Abstract: A semiconductor device including vertical transistors with a back side power structure, and methods of making the same are described. In one example, a described semiconductor structure includes: a gate structure including a gate pad and a gate contact on the gate pad; a first source region disposed below the gate pad; a first drain region disposed on the gate pad, wherein the first source region, the first drain region and the gate structure form a first transistor; a second source region disposed below the gate pad; a second drain region disposed on the gate pad, wherein the second source region, the second drain region and the gate structure form a second transistor; and at least one metal line that is below the first source region and the second source region, and is electrically connected to at least one power supply.

Abstract: An integrated circuit includes multiple backside conductive layers disposed over a backside of a substrate. The multiple backside conductive layers each includes conductive segments. The conductive segments in at least one of the backside conductive layers are configured to transmit one or more power signals. The conductive segments of the multiple backside conductive layers cover select areas of the backside of the substrate, thereby leaving other areas of the backside of the substrate exposed.

Abstract: A motor control apparatus receives a DC power source through a DC terminal and is coupled to a motor. The motor control apparatus includes a brake, an inverter, and a controller. The brake is coupled to the inverter. The brake includes an energy-consuming component and a switch component. The controller controls the inverter to convert the DC power source to drive the motor. When the controller determines that the DC power source is interrupted, the controller stops controlling the inverter, and the switch component is self-driven turned on so that a back electromotive force generated by the motor is consumed through the energy-consuming component.

Abstract: A method of macro placement includes partitioning an entire region of a semiconductor chip into sub-regions; determining a packing sequence of a plurality of movable macros in the sub-region; extracting search points of a plurality of placed blocks in the sub-region with respect to one of the movable macros; determining a feasible region associated with the search point; packing said movable macro in the feasible region; evaluating a legalizing cost function; and determining whether a value of the evaluated legalizing cost function is less than a predetermined threshold value.

Abstract: A method of macro placement includes partitioning an entire region of a semiconductor chip into sub-regions; determining a packing sequence of a plurality of movable macros in the sub-region; extracting search points of a plurality of placed blocks in the sub-region with respect to one of the movable macros; determining a feasible region associated with the search point; packing said movable macro in the feasible region; evaluating a legalizing cost function; and determining whether a value of the evaluated legalizing cost function is less than a predetermined threshold value.