Abstract: The presently claimed invention relates to compositions and methods for inhibition of etching. The presently claimed invention particularly relates to a composition and methods for inhibition of tungsten etching.

Abstract: The presently claimed invention relates to compositions and methods for inhibition of etching. The presently claimed invention particularly relates to a composition and methods for inhibition of tungsten etching.

Abstract: The presently claimed invention relates to a chemical-mechanical polishing (CMP) composition and chemical-mechanical polishing (CMP) methods. The presently claimed invention particularly relates to a composition and process for chemical-mechanical polishing of substrates containing copper and ruthenium, specifically, semiconductor substrates containing copper and ruthenium.

Abstract: The presently claimed invention relates to dielectric polishing composition and methods thereof. The presently claimed invention particularly relates to a composition comprising: (A) surface-modified colloidal silica particles comprising a negatively-charged group on the surface of the particles, wherein the surface-modified colloidal silica particles have a negative charge, a particle size of from 60 nm to 200 nm, and a zeta potential <?35 mV at a pH in the range of from ?2.0 to ?4.5; (B) first corrosion inhibitor selected from at least one guanidine derivative; (C) second corrosion inhibitor selected from polyacrylamides or polyacrylamide copolymers; (D) at least one iron (III) oxidizer; (E) at least one silicon oxide removal rate enhancer selected from phosphoric acid and salts thereof; (F) at least one stabilizer; and (G) an aqueous medium, wherein the pH of the composition is in the range of from ?2.0 to ?4.5.

Abstract: The presently claimed subject matter is directed to a chemical mechanical polishing (CMP) composition comprising inorganic particles, at least one organic compound comprising an amino group and/or at least one acid group (Y), potassium persulfate, at least one corrosion inhibitor and an aqueous medium for polishing substrates of the semiconductor industry comprising cobalt and/or a cobalt alloy and TiN and/or TaN.

Abstract: The presently claimed invention relates to a chemical-mechanical polishing (CMP) composition and chemical-mechanical polishing (CMP) methods. The presently claimed invention particularly relates to a composition and process for chemical-mechanical polishing of substrates containing copper and ruthenium, specifically, semiconductor substrates containing copper and ruthenium.

Abstract: The presently claimed invention relates to a chemical-mechanical polishing (CMP) composition and chemical-mechanical polishing (CMP) methods. The presently claimed invention particularly relates to a composition and process for chemical-mechanical polishing of substrates containing copper and ruthenium, specifically, semiconductor substrates containing copper and ruthenium.

Abstract: The presently claimed invention relates to a chemical-mechanical polishing (CMP) composition and chemical-mechanical polishing (CMP) methods. The presently claimed invention particularly relates to a composition and process for chemical-mechanical polishing of substrates containing copper and ruthenium, specifically, semiconductor substrates containing copper and ruthenium.

Abstract: The presently claimed invention relates to compositions and methods for inhibition of etching. The presently claimed invention particularly relates to a composition and methods for inhibition of tungsten etching.

Abstract: The presently claimed invention relates to compositions and methods for inhibition of etching. The presently claimed invention particularly relates to a composition and methods for inhibition of tungsten etching.

Abstract: The presently claimed invention relates to a chemical-mechanical polishing (CMP) composition and chemical-mechanical polishing (CMP) methods. The presently claimed invention particularly relates to a composition and process for chemical-mechanical polishing of substrates containing copper and ruthenium, specifically, semiconductor substrates containing copper and ruthenium.

Abstract: The presently claimed invention relates to a chemical-mechanical polishing (CMP) composition and chemical-mechanical polishing (CMP) methods. The presently claimed invention particularly relates to a composition and process for chemical-mechanical polishing of substrates containing copper and ruthenium, specifically, semiconductor substrates containing copper and ruthenium.

Abstract: A chemical mechanical polishing composition may be used for chemical mechanical polishing of a substrate including (i) cobalt and/or (ii) a cobalt alloy and (iii) TiN and/or TaN, wherein the CMP composition includes (A) inorganic particles (B) at least one organic compound including an amino-group and an acid group, the compound including n amino groups and at least n+1 acidic protons, a being a integer ?1; (C) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the MP composition; and (D) an aqueous medium. The CMP composition may have a pH of more than 6 and less than 9.

