Abstract: Disclosed is a semiconductor package with increased thermal radiation efficiency, which includes: a first die having signal and dummy regions and including first vias in the signal region, a second die on the first die and including second vias in the signal region, first die pads on a top surface of the first die and coupled to the first vias, first connection terminals on the first die pads which couple the second vias to the first vias, second die pads in the dummy region and on the top surface of the first die, and second connection terminals on the second die pads and electrically insulated from the first vias and the second vias. Each of the second die pads has a rectangular planar shape whose major axis is provided along a direction that leads away from the signal region.

Abstract: A method of cutting a substrate including a device region and a scribe lane region includes selectively forming a passivation layer in the device region of the substrate, selectively forming a self-assembled monolayer on the passivation layer, and performing plasma cutting in the scribe lane region.

Abstract: A method of cutting a substrate including a device region and a scribe lane region includes selectively forming a passivation layer in the device region of the substrate, selectively forming a self-assembled monolayer on the passivation layer, and performing plasma cutting in the scribe lane region.

Abstract: A semiconductor package includes a first semiconductor chip on a substrate and having a plurality of through-silicon vias (TSVs). A second semiconductor chip having an active layer is on the first semiconductor chip. An adhesive layer is between the first semiconductor chip and the active layer. Connection terminals extend through the adhesive layer and are connected to the TSVs and the active layer. Side surfaces of the adhesive layer are aligned with side surfaces of the second semiconductor chip.

Abstract: A method of manufacturing a chip-stacked semiconductor package, the method including preparing a base wafer including a plurality of first chips each having a through-silicon via (TSV); bonding the base wafer including the plurality of first chips to a supporting carrier; preparing a plurality of second chips; forming stacked chips by bonding the plurality of second chips to the plurality of first chips; sealing the stacked chips with a sealing portion; and separating the stacked chips from each other.

Abstract: A substrate of a semiconductor package includes a first wiring substrate having a first surface and a second surface facing each other, the first surface having a semiconductor chip mounted thereon, a first support carrier, and an adhesive film connecting the second surface and the first support carrier.

Abstract: A substrate of a semiconductor package includes a first wiring substrate having a first surface and a second surface facing each other, the first surface having a semiconductor chip mounted thereon, a first support carrier, and an adhesive film connecting the second surface and the first support carrier.

Abstract: A substrate of a semiconductor package includes a first wiring substrate having a first surface and a second surface facing each other, the first surface having a semiconductor chip mounted thereon, a first support carrier, and an adhesive film connecting the second surface and the first support carrier.

Abstract: A semiconductor package includes a first semiconductor chip on a substrate and having a plurality of through-silicon vias (TSVs). A second semiconductor chip having an active layer is on the first semiconductor chip. An adhesive layer is between the first semiconductor chip and the active layer. Connection terminals extend through the adhesive layer and are connected to the TSVs and the active layer. Side surfaces of the adhesive layer are aligned with side surfaces of the second semiconductor chip.

Abstract: In one embodiment, a semiconductor package includes a first insulating body and a first semiconductor chip having a first active surface and a first back surface opposite the first active surface. The first semiconductor chip is disposed within the first insulating body. The first active surface is exposed by the first insulating body. The first back surface is substantially surrounded by the first insulating body. The semiconductor package includes a post within the first insulating body and adjacent to a side of the first semiconductor chip.

Abstract: A method of manufacturing a chip-stacked semiconductor package, the method including preparing a base wafer including a plurality of first chips each having a through-silicon via (TSV); bonding the base wafer including the plurality of first chips to a supporting carrier; preparing a plurality of second chips; forming stacked chips by bonding the plurality of second chips to the plurality of first chips; sealing the stacked chips with a sealing portion; and separating the stacked chips from each other.

Abstract: A method of manufacturing a chip-stacked semiconductor package, the method including preparing a base wafer including a plurality of first chips each having a through-silicon via (TSV); bonding the base wafer including the plurality of first chips to a supporting carrier; preparing a plurality of second chips; forming stacked chips by bonding the plurality of second chips to the plurality of first chips; sealing the stacked chips with a sealing portion; and separating the stacked chips from each other.

