evaluation point on the design layout.Type: ApplicationFiled: May 28, 2018Publication date: May 21, 2020Inventors: Te-Sheng WANG, Qian ZHAO
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Patent number: 10656531Abstract: A process of characterizing a process window of a patterning process, the process including: obtaining a set of inspection locations for a pattern, the pattern defining features to be applied to a substrate with a patterning process, the set of inspection locations corresponding to a set of the features, the set of features being selected from among the features according to sensitivity of the respective features to variation in one or more process characteristics of the patterning process; patterning one or more substrates under varying process characteristics of the patterning process; and determining, for each of the variations in the process characteristics, whether at least some of the set of features yield unacceptable patterned structures on the one or more substrates at corresponding inspection locations.Type: GrantFiled: December 8, 2016Date of Patent: May 19, 2020Assignee: ASML Netherlands B.V.Inventors: Te-Sheng Wang, Xiang Wan
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Publication number: 20200089122Abstract: A method including: simulating an image or characteristics thereof, using characteristics of a design layout and of a patterning process, determining deviations between the image or characteristics thereof and the design layout or characteristics thereof; aligning a metrology image obtained from a patterned substrate and the design layout based on the deviations, wherein the patterned substrate includes a pattern produced from the design layout using the patterning process; and determining a parameter of a patterned substrate from the metrology image aligned with the design layout.Type: ApplicationFiled: December 6, 2017Publication date: March 19, 2020Applicant: ASML NETHERLANDS B.V.Inventor: Te-Sheng WANG
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Publication number: 20190258169Abstract: A process of characterizing a process window of a patterning process, the process including: obtaining a set of inspection locations for a pattern, the pattern defining features to be applied to a substrate with a patterning process, the set of inspection locations corresponding to a set of the features, the set of features being selected from among the features according to sensitivity of the respective features to variation in one or more process characteristics of the patterning process; patterning one or more substrates under varying process characteristics of the patterning process; and determining, for each of the variations in the process characteristics, whether at least some of the set of features yield unacceptable patterned structures on the one or more substrates at corresponding inspection locations.Type: ApplicationFiled: December 8, 2016Publication date: August 22, 2019Applicant: ASML NETHERLANDS B.V.Inventor: Te-Sheng WANG
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Patent number: 10372043Abstract: A method for improving a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic apparatus, the method including: obtaining a relationship of a characteristic of one or more features in the portion with respect to dose; obtaining a value of the characteristic; and obtaining a target dose based on the value of the characteristic and the relationship.Type: GrantFiled: December 11, 2015Date of Patent: August 6, 2019Assignee: ASML Netherlands B.V.Inventors: Gang Chen, Te-Sheng Wang
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Patent number: 10359705Abstract: A method including measuring a value of a directly measureable processing parameter of a patterning process from a portion of a substrate produced by the patterning process; obtaining a relationship between the directly measureable processing parameter and a not directly measureable processing parameter; and determining a value of the not directly measureable processing parameter from the value of the directly measureable processing parameter and the relationship.Type: GrantFiled: September 21, 2016Date of Patent: July 23, 2019Assignee: ASML Netherlands B.V.Inventor: Te-Sheng Wang
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Publication number: 20190146358Abstract: A method including obtaining an image of a plurality of structures on a substrate, wherein each of the plurality of structures is formed onto the substrate by transferring a corresponding pattern of a design layout; obtaining, from the image, a displacement for each of the structures with respect to a reference point for that structure; and assigning each of the structures into one of a plurality of groups based on the displacement.Type: ApplicationFiled: April 20, 2017Publication date: May 16, 2019Applicant: ASML NETHERLANDS B.V.Inventors: Marinus JOCHEMSEN, Scott Anderson MIDDLEBROOKS, Stefan HUNSCHE, Te-Sheng WANG
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Publication number: 20180321596Abstract: A method including measuring a value of a directly measureable processing parameter of a patterning process from a portion of a substrate produced by the patterning process; obtaining a relationship between the directly measureable processing parameter and a not directly measureable processing parameter; and determining a value of the not directly measureable processing parameter from the value of the directly measureable processing parameter and the relationship.Type: ApplicationFiled: September 21, 2016Publication date: November 8, 2018Applicant: ASML Netherlands B.V.Inventor: Te-Sheng WANG
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Publication number: 20180259858Abstract: A method for improving a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic apparatus, the method including: obtaining a relationship of a characteristic of one or more features in the portion with respect to dose; obtaining a value of the characteristic; and obtaining a target dose based on the value of the characteristic and the relationship.Type: ApplicationFiled: December 11, 2015Publication date: September 13, 2018Applicant: ASML Netherlands B.V.Inventors: Gang CHEN, Te-Sheng WANG