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy and (iii) Ti N and/or TaN, wherein the CMP composition (Q) comprises (E) Inorganic particles (F) at least one organic compound comprising an amino-group and an acid group (Y), wherein said compound comprises n amino groups and at least n+1 acidic protons, wherein n is a integer?1. (G) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the respective CMP composition, (H) an aqueous medium wherein the CMP composition (Q) has a pH of more than 6 and less than 9.

Abstract: A post chemical-mechanical-polishing (post-CMP) cleaning composition including: (A) polyethylene glycol (PEG) with a mass average molar mass (Mw) in the range of from 400 to 8,000 g/mol, (B) an anionic polymer selected from poly(acrylic acid) (PAA), acrylic acid-maleic acid copolymers, polyaspartic acid (PASA), polyglutamic acid (PGA), polyvinylphosphonic acid, polyvinylsulfonic acid, poly(styrenesulfonic acid), polycarboxylate ethers (PCE), PEG-phosphorous acids, and copolymers of the polymers thereof, and (C) water, where the pH of the composition is from 7.0 to 10.5.

Abstract: Described is a post chemical-mechanical-polishing (post-CMP) cleaning composition comprising or consisting of: (A) one or more nonionic polymers selected from the group consisting of poly-acrylamides, polyhydroxyethyl(meth)acrylates (PHE(M)A), polyvinylpyrrolidone (PVP), polyvinyl alcohol (PVA), polymers of formula (I), and mixtures thereof, wherein R1 is hydrogen, methyl, ethyl, n-propyl, iso-propyl, n-butyl, iso-butyl, or sec-butyl, R2 is hydrogen or methyl, and n is an integer, (B) poly(acrylic acid) (PAA) or acrylic acid-maleic acid copolymer with a mass average molar mass (Mw) of up to 10,000 g/mol, and (C) water, wherein the pH of the composition is in the range of from 7.0 to 10.5.

Abstract: The presently claimed subject matter is directed to a chemical mechanical polishing (CMP) composition comprising inorganic particles, at least one organic compound comprising an amino group and/or at least one acid group (Y), potassium persulfate, at least one corrosion inhibitor and an aqueous medium for polishing substrates of the semiconductor industry comprising cobalt and/or a cobalt alloy and TiN and/or TaN.

Abstract: Described is a post chemical-mechanical-polishing (post-CMP) cleaning composition comprising or consisting of: (A) one or more nonionic polymers selected from the group consisting of poly-acrylamides, polyhydroxyethyl(meth)acrylates (PHE(M)A), polyvinylpyrrolidone (PVP), polyvinyl alcohol (PVA), polymers of formula (I), and mixtures thereof, wherein R1 is hydrogen, methyl, ethyl, n-propyl, iso-propyl, n-butyl, iso-butyl, or sec-butyl, R2 is hydrogen or methyl, and n is an integer, (B) poly(acrylic acid) (PAA) or acrylic acid-maleic acid copolymer with a mass average molar mass (Mw) of up to 10,000 g/mol, and (C) water, wherein the pH of the composition is in the range of from 7.0 to 10.5.

Abstract: A post chemical-mechanical-polishing (post-CMP) cleaning composition including: (A) polyethylene glycol (PEG) with a mass average molar mass (Mw) in the range of from 400 to 8,000 g/mol, (B) an anionic polymer selected from poly(acrylic acid) (PAA), acrylic acid-maleic acid copolymers, polyaspartic acid (PASA), polyglutamic acid (PGA), polyvinylphosphonic acid, polyvinylsulfonic acid, poly(styrenesulfonic acid), polycarboxylate ethers (PCE), PEG-phosphorous acids, and copolymers of the polymers thereof, and (C) water, where the pH of the composition is from 7.0 to 10.5.

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy and (iii) Ti N and/or TaN, wherein the CMP composition (Q) comprises (E) Inorganic particles (F) at least one organic compound comprising an amino-group and an acid group (Y), wherein said compound comprises n amino groups and at least n+1 acidic protons, wherein n is a integer?1. (G) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the respective CMP composition, (H) an aqueous medium wherein the CMP composition (Q) has a pH of more than 6 and less than 9.