Abstract: A method of forming a semiconductor package having a large capacity and a reduced or minimized volume includes: attaching a semiconductor substrate on a support substrate using an adhesive layer, wherein the semiconductor substrate includes a plurality of first semiconductor chips and a chip cutting region, wherein first and second ones of the plurality of first semiconductor chips are separated each other by the chip cutting region, and the semiconductor substrate includes a first surface on which an active area is formed and a second surface opposite to the first surface; forming a first cutting groove having a first kerf width, between the first and second ones of the plurality of first semiconductor chips, so that the semiconductor substrate is separated into a plurality of first semiconductor chips; attaching a plurality of second semiconductor chips corresponding to the first semiconductor chips, respectively, to the plurality of first semiconductor chips; forming a molding layer so as to fill the first

Abstract: A substrate of a semiconductor package includes a first wiring substrate having a first surface and a second surface facing each other, the first surface having a semiconductor chip mounted thereon, a first support carrier, and an adhesive film connecting the second surface and the first support carrier.

Abstract: A method of forming a semiconductor package having a large capacity and a reduced or minimized volume includes: attaching a semiconductor substrate on a support substrate using an adhesive layer, wherein the semiconductor substrate includes a plurality of first semiconductor chips and a chip cutting region, wherein first and second ones of the plurality of first semiconductor chips are separated each other by the chip cutting region, and the semiconductor substrate includes a first surface on which an active area is formed and a second surface opposite to the first surface; forming a first cutting groove having a first kerf width, between the first and second ones of the plurality of first semiconductor chips, so that the semiconductor substrate is separated into a plurality of first semiconductor chips; attaching a plurality of second semiconductor chips corresponding to the first semiconductor chips, respectively, to the plurality of first semiconductor chips; forming a molding layer so as to fill the first

Abstract: A fabricating method of a semiconductor device may include forming a semiconductor die on a supporting wafer, and picking up the die from the wafer by attaching to the die a transfer unit, the transfer unit including a head unit configured to enable twisting movement, and performing the twisting movement. A fabricating method of a semiconductor device may include forming a first semiconductor device on a supporting wafer; and picking up the first semiconductor device from the wafer, moving the first semiconductor device onto a second semiconductor device, and bonding the first semiconductor device to the second semiconductor device while maintaining the first semiconductor device oriented so that a surface faces upwardly. A fabricating method of a semiconductor device may include forming a first semiconductor device on a supporting wafer, attaching to the first semiconductor device a transfer unit configured to enable twisting movement, and performing the twisting movement.

Abstract: A method of forming a semiconductor package includes attaching a semiconductor substrate on a support substrate, wherein the semiconductor substrate includes a plurality of first semiconductor chips and a chip cutting region that separates respective ones of the semiconductor chips. A first cutting groove is formed that has a first kerf width between first and second ones of the plurality of first semiconductor chips. A plurality of second semiconductor chips is attached to the plurality of first semiconductor chips. A molding layer is formed so as to fill the first cutting groove and a second cutting groove having a second kerf width that is less than the first kerf width is formed in the molding layer so as to form individual molding layers covering one of the plurality of first semiconductor chips and one of the plurality of second semiconductor chips.

Abstract: A semiconductor package that stably protects an internal semiconductor chip from external shocks, and a method of manufacturing the semiconductor package is disclosed. The semiconductor package includes a first semiconductor chip including a first body layer having a first surface, a second surface, and a lateral surface between the first surface and the second surface, and a first protective layer that exposes an edge portion of the first surface and forms a step difference with the first surface; an encapsulation structure that covers a lateral surface of the first body layer and the edge portion of the first surface so as to encapsulate the first semiconductor chip to have a locking structure; and a first conductive terminal formed on the first body layer through the protective layer.

Abstract: A semiconductor package may include a semiconductor chip, a molding layer which molds the semiconductor chip, and an interconnection which extends crossing an interface between the semiconductor chip and the molding layer and connects the semiconductor chip to an outside, wherein a shape of the interconnection is changed along the extended length thereof. According to the present invention, even if a mechanical stress or a thermal stress is applied to an interconnection, a crack does not occur in the interconnection or the interconnection is not disconnected. Therefore, a reliability of the semiconductor package is improved.

Abstract: A method of manufacturing a chip-stacked semiconductor package, the method including preparing a base wafer including a plurality of first chips each having a through-silicon via (TSV); bonding the base wafer including the plurality of first chips to a supporting carrier; preparing a plurality of second chips; forming stacked chips by bonding the plurality of second chips to the plurality of first chips; sealing the stacked chips with a sealing portion; and separating the stacked chips from each other.