Patents by Inventor Teck-Chong Lee

Teck-Chong Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200083591
    Abstract: A semiconductor device package includes a glass carrier, a package body, a first circuit layer and a first antenna layer. The glass carrier has a first surface and a second surface opposite to the first surface. The package body is disposed on the first surface of the glass carrier. The package body has an interconnection structure penetrating the package body. The first circuit layer is disposed on the package body. The first circuit layer has a redistribution layer (RDL) electrically connected to the interconnection structure of the package body. The first antenna layer is disposed on the second surface of the glass carrier.
    Type: Application
    Filed: August 19, 2019
    Publication date: March 12, 2020
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Sheng-Chi HSIEH, Chen-Chao WANG, Teck-Chong LEE, Chien-Hua CHEN
  • Publication number: 20200075571
    Abstract: A semiconductor device package includes a carrier, an electronic component, a protection layer, a conductive layer and an integrated passive device (IPD). The electronic component is disposed on the carrier. The protection layer covers the carrier and the electronic component. The conductive layer is disposed on the protection layer and penetrates the protection layer to be electrically connected to the electronic component. The IPD is disposed on the conductive layer and electrically connected to the electronic component through the conductive layer.
    Type: Application
    Filed: September 4, 2019
    Publication date: March 5, 2020
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Chien-Hua CHEN, Teck-Chong LEE
  • Publication number: 20190393297
    Abstract: A capacitor bank structure includes a plurality of capacitors, a protection material, a first dielectric layer and a plurality of first pillars. The capacitors are disposed side by side. Each of the capacitors has a first surface and a second surface opposite to the first surface, and includes a plurality of first electrodes and a plurality of second electrodes. The first electrodes are disposed adjacent to the first surface for external connection, and the second electrodes are disposed adjacent to the second surface for external connection. The protection material covers the capacitors, sidewalls of the first electrodes and sidewalls of the second electrodes, and has a first surface corresponding to the first surface of the capacitor and a second surface corresponding to the second surface of the capacitor. The first dielectric layer is disposed on the first surface of the protection material, and defines a plurality of openings to expose the first electrodes.
    Type: Application
    Filed: June 20, 2019
    Publication date: December 26, 2019
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Cheng-Yuan KUNG, Chien-Hua CHEN, Teck-Chong LEE, Hung-Yi LIN, Pao-Nan LEE, Hsin Hsiang WANG, Min-Tzu HSU, Po-Hao CHEN
  • Patent number: 10490341
    Abstract: An electrical device comprises a substrate, a first dielectric layer, a first die, an adjustable inductor and a second die. The substrate has a first surface. The first dielectric layer is disposed on the first surface of the substrate and has a first surface. The first die is surrounded by the first dielectric layer. The adjustable inductor is electrically connected to the first die. The adjustable inductor comprises a plurality of pillars surrounded by the first dielectric layer, a plurality of first metal strips disposed on the first surface of the first dielectric layer and electrically connected to the pillars, and a plurality of second metal strips disposed on the first surface of the first dielectric layer and electrically connected to the pillars. A width of at least one of the second metal strips is different than a width of at least one of the first metal strips. The second die is electrically connected to the adjustable inductor.
    Type: Grant
    Filed: August 17, 2017
    Date of Patent: November 26, 2019
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Cheng-Yuan Kung, Hung-Yi Lin, Teck-Chong Lee, Sheng-Chi Hsieh, Chien-Hua Chen
  • Patent number: 10475718
    Abstract: A semiconductor device package includes a dielectric layer, a first RDL, a second RDL, an inductor, a first electronic component and a second electronic component. The first RDL is adjacent to a first surface of the dielectric layer, and the first RDL includes first conductive pieces. The second RDL is adjacent to a second surface of the dielectric layer, and the second RDL includes second conductive pieces. The inductor is disposed in the dielectric layer. The inductor includes induction pillars, wherein each of the induction pillars is disposed through the dielectric layer, and each of the induction pillars is interconnected between a respective one of the first conductive pieces of the first RDL and a respective one of the second conductive pieces of the second RDL. The first electronic component and the second electronic component are between the first RDL and the second RDL, and electrically connected to each other through the inductor.
