Patents by Inventor Te-Yung LIU

Te-Yung LIU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180308949
    Abstract: A method for fabricating a semiconductor device is provided including an opening in a gate electrode layer to form two spaced apart gate electrode layers. An oxidation or nitridation treatment is performed in a region between the two spaced apart gate electrode layers. A first insulating layer is formed in the opening between the two spaced apart gate electrode layers.
    Type: Application
    Filed: October 5, 2017
    Publication date: October 25, 2018
    Inventors: Chih-Han LIN, Shih-Chang TSAI, Wen-Shuo HSIEH, Te-Yung LIU