Patents by Inventor Teyuan Yin

Teyuan Yin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080261397
    Abstract: There is provided a method for manufacturing a semiconductor device, which includes the steps of: providing a semiconductor substrate including a gate, a source and a drain, wherein the gate includes a gate dielectric layer disposed on the semiconductor substrate; forming an etching barrier layer on the semiconductor substrate; and subjecting the resulted structure to hydrogen annealing. According to the present invention, the interface energy level between a gate dielectric layer and a semiconductor substrate is lowered and the reliability of the semiconductor device is improved.
    Type: Application
    Filed: April 1, 2008
    Publication date: October 23, 2008
    Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
    Inventors: Teyuan Yin, Chipo Liao