    Type: Grant
    Filed: May 18, 2017
    Date of Patent: November 12, 2019
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Chien-Hua Chen, Hung-Yi Lin, Cheng-Yuan Kung, Teck-Chong Lee, Shiuan-Yu Lin
  • Publication number: 20190067261
    Abstract: An integrated passive component comprises a capacitor, a first passivation layer, an inductor, an insulation layer and an external contact. The first passivation layer surrounds the capacitor. The inductor is on the first passivation layer and electrically connected to the capacitor. The inductor comprises a plurality of conductive pillars. The insulation layer is on the first passivation layer and surrounds each of the conductive pillars. The insulation layer comprises a first surface adjacent to the first passivation layer, a second surface opposite to the first surface, and a side surface extending between the first surface and the second surface. A ratio of a width of each of the conductive pillars to a height of each of the conductive pillars is about 1:7. The external contact is electrically connected to the inductor and contacts the second surface of the insulation layer and the side surface of the insulation layer.
    Type: Application
    Filed: August 30, 2017
    Publication date: February 28, 2019
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Yung-Shun CHANG, Teck-Chong LEE, Chien-Hua CHEN
  • Publication number: 20190057809
    Abstract: An electrical device comprises a substrate, a first dielectric layer, a first die, an adjustable inductor and a second die. The substrate has a first surface. The first dielectric layer is disposed on the first surface of the substrate and has a first surface. The first die is surrounded by the first dielectric layer. The adjustable inductor is electrically connected to the first die. The adjustable inductor comprises a plurality of pillars surrounded by the first dielectric layer, a plurality of first metal strips disposed on the first surface of the first dielectric layer and electrically connected to the pillars, and a plurality of second metal strips disposed on the first surface of the first dielectric layer and electrically connected to the pillars. A width of at least one of the second metal strips is different than a width of at least one of the first metal strips. The second die is electrically connected to the adjustable inductor.
    Type: Application
    Filed: August 17, 2017
    Publication date: February 21, 2019
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Cheng-Yuan KUNG, Hung-Yi LIN, Teck-Chong LEE, Sheng-Chi HSIEH, Chien-Hua CHEN
  • Publication number: 20180337164
    Abstract: A semiconductor device package includes a dielectric layer, a first RDL, a second RDL, an inductor, a first electronic component and a second electronic component. The first RDL is adjacent to a first surface of the dielectric layer, and the first RDL includes first conductive pieces. The second RDL is adjacent to a second surface of the dielectric layer, and the second RDL includes second conductive pieces. The inductor is disposed in the dielectric layer. The inductor includes induction pillars, wherein each of the induction pillars is disposed through the dielectric layer, and each of the induction pillars is interconnected between a respective one of the first conductive pieces of the first RDL and a respective one of the second conductive pieces of the second RDL. The first electronic component and the second electronic component are between the first RDL and the second RDL, and electrically connected to each other through the inductor.
    Type: Application
    Filed: May 18, 2017
    Publication date: November 22, 2018
    Inventors: Chien-Hua CHEN, Hung-Yi LIN, Cheng-Yuan KUNG, Teck-Chong LEE, Shiuan-Yu LIN
  • Publication number: 20180138262
    Abstract: A semiconductor device package includes a substrate, a first patterned conductive layer, a second patterned conductive layer, a dielectric layer, a third patterned conductive layer and a connector. The substrate has a top surface. The first patterned conductive layer is on the top surface of the substrate. The second patterned conductive layer contacts the first patterned conductive layer. The second patterned conductive layer includes a first portion, a second portion and a third portion. The second portion is connected between the first portion and the third portion. The dielectric layer is on the top surface of the substrate. The dielectric layer covers the first patterned conductive layer and surrounds the second portion and the third portion of the second patterned conductive layer. The first portion of the second patterned conductive layer is disposed on the dielectric layer.
    Type: Application
    Filed: November 14, 2016
    Publication date: May 17, 2018
    Inventors: Chien-Hua CHEN, Teck-Chong LEE
  • Publication number: 20180138113
    Abstract: A semiconductor device package includes a semiconductor chip, a glass substrate having a first surface facing the semiconductor chip and a second surface opposite to the first surface, the glass substrate defining a hole that traverses the glass substrate from the first surface to the second surface, an interconnect structure disposed in the hole, and a conductive bump disposed adjacent to the interconnect structure and protruded from the second surface, wherein the conductive bump and the interconnect structure include a same material.
