Abstract: A capacitor module horizontally mounted on a PCB and including a case including a first side surface, an opposing second side, a first electrode pad and a second electrode pad disposed at the first side surface, and a third electrode pad disposed at the second side surface, and an electrolytic capacitor including a dielectric extending in a first horizontal direction, a first electrode contacting the first electrode pad and a second electrode contacting the second electrode pad, wherein the first electrode pad is spaced apart from second electrode pad in a second horizontal direction.

Abstract: A memory device includes: a first casing; a second casing on the first casing; a memory module in an inner space between the first and second casings; and a plate between the first and second casings, wherein the plate includes an air hole and a wing, and wherein the wing includes: a first segment near an outside of the first and second casings; and a second segment near the inner space, wherein the first segment is located at a level different from a level of the second segment.

Abstract: A capacitor module configured to be horizontally mounted on a PCB and including; a case including a first side surface, an opposing second side, a first electrode pad and a second electrode pad disposed at the first side surface, and a third electrode pad disposed at the second side surface, and an electrolytic capacitor including a dielectric extending in a first horizontal direction, a first electrode contacting the first electrode pad and a second electrode contacting the second electrode pad, wherein the first electrode pad is spaced apart from second electrode pad in a second horizontal direction.

Abstract: A memory device includes: a first casing; a second casing on the first casing; a memory module in an inner space between the first and second casings; and a plate between the first and second casings, wherein the plate includes an air hole and a wing, and wherein the wing includes: a first segment near an outside of the first and second casings; and a second segment near the inner space, wherein the first segment is located at a level different from a level of the second segment.

Abstract: A memory device includes: a first casing; a second casing on the first casing; a memory module in an inner space between the first and second casings; and a plate between the first and second casings, wherein the plate includes an air hole and a wing, and wherein the wing includes: a first segment near an outside of the first and second casings; and a second segment near the inner space, wherein the first segment is located at a level different from a level of the second segment.

Abstract: A solid state drive device includes a housing defining an interior space and first through fourth edges defining a perimeter thereof; and a package substrate module in the interior space. The package substrate module includes a package base substrate, a plurality of semiconductor chips mounted on the package base substrate, and an external connector corresponding to the third edge of the housing. The housing includes at least one groove adjacent to the first edge and a rail unit on each of the second and fourth edges.

Abstract: A memory device includes: a first casing; a second casing on the first casing; a memory module in an inner space between the first and second casings; and a plate between the first and second casings, wherein the plate includes an air hole and a wing, and wherein the wing includes: a first segment near an outside of the first and second casings; and a second segment near the inner space, wherein the first segment is located at a level different from a level of the second segment.

Abstract: A memory device includes: a first casing; a second casing on the first casing; a memory module in an inner space between the first and second casings; and a plate between the first and second casings, wherein the plate includes an air hole and a wing, and wherein the wing includes: a first segment near an outside of the first and second casings; and a second segment near the inner space, wherein the first segment is located at a level different from a level of the second segment.

Abstract: A solid state drive apparatus includes a housing having an inner space and a plurality of vent channels penetrating a first side wall at a first side of the housing and a connector opening penetrating a second side wall at a second side of the housing opposite the first side of the housing, and a package substrate module in the inner space and having a package base substrate and a plurality of semiconductor chips mounted on the package base substrate. Each of the plurality of vent channels extends inwardly from an outer surface of the first side wall to an inner surface of the first side wall such that a vertical level of at least a portion of each of the plurality of vent channels varies between the outer surface and the inner surface.

Abstract: A memory device includes: a first casing; a second casing on the first casing; a memory module in an inner space between the first and second casings; and a plate between the first and second casings, wherein the plate includes an air hole and a wing, and wherein the wing includes: a first segment near an outside of the first and second casings; and a second segment near the inner space, wherein the first segment is located at a level different from a level of the second segment.

Abstract: A solid state drive device includes a housing defining an interior space and first through fourth edges defining a perimeter thereof; and a package substrate module in the interior space. The package substrate module includes a package base substrate, a plurality of semiconductor chips mounted on the package base substrate, and an external connector corresponding to the third edge of the housing. The housing includes at least one groove adjacent to the first edge and a rail unit on each of the second and fourth edges.

Abstract: A solid state drive apparatus includes a housing having an inner space and a plurality of vent channels penetrating a first side wall at a first side of the housing and a connector opening penetrating a second side wall at a second side of the housing opposite the first side of the housing, and a package substrate module in the inner space and having a package base substrate and a plurality of semiconductor chips mounted on the package base substrate. Each of the plurality of vent channels extends inwardly from an outer surface of the first side wall to an inner surface of the first side wall such that a vertical level of at least a portion of each of the plurality of vent channels varies between the outer surface and the inner surface.

Abstract: An electronic component, a semiconductor package, and an electronic device including the electronic component and/or the semiconductor package are provided. The electronic component includes an electronic element; an encapsulation member that encapsulates the electronic element and has a first surface and a second surface substantially parallel to each other; and a lead electrically connected to the electronic element and extending outward from the encapsulation member. The lead is disposed entirely in a region between a plane of the first surface of the encapsulation member and a plane of the second surface of the encapsulation member.

Abstract: A semiconductor memory device is included. The semiconductor device includes a semiconductor memory device, comprising: a first substrate including a first semiconductor device mounted on the first substrate and a first connection terminal disposed at an edge of the first substrate; a second substrate including a second semiconductor device mounted on the second substrate and a second connection terminal at an edge of the second substrate; and an interface connector including a first socket portion configured to receive the first connection terminal and a second socket portion configured to receive the second connection terminal. The interface connector further includes: first socket terminals of the first socket portion are connected with the first connection terminals; second socket terminals of the second socket portion are connected with the second connection terminals; and an internal wiring for electrically connecting the first socket terminals with the second socket terminals.

Abstract: An electronic component, a semiconductor package, and an electronic device including the electronic component and/or the semiconductor package are provided. The electronic component includes an electronic element; an encapsulation member that encapsulates the electronic element and has a first surface and a second surface substantially parallel to each other; and a lead electrically connected to the electronic element and extending outward from the encapsulation member. The lead is disposed entirely in a region between a plane of the first surface of the encapsulation member and a plane of the second surface of the encapsulation member.

Abstract: A semiconductor memory device is included. The semiconductor device includes a semiconductor memory device, comprising: a first substrate including a first semiconductor device mounted on the first substrate and a first connection terminal disposed at an edge of the first substrate; a second substrate including a second semiconductor device mounted on the second substrate and a second connection terminal at an edge of the second substrate; and an interface connector including a first socket portion configured to receive the first connection terminal and a second socket portion configured to receive the second connection terminal. The interface connector further includes: first socket terminals of the first socket portion are connected with the first connection terminals; second socket terminals of the second socket portion are connected with the second connection terminals; and an internal wiring for electrically connecting the first socket terminals with the second socket terminals.