Abstract: A device and a method for analyzing a manufacturing apparatus are provided. The device includes a storing unit, a detecting unit, a calculating unit and a determining unit. The storing unit is for storing a supply amount of material. The detecting unit is for continuously detecting the manufacturing apparatus once the material is used during whole of a process to obtain a total usage. The calculating unit is for calculating a usage ratio of the total usage to the supply amount. The determining unit is for determining whether the manufacturing apparatus is operated in a usage trouble operation according to the usage ratio.

Abstract: A chemical-mechanical polishing apparatus comprising at least a polishing platen, a polishing pad, a slurry supplying piping, a polishing pad conditioner, a chemical reagent supplying piping and a splitting piping is provided. The polishing platen has a plurality of slurry outlets disposed thereon and the polishing pad is disposed on the polishing platen. The slurry supplying piping is connected to the bottom of the polishing platen for delivering slurry to the surface of the polishing pad through the slurry outlets. The polishing pad conditioner is disposed over the polishing pad. The chemical reagent supplying piping is connected to the polishing pad conditioner for supplying the chemical reagent to the polishing conditioner. The splitting piping is connected between the slurry supplying piping and the chemical reagent supplying piping for providing chemical reagent to the surface of the polishing pad through the slurry supplying piping and the slurry outlets.

Abstract: A CMP slurry delivery system includes a delivery pipe, a first slurry supply reservoir coupled to the delivery pipe for supplying an abrasive, a second slurry supply reservoir coupled to the delivery pipe for supplying a clean chemical, a third slurry supply reservoir coupled to the delivery pipe for supplying a corrosion inhibitor, and a fourth slurry supply reservoir for supplying an oxidizer.

Abstract: A chemical-mechanical polishing apparatus comprising at least a polishing platen, a polishing pad, a slurry supplying piping, a polishing pad conditioner, a chemical reagent supplying piping and a splitting piping is provided. The polishing platen has a plurality of slurry outlets disposed thereon and the polishing pad is disposed on the polishing platen. The slurry supplying piping is connected to the bottom of the polishing platen for delivering slurry to the surface of the polishing pad through the slurry outlets. The polishing pad conditioner is disposed over the polishing pad. The chemical reagent supplying piping is connected to the polishing pad conditioner for supplying the chemical reagent to the polishing conditioner. The splitting piping is connected between the slurry supplying piping and the chemical reagent supplying piping for providing chemical reagent to the surface of the polishing pad through the slurry supplying piping and the slurry outlets.

Abstract: A CMP slurry delivery system includes a delivery pipe, a first slurry supply reservoir coupled to the delivery pipe for supplying an abrasive, a second slurry supply reservoir coupled to the delivery pipe for supplying a clean chemical, a third slurry supply reservoir coupled to the delivery pipe for supplying a corrosion inhibitor, and a fourth slurry supply reservoir for supplying an oxidizer.

Abstract: A semiconductor wafer has a top surface and an edge bevel surface, and a first material layer and a second material layer are respectively formed on the top surface and the edge bevel surface. A surface chemical mechanical polishing (surface CMP) process is performed to polish and remove portions of the first material layer down to a first thickness, and a rim CMP process is performed to completely remove the second material layer on the edge bevel surface down to the edge bevel surface thereafter to achieve a smooth surface of the edge bevel surface. Finally, a chemical cleaning process is performed to clean the edge bevel surface and the top surface, and the semiconductor wafer is dried thereafter.

Abstract: A semiconductor wafer has a top surface and an edge bevel surface, and a first material layer and a second material layer are respectively formed on the top surface and the edge bevel surface. A surface chemical mechanical polishing (surface CMP) process is performed to polish and remove portions of the first material layer down to a first thickness, and a rim CMP process is performed to completely remove the second material layer on the edge bevel surface down to the edge bevel surface thereafter to achieve a smooth surface of the edge bevel surface. Finally, a chemical cleaning process is performed to clean the edge bevel surface and the top surface, and the semiconductor wafer is dried thereafter.