    Type: Application
    Filed: November 15, 2016
    Publication date: May 17, 2018
    Inventors: Chien-Hua CHEN, Teck-Chong LEE, Yung-Shun CHANG
  • Patent number: 9929132
    Abstract: A semiconductor device includes a substrate, a seed layer, a first patterned metal layer, a dielectric layer and a second metal layer. The seed layer is disposed on a surface of the substrate. The first patterned metal layer is disposed on the seed layer and has a first thickness. The first patterned metal layer includes a first part and a second part. The dielectric layer is disposed on the first part of the first patterned metal layer. The second metal layer is disposed on the dielectric layer and has a second thickness, where the first thickness is greater than the second thickness. The first part of the first patterned metal layer, the dielectric layer and the second metal layer form a capacitor. The first part of the first patterned metal layer is a lower electrode of the capacitor, and the second part of the first patterned metal layer is an inductor.
    Type: Grant
    Filed: January 13, 2017
    Date of Patent: March 27, 2018
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Teck-Chong Lee, Chien-Hua Chen, Yung-Shun Chang, Pao-Nan Lee
  • Patent number: 9881917
    Abstract: A semiconductor device and a method for manufacturing the same is described. The semiconductor device includes a substrate, a first capacitor and a second capacitor. The first capacitor includes a first conductive layer, a first insulating layer and a second conductive layer. The first conductive layer is disposed on the substrate. The first insulating layer is disposed on the first conductive layer and has a first peripheral edge. The second conductive layer is disposed on the first insulating layer and has a second peripheral edge. The second capacitor includes a third conductive layer, a second insulating layer and the second conductive layer. The second insulating layer is disposed on the second conductive layer and has a third peripheral edge. The third conductive layer is disposed on the second insulating layer and has a fourth peripheral edge. The first, second, third and fourth peripheral edges are aligned with one another.
    Type: Grant
    Filed: July 16, 2015
    Date of Patent: January 30, 2018
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Hsu-Chiang Shih, Sheng-Chi Hsieh, Chien-Hua Chen, Teck-Chong Lee
  • Patent number: 9837352
    Abstract: A semiconductor device includes a substrate, at least one integrated passive device, a first redistribution layer, a second redistribution layer, and conductive vias. The at least one integrated passive device includes at least one capacitor disposed adjacent to a first surface of the substrate. The first redistribution layer is disposed adjacent to the first surface of the substrate. The second redistribution layer is disposed adjacent to a second surface of the substrate. The conductive vias extend through the substrate, and electrically connect the first redistribution layer and the second redistribution layer.
    Type: Grant
    Filed: June 10, 2016
    Date of Patent: December 5, 2017
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Yung-Shun Chang, Chien-Hua Chen, Teck-Chong Lee
  • Publication number: 20170133360
    Abstract: A semiconductor device includes a substrate, a seed layer, a first patterned metal layer, a dielectric layer and a second metal layer. The seed layer is disposed on a surface of the substrate. The first patterned metal layer is disposed on the seed layer and has a first thickness. The first patterned metal layer includes a first part and a second part. The dielectric layer is disposed on the first part of the first patterned metal layer. The second metal layer is disposed on the dielectric layer and has a second thickness, where the first thickness is greater than the second thickness. The first part of the first patterned metal layer, the dielectric layer and the second metal layer form a capacitor. The first part of the first patterned metal layer is a lower electrode of the capacitor, and the second part of the first patterned metal layer is an inductor.
    Type: Application
    Filed: January 13, 2017
    Publication date: May 11, 2017
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Teck-Chong LEE, Chien-Hua CHEN, Yung-Shun CHANG, Pao-Nan LEE
  • Publication number: 20170103946
    Abstract: A semiconductor device includes a substrate, at least one integrated passive device, a first redistribution layer, a second redistribution layer, and conductive vias. The at least one integrated passive device includes at least one capacitor disposed adjacent to a first surface of the substrate. The first redistribution layer is disposed adjacent to the first surface of the substrate. The second redistribution layer is disposed adjacent to a second surface of the substrate. The conductive vias extend through the substrate, and electrically connect the first redistribution layer and the second redistribution layer.
    Type: Application
    Filed: June 10, 2016
    Publication date: April 13, 2017
    Inventors: Yung-Shun Chang, Chien-Hua Chen, Teck-Chong Lee
  • Patent number: 9577027
    Abstract: A semiconductor device includes a substrate, a seed layer, a first patterned metal layer, a dielectric layer and a second metal layer. The seed layer is disposed on a surface of the substrate. The first patterned metal layer is disposed on the seed layer and has a first thickness. The first patterned metal layer includes a first part and a second part. The dielectric layer is disposed on the first part of the first patterned metal layer. The second metal layer is disposed on the dielectric layer and has a second thickness, where the first thickness is greater than the second thickness. The first part of the first patterned metal layer, the dielectric layer and the second metal layer form a capacitor. The first part of the first patterned metal layer is a lower electrode of the capacitor, and the second part of the first patterned metal layer is an inductor.
    Type: Grant
    Filed: May 28, 2015
    Date of Patent: February 21, 2017
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Teck-Chong Lee, Chien-Hua Chen, Yung-Shun Chang, Pao-Nan Lee
  • Publication number: 20170047276
    Abstract: The present disclosure relates to a semiconductor device package and a method for manufacturing the same. The semiconductor device package comprises a substrate, a first patterned conductive layer, an insulator layer, a second patterned conductive layer, and a dielectric layer. The first patterned conductive layer is disposed on a surface of the substrate. The insulator layer is disposed on the surface of the substrate and covers the first patterned conductive layer. The second patterned conductive layer is fully encapsulated by the insulator layer. The dielectric layer is disposed on the insulator layer.
    Type: Application
    Filed: August 13, 2015
    Publication date: February 16, 2017
    Inventors: Chien-Hua CHEN, Teck-Chong LEE, Chi-Han CHEN, Sheng-Chi HSIEH
  • Publication number: 20170018550
    Abstract: A semiconductor device and a method for manufacturing the same is described. The semiconductor device includes a substrate, a first capacitor and a second capacitor. The first capacitor includes a first conductive layer, a first insulating layer and a second conductive layer. The first conductive layer is disposed on the substrate. The first insulating layer is disposed on the first conductive layer and has a first peripheral edge. The second conductive layer is disposed on the first insulating layer and has a second peripheral edge. The second capacitor includes a third conductive layer, a second insulating layer and the second conductive layer. The second insulating layer is disposed on the second conductive layer and has a third peripheral edge. The third conductive layer is disposed on the second insulating layer and has a fourth peripheral edge. The first, second, third and fourth peripheral edges are aligned with one another.
    Type: Application
    Filed: July 16, 2015
    Publication date: January 19, 2017
    Inventors: Hsu-Chiang SHIH, Sheng-Chi HSIEH, Chien-Hua CHEN, Teck-Chong LEE
  • Publication number: 20150349048
    Abstract: A semiconductor device includes a substrate, a seed layer, a first patterned metal layer, a dielectric layer and a second metal layer. The seed layer is disposed on a surface of the substrate. The first patterned metal layer is disposed on the seed layer and has a first thickness. The first patterned metal layer includes a first part and a second part. The dielectric layer is disposed on the first part of the first patterned metal layer. The second metal layer is disposed on the dielectric layer and has a second thickness, where the first thickness is greater than the second thickness. The first part of the first patterned metal layer, the dielectric layer and the second metal layer form a capacitor. The first part of the first patterned metal layer is a lower electrode of the capacitor, and the second part of the first patterned metal layer is an inductor.
    Type: Application
    Filed: May 28, 2015
    Publication date: December 3, 2015
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Teck-Chong LEE, Chien-Hua CHEN, Yung-Shun CHANG, Pao-Nan LEE
  • Patent number: 8853819
    Abstract: The present invention relates to a semiconductor structure having an integrated passive network and a method for making the same. The semiconductor structure includes a substrate which can be an interposer. The substrate can include a plurality of conductive vias. In various embodiments, the substrate includes a dielectric layer disposed thereon, the dielectric layer having an opening forming a straight hole allowing electrical connection between the passive network and the conductive via. The passive network includes a series of patterned dielectric and conductive layers, forming passive electronic components. In an embodiment, the passive device includes a common resistor coupled to a pair of inductors, each of the inductors coupled to a capacitor. In another embodiment, the passive device includes a resistor and an inductor electrically connected to each other, a bottom surface of the inductor coplanar with a bottom surface of the resistor.
    Type: Grant
    Filed: December 27, 2011
    Date of Patent: October 7, 2014
    Assignee: Advanced Semiconductor Engineering, Inc.
    Inventors: Chien-Hua Chen, Teck-Chong Lee, Hsu-Chiang Shih, Meng-Wei Hsieh